MRF6VP3450HSR5

Mfr. #:: MRF6VP3450HSR5
제조사:: NXP / Freescale
설명:: RF MOSFET Transistors VHV6 450W 860MHZ NI1230S
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: MRF6VP3450HSR5 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF MOSFET 트랜지스터

RoHS:: Y

트랜지스터 극성:: N-채널

기술:: 시

Vds - 드레인 소스 항복 전압:: 110 V

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

장착 스타일:: SMD/SMT

패키지/케이스:: NI-1230S

포장:: 릴

구성:: 이중 공통 소스

키:: 5.08 mm

길이:: 32.38 mm

시리즈:: MRF6VP3450H

유형:: RF 전력 MOSFET

너비:: 10.29 mm

상표:: NXP / 프리스케일

채널 모드:: 상승

상품 유형:: RF MOSFET 트랜지스터

공장 팩 수량:: 50

하위 카테고리:: MOSFET

Vgs - 게이트 소스 전압:: - 6 V, 10 V

부품 번호 별칭:: 935314024178

단위 무게:: 0.300472 oz

Tags: MRF6VP34, MRF6VP3, MRF6VP, MRF6V, MRF6, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF6VP3450HSR5 평가 및 리뷰

N***n

Very long delivery, but it is possible to blame pr. Quality at the level, the price is adequate. Checked-work. Purchase satisfied.

2019-01-16

A***v

Thank you very much to the seller for the quality goods. Recommend seller

2019-06-26

E**m

After 3 months i get it today.

2019-05-27

MRF6VP3450HSR5 설명

***escale Semiconductor: Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V

***W: RF Power Transistor,470 to 860 MHz, 450 W, Typ Gain in dB is 22.5 @ 860 MHz, 50 V, LDMOS, SOT1829

*** Electronic Components: RF MOSFET Transistors VHV6 450W 860MHZ NI1230S

***el Electronic: IC REG MULTI CONFG ADJ 1.5A 8QFN

***or: RF ULTRA HIGH FREQUENCY BAND, N-

*** Electronics: FET RF 2CH 110V 860MHZ NI1230S

***W: RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***nell: TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***escale Semiconductor: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V

***W: RF Power Transistor,10 to 600 MHz, 300 W, Typ Gain in dB is 25.5 @ 220 MHz, 50 V, LDMOS, SOT1735

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:TO-272 ;RoHS Compliant: Yes

***nell: RF, MOSFET, N, 600MHZ, 300W, 4TO272; Drain Source Voltage Vds: 100V; Continuous Drain Current Id: 150mA; Power Dissipation Pd: 300W; Operating Frequency Min: 10MHz; Operating Frequency Max: 600MHz; RF Transistor Case: TO-272;

***escale Semiconductor: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V

***et: Power LDMOS Transistor N-Channel 110V 5-Pin TO-270 WB EP T/R

***ical: Trans RF MOSFET N-CH 110V 5-Pin TO-270 W T/R

***or: RF ULTRA HIGH FREQUENCY BAND, N-

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:4-TO-270 ;RoHS Compliant: Yes

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***SIT Distribution GmbH: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***nsix Microsemi: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No

Market price

부분 #	제조	설명	재고	가격
MRF6VP3450HSR5 DISTI # V36:1790_07204079	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin NI-1230S T/R	0
MRF6VP3450HSR5 DISTI # MRF6VP3450HSR5-ND	NXP Semiconductors	FET RF 2CH 110V 860MHZ NI1230S RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	Limited Supply - Call	50:$178.5316
MRF6VP3450HSR5 DISTI # MRF6VP3450HSR5	Avnet, Inc.	Trans MOSFET N-CH 110V 5-Pin NI-1230S T/R (Alt: MRF6VP3450HSR5) RoHS: Compliant Min Qty: 50 Container: Tape and Reel	Europe - 40
MRF6VP3450HSR5 DISTI # MRF6VP3450HSR5	Avnet, Inc.	Trans MOSFET N-CH 110V 5-Pin NI-1230S T/R - Tape and Reel (Alt: MRF6VP3450HSR5) RoHS: Compliant Min Qty: 50 Container: Reel	Americas - 0	500:$162.1900 300:$165.2900 200:$171.5900 100:$178.5900 50:$185.7900
MRF6VP3450HSR5 DISTI # MRF6VP3450HSR5	Avnet, Inc.	Trans MOSFET N-CH 110V 5-Pin NI-1230S T/R - Bulk (Alt: MRF6VP3450HSR5) RoHS: Compliant Min Qty: 2 Container: Bulk	Americas - 0	20:$162.1900 10:$165.2900 6:$171.5900 4:$178.4900 2:$185.7900
MRF6VP3450HSR5 DISTI # 841-MRF6VP3450HSR5	NXP Semiconductors	RF MOSFET Transistors VHV6 450W 860MHZ NI1230S RoHS: Compliant	0	1:$186.5200 5:$182.3600 10:$178.6300 25:$175.9900 50:$169.6000
MRF6VP3450HSR5	Freescale Semiconductor	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-Oxide Semiconductor FET RoHS: Compliant	421	1000:$167.7900 500:$176.6200 100:$183.8800 25:$191.7600 1:$206.5100
MRF6VP3450HSR5 DISTI # XSKDRABS0013608	NXP Semiconductors	Telecom IC, 1-Func, PQCC40 RoHS: Compliant	40 in Stock0 on Order	40:$256.1400 2:$274.4400
MRF6VP3450HSR5 DISTI # MRF6VP3450HSR5	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	50:$168.9200

관련 상품

영상	부분 #	설명
	Mfr.#: MRF6VP3450HR5 OMO.#: OMO-MRF6VP3450HR5	RF MOSFET Transistors VHV6 450W 860MHZ NI1230H
	Mfr.#: MRF6VP3091NBR5 OMO.#: OMO-MRF6VP3091NBR5	RF MOSFET Transistors VHV6 50V 4.5W
	Mfr.#: MRF6VP3091NR1 OMO.#: OMO-MRF6VP3091NR1	RF MOSFET Transistors VHV6 50V 4.5W TO270WB4
	Mfr.#: MRF6VP3450HR6 OMO.#: OMO-MRF6VP3450HR6	RF MOSFET Transistors VHV6 450W 860MHZ NI1230H
	Mfr.#: MRF6VP3450H OMO.#: OMO-MRF6VP3450H-1190	신규 및 오리지널
	Mfr.#: MRF6VP3450HR6/FRESSCALE OMO.#: OMO-MRF6VP3450HR6-FRESSCALE-1190	신규 및 오리지널
	Mfr.#: MRF6VP3450HSR5 OMO.#: OMO-MRF6VP3450HSR5-NXP-SEMICONDUCTORS	FET RF 2CH 110V 860MHZ NI1230S
	Mfr.#: MRF6VP3091NBR1 OMO.#: OMO-MRF6VP3091NBR1-NXP-SEMICONDUCTORS	RF MOSFET Transistors VHV6 50V 4.5W TO272WB4
	Mfr.#: MRF6VP3091NBR5 OMO.#: OMO-MRF6VP3091NBR5-NXP-SEMICONDUCTORS	RF MOSFET Transistors VHV6 50V 4.5W
	Mfr.#: MRF6VP3091NR5 OMO.#: OMO-MRF6VP3091NR5-NXP-SEMICONDUCTORS	RF MOSFET Transistors VHV6 50V 4.5W

유효성

재고:: Available
주문 시:: 4500
수량 입력:

MRF6VP3450HSR5의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$186.52~~; ~~US$186.52~~

5: ~~US$182.36~~; ~~US$911.80~~

10: ~~US$178.63~~; ~~US$1 786.30~~

25: ~~US$175.99~~; ~~US$4 399.75~~

시작

MRF6VP34 6
MRF6VP3 10
MRF6VP 38
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MRF6 332
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