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S25FL512SAGBHIA10

S25FL512SAGBHIA10
Mfr. #:
S25FL512SAGBHIA10
제조사:
Cypress Semiconductor
설명:
NOR Flash Nor
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
S25FL512SAGBHIA10 데이터 시트
배달:
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추가 정보:
S25FL512SAGBHIA10 추가 정보 S25FL512SAGBHIA10 Product Details
제품 속성
속성 값
제조사:
사이프러스 반도체
제품 카테고리:
NOR 플래시
RoHS:
Y
장착 스타일:
SMD/SMT
패키지/케이스:
BGA-24
시리즈:
S25FL512S
메모리 크기:
512 Mbit
최대 클록 주파수:
133 MHz
인터페이스 유형:
SPI
조직:
64 M x 8
타이밍 유형:
비동기
데이터 버스 폭:
8 bit
공급 전압 - 최소:
2.7 V
공급 전압 - 최대:
3.6 V
공급 전류 - 최대:
100 mA
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 85 C
포장:
쟁반
메모리 유형:
도 아니다
속도:
133 MHz
건축학:
미러비트 이클립스
상표:
사이프러스 반도체
습기에 민감한:
네
상품 유형:
NOR 플래시
기준:
공통 플래시 인터페이스(CFI)
공장 팩 수량:
338
하위 카테고리:
메모리 및 데이터 저장
상표명:
미러비트
Tags
S25FL512SAGBHIA, S25FL512SAGBHI, S25FL512SAGBH, S25FL512SAGB, S25FL512SAG, S25FL512SA, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***
NOR Flash Serial-SPI 3V 512Mbit 512M x 1bit 8ns 24-Pin FBGA Tray
***ress Semiconductor SCT
Serial NOR Flash Memory, 512 Mbit Density, FBGA-24, RoHS
***ark
Flash Memory, 512Mbit, 133Mhz, Fbga-24; Flash Memory Type:serial Nor; Memory Size:512Mbit; Flash Memory Configuration:64M X 8Bit; Ic Interface Type:spi; Memory Case Style:fbga; No. Of Pins:24Pins; Clock Frequency:133Mhz Rohs Compliant: Yes
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
부분 # 제조 설명 재고 가격
S25FL512SAGBHIA10
DISTI # 31589548		Cypress SemiconductorNOR Flash Serial 3V/3.3V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 8ns 24-Pin BGA Tray
RoHS: Compliant		338
  • 2:$8.1100
S25FL512SAGBHIA10
DISTI # 428-3842-ND		Cypress SemiconductorIC FLASH 512M SPI 133MHZ 24BGA
RoHS: Compliant
Min Qty: 1
Container: Tray		296In Stock
  • 1014:$5.8117
  • 676:$6.0227
  • 338:$6.3327
  • 100:$6.5307
  • 50:$7.2798
  • 25:$7.3056
  • 10:$7.4610
  • 1:$8.1100
S25FL512SAGBHIA10
DISTI # V99:2348_06272043		Cypress SemiconductorNOR Flash Serial 3V/3.3V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 8ns 24-Pin BGA Tray
RoHS: Compliant		338
  • 1:$8.1100
S25FL512SAGBHIA10
DISTI # 51Y1250		Cypress SemiconductorTRAY PKGED / 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, BGA-FAB024 IN TRAY PACKING, RESET# + VIO0
  • 1:$9.2300
  • 10:$8.2900
  • 25:$7.5500
  • 50:$7.0600
  • 100:$6.5600
  • 250:$5.5000
  • 500:$5.3300
S25FL512SAGBHIA10
DISTI # 727-S25FL512SAGBHIA1		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		0
  • 1:$7.7200
  • 10:$7.1100
  • 25:$6.9600
  • 50:$6.9300
  • 100:$6.2200
  • 250:$6.0300
S25FL512SAGBHIA10
DISTI # 2772760		Cypress SemiconductorFLASH MEMORY, 512MBIT, 133MHZ, FBGA-24
RoHS: Compliant		0
  • 1:£6.2600
  • 10:£5.2800
  • 25:£5.1700
  • 50:£5.1500
  • 100:£4.6200
S25FL512SAGBHIA10
DISTI # C1S159300575148		Cypress SemiconductorFlash
RoHS: Not Compliant		338
  • 200:$5.4000
  • 100:$5.4400
  • 50:$5.9200
  • 10:$6.9300
  • 1:$11.8000
S25FL512SAGBHIA10
DISTI # 2772760		Cypress SemiconductorFLASH MEMORY, 512MBIT, 133MHZ, FBGA-24
RoHS: Compliant		0
  • 1:$13.4100
  • 10:$12.5300
  • 25:$11.0900
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Mfr.#: GRM21BR61E226ME44L

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 Crystals 25MHz 50ppm 18pF -20C +70C
유효성
재고:
Available
주문 시:
1984
수량 입력:
S25FL512SAGBHIA10의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$9.84
US$9.84
10
US$9.02
US$90.20
25
US$8.20
US$205.00
50
US$7.81
US$390.50
100
US$7.38
US$738.00
250
US$6.82
US$1 705.00
500
US$5.94
US$2 970.00
1000
US$5.54
US$5 540.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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