MR0A08BMA35R

MR0A08BMA35R
Mfr. #:
MR0A08BMA35R
제조사:
Everspin Technologies
설명:
IC RAM 1M PARALLEL 48FBGA
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
MR0A08BMA35R 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
MR0A08BMA35R 추가 정보
제품 속성
속성 값
제조사
에버스핀테크놀로지스
제품 카테고리
메모리
시리즈
MR0A08B
포장
테이프 및 릴(TR) 대체 포장
장착 스타일
SMD/SMT
패키지 케이스
BGA-48
작동 온도
0°C ~ 70°C (TA)
상호 작용
평행 한
전압 공급
3 V ~ 3.6 V
공급자-장치-패키지
48-FBGA (8x8)
메모리 크기
1M (128K x 8)
메모리형
MRAM(자기 저항 RAM)
속도
35ns
액세스 시간
35 ns
포맷 메모리
최대 작동 온도
+ 125 C
최소 작동 온도
- 40 C
운영-공급-전류
55 mA
인터페이스 유형
평행 한
조직
128 k x 8
데이터 버스 너비
8 bit
공급 전압 최대
3.6 V
공급 전압 최소
3 V
Tags
MR0A08BM, MR0A0, MR0A, MR0
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    V***y
    V***y
    RU

    Good goods. Delivery 3 months!!!

    2019-04-15
    G***s
    G***s
    LV

    very well!super!

    2019-05-07
    T***v
    T***v
    US

    ok

    2019-09-03
***i-Key
IC RAM 1M PARALLEL 48FBGA
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
MR0A08B / MR0D08B / MR0A16A 1Mb Parallel MRAM
Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance. 
부분 # 제조 설명 재고 가격
MR0A08BMA35R
DISTI # MR0A08BMA35R-ND
Everspin TechnologiesIC RAM 1M PARALLEL 48FBGA
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$8.2460
MR0A08BMA35
DISTI # 936-MR0A08BMA35
Everspin TechnologiesNVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
RoHS: Compliant
693
  • 1:$10.8600
  • 10:$10.0600
  • 25:$9.8300
  • 50:$9.7800
  • 100:$8.6100
  • 250:$8.1800
  • 500:$8.1000
  • 1000:$7.9800
MR0A08BMA35R
DISTI # 936-MR0A08BMA35R
Everspin TechnologiesNVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
RoHS: Compliant
0
  • 1:$11.2200
  • 10:$10.4000
  • 25:$10.1600
  • 50:$10.1100
  • 100:$8.9000
  • 250:$8.4600
  • 500:$8.3700
  • 1000:$8.2500
  • 2000:$7.8700
영상 부분 # 설명
MR0A08BCMA35

Mfr.#: MR0A08BCMA35

OMO.#: OMO-MR0A08BCMA35

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BMA35R

Mfr.#: MR0A08BMA35R

OMO.#: OMO-MR0A08BMA35R

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BYS35R

Mfr.#: MR0A08BYS35R

OMO.#: OMO-MR0A08BYS35R

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BCMA35R

Mfr.#: MR0A08BCMA35R

OMO.#: OMO-MR0A08BCMA35R

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BSO35

Mfr.#: MR0A08BSO35

OMO.#: OMO-MR0A08BSO35

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BYS35R

Mfr.#: MR0A08BYS35R

OMO.#: OMO-MR0A08BYS35R-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BCSO35

Mfr.#: MR0A08BCSO35

OMO.#: OMO-MR0A08BCSO35-EVERSPIN-TECHNOLOGIES

NVRAM 3.3V 1Mb (128Kx8) MRAM
MR0A08BCMA35

Mfr.#: MR0A08BCMA35

OMO.#: OMO-MR0A08BCMA35-EVERSPIN-TECHNOLOGIES

IC RAM 1M PARALLEL 48FBGA
MR0A08BYS35

Mfr.#: MR0A08BYS35

OMO.#: OMO-MR0A08BYS35-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BMYS35

Mfr.#: MR0A08BMYS35

OMO.#: OMO-MR0A08BMYS35-1190

신규 및 오리지널
유효성
재고:
Available
주문 시:
1500
수량 입력:
MR0A08BMA35R의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$11.18
US$11.18
10
US$10.62
US$106.16
100
US$10.06
US$1 005.75
500
US$9.50
US$4 749.40
1000
US$8.94
US$8 940.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
시작
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