GA20JT12-263

GA20JT12-263
Mfr. #:
GA20JT12-263
제조사:
GeneSiC Semiconductor
설명:
MOSFET 1200V 45A Standard
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
GA20JT12-263 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
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ECAD Model:
추가 정보:
GA20JT12-263 추가 정보
제품 속성
속성 값
제조사:
GeneSiC 반도체
제품 카테고리:
MOSFET
RoHS:
Y
기술:
SiC
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-7
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
1.2 kV
Id - 연속 드레인 전류:
45 A
Rds On - 드레인 소스 저항:
50 mOhms
Vgs - 게이트 소스 전압:
3.44 V
Qg - 게이트 차지:
104 nC
Pd - 전력 손실:
282 W
채널 모드:
상승
포장:
시리즈:
GA20JT12
상표:
GeneSiC 반도체
가을 시간:
15 ns
상품 유형:
MOSFET
상승 시간:
12 ns
공장 팩 수량:
50
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
25 ns
일반적인 켜기 지연 시간:
15 ns
단위 무게:
0.056438 oz
Tags
GA20, GA2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
SIC JUNCTION TRANS, 1.2KV, 20A, TO-263
***i-Key
TRANS SJT 1200V 45A
GA20JT12 SiC Carbide Junction Transistors
GeneSiC GA20JT12 SiC Carbide Junction Transistors (SJT) are "Super-High" current gain SiC BJTs developed in 1200V to 10kV ratings. These SJTs are normally-off, compatible with standard MOSFET/IGBT drivers, and have the best temperature-independent switching and blocking performance. The GA20JT12 transistors operate at 175ºC (maximum), provide excellent gain linearity and low output capacitance. Features include gate oxide free SiC switch, optional gate return pin, and suitability for connecting an anti-parallel diode. The GA20JT12 advantages are >20µs short-circuit withstand capability and high amplifier bandwidth. Applications include down-hole oil drilling, motor drives, solar inverters, and induction heating.Learn more
부분 # 제조 설명 재고 가격
GA20JT12-263
DISTI # 1242-1189-ND
GeneSic Semiconductor IncTRANS SJT 1200V 45A
RoHS: Compliant
Min Qty: 1
Container: Tube
252In Stock
  • 100:$31.8388
  • 50:$34.2570
  • 10:$37.2800
  • 1:$40.3000
GA20JT12-263
DISTI # 905-GA20JT12-263
GeneSic Semiconductor IncMOSFET 1200V 45A Standard
RoHS: Compliant
26
  • 1:$35.9200
  • 5:$34.1500
  • 10:$33.2300
  • 25:$32.3100
  • 50:$30.5400
  • 100:$28.3800
  • 250:$26.0500
영상 부분 # 설명
NTHL080N120SC1

Mfr.#: NTHL080N120SC1

OMO.#: OMO-NTHL080N120SC1

MOSFET SIC MOS 80MW 1200V
SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120

MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
SCS220AJHRTLL

Mfr.#: SCS220AJHRTLL

OMO.#: OMO-SCS220AJHRTLL

Schottky Diodes & Rectifiers 650V 20A SiC SBD AEC-Q101 Qualified
SCS215AJHRTLL

Mfr.#: SCS215AJHRTLL

OMO.#: OMO-SCS215AJHRTLL

Schottky Diodes & Rectifiers 650V 15A SiC SBD AEC-Q101 Qualified
IDDD10G65C6XTMA1

Mfr.#: IDDD10G65C6XTMA1

OMO.#: OMO-IDDD10G65C6XTMA1

Schottky Diodes & Rectifiers SIC DIODES
IDDD04G65C6XTMA1

Mfr.#: IDDD04G65C6XTMA1

OMO.#: OMO-IDDD04G65C6XTMA1

Schottky Diodes & Rectifiers SIC DIODES
V8PM10SHM3/H

Mfr.#: V8PM10SHM3/H

OMO.#: OMO-V8PM10SHM3-H

Schottky Diodes & Rectifiers 100V 8A TMBS AEC-Q101 Qualified
GA10SICP12-263

Mfr.#: GA10SICP12-263

OMO.#: OMO-GA10SICP12-263

MOSFET 1200V 25A Std SIC CoPak
SCT3080KLGC11

Mfr.#: SCT3080KLGC11

OMO.#: OMO-SCT3080KLGC11

MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS
SCT3080KLGC11

Mfr.#: SCT3080KLGC11

OMO.#: OMO-SCT3080KLGC11-ROHM-SEMI

MOSFET NCH 1.2KV 31A TO247N
유효성
재고:
25
주문 시:
2008
수량 입력:
GA20JT12-263의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$39.51
US$39.51
5
US$37.55
US$187.75
10
US$36.55
US$365.50
25
US$35.53
US$888.25
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