GA10SICP12-263

GA10SICP12-263
Mfr. #:
GA10SICP12-263
제조사:
GeneSiC Semiconductor
설명:
TRANS SJT 1200V 25A TO263-7
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
GA10SICP12-263 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
GA10SICP12-263 추가 정보
제품 속성
속성 값
제조사
GeneSiC 반도체
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
단위 무게
0.056438 oz
장착 스타일
SMD/SMT
패키지 케이스
TO-263-7
기술
SiC
채널 수
1 Channel
구성
하나의
Pd 전력 손실
170 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
Vgs 게이트 소스 전압
30 V
Id-연속-드레인-전류
25 A
Vds-드레인-소스-고장-전압
1.2 kV
Rds-On-Drain-Source-Resistance
100 mOhms
트랜지스터 극성
N-채널
Qg-Gate-Charge
55 nC
채널 모드
상승
Tags
GA10S, GA10, GA1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***eSiC Semiconductor
SiC Junction Transistor 1200V 100mΩ TO-263-7
***i-Key
TRANS SJT 1200V 25A D2PAK
***ark
T &R / Sic C P
Silicon Carbide Junction Transistors/Schottky Diode Co-Packs
GeneSiC Silicon Carbide Junction Transistors/Schottky Diode Co-Packs are a hybrid silicon IGBT with a silicon carbide (SiC) rectifier in a module. GeneSiC uses the latest generation of low-loss IGBTs and pairs them with their silicon carbide diodes. Replacing the traditional silicon freewheeling diode (FWD) with silicon carbide schottky rectifiers offers revolutionary switching performance. These improvements will usher in a new era in power conversion applications. These devices are offered in TO-263-7L or SOT-227 packages.Learn More
부분 # 제조 설명 재고 가격
GA10SICP12-263
DISTI # 1242-1318-ND
GeneSic Semiconductor IncTRANS SJT 1200V 25A TO263-7
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$28.8945
GA10SICP12-263
DISTI # 905-GA10SICP12-263
GeneSic Semiconductor IncMOSFET 1200V 25A Std SIC CoPak
RoHS: Compliant
58
  • 1:$39.1000
  • 5:$37.1700
  • 10:$36.1800
  • 25:$35.1700
  • 50:$33.2400
  • 100:$30.8900
  • 250:$28.3500
영상 부분 # 설명
GA10SICP12-263

Mfr.#: GA10SICP12-263

OMO.#: OMO-GA10SICP12-263

MOSFET 1200V 25A Std SIC CoPak
GA10SICP12-247

Mfr.#: GA10SICP12-247

OMO.#: OMO-GA10SICP12-247

MOSFET 1200V 25A SIC CoPak
GA10SICP12-263

Mfr.#: GA10SICP12-263

OMO.#: OMO-GA10SICP12-263-GENESIC-SEMICONDUCTOR

TRANS SJT 1200V 25A TO263-7
유효성
재고:
Available
주문 시:
5500
수량 입력:
GA10SICP12-263의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$42.52
US$42.52
10
US$40.40
US$403.99
100
US$38.27
US$3 827.25
500
US$36.15
US$18 073.15
1000
US$34.02
US$34 020.00
시작
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