We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| HGTG10N120BND DISTI # HGTG10N120BND-ND | ON Semiconductor | IGBT 1200V 35A 298W TO247 Min Qty: 1 Container: Tube | 781In Stock |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 Container: Tube | Americas - 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 | Asia - 0 |
|
| HGTG10N120BND DISTI # 98B1928 | ON Semiconductor | SINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| HGTG10N120BND. DISTI # 16AC0004 | Fairchild Semiconductor Corporation | DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| HGTG10N120BND DISTI # 512-HGTG10N120BND | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Compliant | 546 |
|
| G10N120BN | Harris Semiconductor | 20 | ||
| HGTG10N120BND | Harris Semiconductor | 20 | ||
| HGTG10N120BND | Harris Semiconductor | 23 | ||
| HGTG10N120BN | Harris Semiconductor | 45 | ||
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Transistor: IGBT,1.2kV,17A,298W,TO247-3 | 133 |
|
| HGTG10N120BND | Fairchild Semiconductor Corporation | RoHS: Compliant | Europe - 1130 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: G10N10 OMO.#: OMO-G10N10-1190 |
신규 및 오리지널 |
|
|
Mfr.#: G10N10A OMO.#: OMO-G10N10A-1190 |
신규 및 오리지널 |
|
|
Mfr.#: G10N120 OMO.#: OMO-G10N120-1190 |
신규 및 오리지널 |
|
|
Mfr.#: G10N120BN OMO.#: OMO-G10N120BN-1190 |
Transistor: IGBT, 1.2kV, 17A, 298W, TO247-3 |
|
|
Mfr.#: G10N120BND OMO.#: OMO-G10N120BND-1190 |
신규 및 오리지널 |
|
|
Mfr.#: G10N120CN OMO.#: OMO-G10N120CN-1190 |
신규 및 오리지널 |
|
|
Mfr.#: G10N120CND OMO.#: OMO-G10N120CND-1190 |
신규 및 오리지널 |
|
|
Mfr.#: G10N120RUF OMO.#: OMO-G10N120RUF-1190 |
신규 및 오리지널 |
|
|
Mfr.#: G10N120RUFD OMO.#: OMO-G10N120RUFD-1190 |
신규 및 오리지널 |