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IXFN240N15T2

IXFN240N15T2
Mfr. #:
IXFN240N15T2
제조사:
Littelfuse
설명:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFN240N15T2 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN240N15T2 DatasheetIXFN240N15T2 Datasheet (P4-P6)
ECAD Model:
추가 정보:
IXFN240N15T2 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
섀시 마운트
패키지/케이스:
SOT-227-4
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
150 V
Id - 연속 드레인 전류:
240 A
Rds On - 드레인 소스 저항:
5.2 mOhms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
460 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
830 W
채널 모드:
상승
상표명:
HiPerFET
포장:
튜브
시리즈:
IXFN240N15
유형:
GigaMOS Trench T2 HiperFet
상표:
익시스
순방향 트랜스컨덕턴스 - 최소:
125 S
가을 시간:
145 ns
상품 유형:
MOSFET
상승 시간:
125 ns
공장 팩 수량:
10
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
77 ns
일반적인 켜기 지연 시간:
48 ns
단위 무게:
1.058219 oz
Tags
IXFN24, IXFN2, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 150 V 240 A 5.2 mO Surface Mount Power Mosfet - SOT 227
***i-Key
MOSFET N-CH 150V 240A SOT227B
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
부분 # 제조 설명 재고 가격
IXFN240N15T2
DISTI # IXFN240N15T2-ND		IXYS CorporationMOSFET N-CH 150V 240A SOT227
RoHS: Compliant
Min Qty: 10
Container: Tube		Temporarily Out of Stock
  • 10:$27.7500
IXFN240N15T2
DISTI # 747-IXFN240N15T2		IXYS CorporationMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		0
  • 200:$21.7500
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Mfr.#: IXFN240N25X3

OMO.#: OMO-IXFN240N25X3-IXYS-CORPORATION

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IXFN240N15T2

Mfr.#: IXFN240N15T2

OMO.#: OMO-IXFN240N15T2-IXYS-CORPORATION

 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
유효성
재고:
Available
주문 시:
3000
수량 입력:
IXFN240N15T2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
10
US$27.75
US$277.50
30
US$25.50
US$765.00
50
US$24.42
US$1 221.00
100
US$23.70
US$2 370.00
200
US$21.75
US$4 350.00
500
US$20.70
US$10 350.00
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