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VN3205N3-G-P002

VN3205N3-G-P002
Mfr. #:
VN3205N3-G-P002
제조사:
Microchip Technology
설명:
MOSFET N-CH Enhancmnt Mode MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
VN3205N3-G-P002 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
VN3205N3-G-P002 추가 정보 VN3205N3-G-P002 Product Details
제품 속성
속성 값
제조사:
마이크로칩
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-92-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
50 V
Id - 연속 드레인 전류:
1.2 A
Rds On - 드레인 소스 저항:
450 mOhms
Vgs - 게이트 소스 전압:
20 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
1 W
구성:
하나의
채널 모드:
상승
포장:
릴
키:
5.33 mm
길이:
5.21 mm
제품:
MOSFET 소신호
트랜지스터 유형:
1 N-Channel
너비:
4.19 mm
상표:
마이크로칩 기술
가을 시간:
25 ns
상품 유형:
MOSFET
상승 시간:
15 ns
공장 팩 수량:
2000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
25 ns
일반적인 켜기 지연 시간:
10 ns
단위 무게:
0.016000 oz
Tags
VN3205N3-G, VN3205N3, VN3205N, VN3205, VN320, VN32, VN3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V, 0.3 OHM 3 TO-92 RVT/R ROHS COMPLIANT: YES
***et
Trans MOSFET N-CH 50V 1.2A 3-Pin TO-92 T/R
*** Stop Electro
Small Signal Field-Effect Transistor, 1.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***ure Electronics
N-Channel 60 V 0.33 Ohm Enhancement Mode Vertical DMOS FET-TO-92
***ponent Sense
Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line
***ark
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET N-Channel 60V 1.1A E-Line
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ment14 APAC
MOSFET, N, LOGIC, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:850mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.1A; Current Temperature:25°C; Device Marking:ZVN4306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:850mW; Power Dissipation Pd:850mW; Power Dissipation Ptot Max:850mW; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
N-Channel 60 V 0.33 Ohm Through Hole Enhancement Mode DMOS FET - TO-92
***ical
Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; On Resistance Rds(On):0.33Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:3Pinsrohs Compliant: No
***(Formerly Allied Electronics)
MOSFET P-ch 50V 0.175A 10R 0.625W E-Line
***ark
P CHANNEL MOSFET, -50V, 175mA TO-92; Transistor Polarity:P Channel; Continuous Drain Current, Id:170mA; Drain Source Voltage, Vds:-50V; On Resistance, Rds(on):10ohm; Rds(on) Test Voltage, Vgs:-5V; Threshold Voltage, Vgs Typ:-2V ;RoHS Compliant: Yes
***nell
MOSFET, P E-LINE; Transistor Polarity: P Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 625mW; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 1.27mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 625mW; Pulse Current Idm: 500mA
***p One Stop Global
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R
***el Electronic
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***et Europe
Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***r Electronics
Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***p One Stop Global
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***el Electronic
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
부분 # 제조 설명 재고 가격
VN3205N3-G-P002
DISTI # VN3205N3-G-P002-ND		Microchip Technology IncMOSFET N-CH 50V 1.2A TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$1.0300
VN3205N3-G-P002
DISTI # VN3205N3-G-P002		Microchip Technology IncTrans MOSFET N-CH 50V 1.2A 3-Pin TO-92 T/R - Tape and Reel (Alt: VN3205N3-G-P002)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 2000:$0.7099
  • 4000:$0.6859
  • 8000:$0.6639
  • 12000:$0.6439
  • 20000:$0.6339
VN3205N3-G-P002
DISTI # 53Y4339		Microchip Technology IncMOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V, 0.3 Ohm3 TO-92 RVT/R0
  • 1:$1.3600
  • 25:$1.1300
  • 100:$1.0300
VN3205N3-G-P002
DISTI # 70483897		Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,50V,0.3 Ohm3 TO-92RVT/R
RoHS: Compliant		0
  • 2000:$0.9800
VN3205N3-G-P002
DISTI # VN3205N3-G-P002		Microchip Technology IncMOSFETN-CHANNEL ENHANCEMENT-MODE50V0.3 Ohm
RoHS: Compliant		10000
  • 1000:$0.8300
  • 100:$1.0000
  • 26:$1.1000
  • 1:$1.3200
VN3205N3-G-P002
DISTI # 689-VN3205N3-G-P002		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
RoHS: Compliant		676
  • 1:$1.3600
  • 10:$1.3400
  • 25:$1.1400
  • 100:$1.0300
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 신규 및 오리지널
유효성
재고:
546
주문 시:
2529
수량 입력:
VN3205N3-G-P002의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.35
US$1.35
10
US$1.33
US$13.30
25
US$1.13
US$28.25
100
US$1.03
US$103.00
250
US$0.90
US$226.25
500
US$0.77
US$386.00
1000
US$0.70
US$703.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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