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PMZB370UNE,315

PMZB370UNE,315
Mfr. #:
PMZB370UNE,315
제조사:
Nexperia
설명:
MOSFET N-Chan 30V 900mA
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
PMZB370UNE,315 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
넥스페리아
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
DFN-1006B-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
30 V
Id - 연속 드레인 전류:
900 mA
Rds On - 드레인 소스 저항:
490 mOhms
Vgs - 게이트 소스 전압:
8 V
Pd - 전력 손실:
715 mW
구성:
하나의
포장:
릴
트랜지스터 유형:
1 N-Channel
상표:
넥스페리아
상품 유형:
MOSFET
공장 팩 수량:
10000
하위 카테고리:
MOSFET
Tags
PMZB37, PMZB3, PMZB, PMZ
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PMZB370UNE - 30 V, single N-channel Trench MOSFET
***ure Electronics
Single N-Channel 30 V 360 mW 1.16 nC Silicon Surface Mount Mosfet - SOT-883
***ical
Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R
***i-Key
MOSFET N-CH 30V 900MA DFN1006B-3
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:900Ma; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.37Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:770Mv; Power Dissipation Pd:360Mw; No. Of Pins:3Pins Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 0.9A, SOT-883B-3; Transistor Polarity:N Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:770mV; Power Dissipation Pd:360mW; Transistor Case Style:SOT-883B; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, N-CH, 30V, 0.9A, SOT-883B-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:900mA; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.37ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:770mV; Dissipazione di Potenza Pd:360mW; Modello Case Transistor:SOT-883B; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
부분 # 제조 설명 재고 가격
PMZB370UNE,315
DISTI # 1727-1379-1-ND		NexperiaMOSFET N-CH 30V 0.9A DFN1006B-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6382In Stock
  • 1000:$0.1642
  • 500:$0.2129
  • 100:$0.3020
  • 10:$0.4310
  • 1:$0.5500
PMZB370UNE,315
DISTI # 1727-1379-6-ND		NexperiaMOSFET N-CH 30V 0.9A DFN1006B-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6382In Stock
  • 1000:$0.1642
  • 500:$0.2129
  • 100:$0.3020
  • 10:$0.4310
  • 1:$0.5500
PMZB370UNE,315
DISTI # 1727-1379-2-ND		NexperiaMOSFET N-CH 30V 0.9A DFN1006B-3
RoHS: Compliant
Min Qty: 10000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.1319
PMZB370UNE,315
DISTI # PMZB370UNE,315		NexperiaTrans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R - Tape and Reel (Alt: PMZB370UNE,315)
RoHS: Compliant
Min Qty: 10000
Container: Reel		Americas - 280000
  • 10000:$0.0969
  • 20000:$0.0949
  • 40000:$0.0919
  • 60000:$0.0899
  • 100000:$0.0879
PMZB370UNE,315
DISTI # PMZB370UNE315		NexperiaTrans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R - Bulk (Alt: PMZB370UNE315)
RoHS: Compliant
Min Qty: 6250
Container: Bulk		Americas - 0
  • 6250:$0.1049
  • 6252:$0.1029
  • 12502:$0.1009
  • 31250:$0.0979
  • 62500:$0.0959
PMZB370UNE,315
DISTI # 771-PMZB370UNE315		NexperiaMOSFET N-Chan 30V 900mA
RoHS: Compliant		0
  • 10000:$0.1040
  • 20000:$0.0960
  • 50000:$0.0920
PMZB370UNE315NXP SemiconductorsNow Nexperia PMZB370UNE - Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, XQFN3
RoHS: Not Compliant		31500
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
PMZB370UNE315NexperiaNow Nexperia PMZB370UNE - Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, XQFN3
RoHS: Not Compliant		660000
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
PMZB370UNE,315
DISTI # 2498602		NexperiaMOSFET, N-CH, 30V, 0.9A, SOT-883B-3
RoHS: Compliant		0
  • 500:£0.1480
  • 250:£0.1820
  • 100:£0.2160
  • 25:£0.3370
  • 5:£0.3560
영상 부분 # 설명
PMZB370UNE,315

Mfr.#: PMZB370UNE,315

OMO.#: OMO-PMZB370UNE-315

 MOSFET N-Chan 30V 900mA
PMZB370UNE315

Mfr.#: PMZB370UNE315

OMO.#: OMO-PMZB370UNE315-1190

 Now Nexperia PMZB370UNE - Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, XQFN3
PMZB370UNE

Mfr.#: PMZB370UNE

OMO.#: OMO-PMZB370UNE-1190

 SMALL SIGNAL FIELD-EFFECT TRANSISTOR
PMZB370UNE,315

Mfr.#: PMZB370UNE,315

OMO.#: OMO-PMZB370UNE-315-NEXPERIA

 MOSFET N-CH 30V 0.9A DFN1006B-3
유효성
재고:
Available
주문 시:
4500
수량 입력:
PMZB370UNE,315의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.42
US$0.42
10
US$0.32
US$3.17
100
US$0.17
US$17.20
1000
US$0.13
US$129.00
2500
US$0.11
US$277.50
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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