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NDS331N

Mfr. #:
NDS331N
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET N-Ch LL FET Enhancement Mode
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
NDS331N 데이터 시트
ECAD Model:
재고:
277
주문 시:
2260
수량 입력:
NDS331N의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
수량
단가
내선 가격
1
US$0.35
US$0.35
10
US$0.27
US$2.68
100
US$0.14
US$14.50
1000
US$0.11
US$109.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
SSOT-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
20 V
Id - 연속 드레인 전류:
1.3 A
Rds On - 드레인 소스 저항:
210 mOhms
Vgs - 게이트 소스 전압:
8 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
500 mW (1/2 W)
구성:
하나의
채널 모드:
상승
포장:
키:
1.12 mm
길이:
2.9 mm
제품:
MOSFET 소신호
시리즈:
NDS331N
트랜지스터 유형:
1 N-Channel
유형:
MOSFET
너비:
1.4 mm
상표:
온세미컨덕터 / 페어차일드
가을 시간:
25 ns
상품 유형:
MOSFET
상승 시간:
25 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
10 ns
일반적인 켜기 지연 시간:
5 ns
부품 번호 별칭:
NDS331N_NL
단위 무게:
0.001129 oz
Tags
NDS331N, NDS331, NDS33, NDS3, NDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    T***a
    T***a
    JP

    Item arrived safety. Thank you.

    2019-03-21
    A***v
    A***v
    KZ

    It's okay. Diode bridges came in integrity and safety.

    2019-04-09
    Z***c
    Z***c
    HR

    Nice

    2019-06-22
***eco
Transistor MOSFET N Channel 20 Volt 1.3 Amp 3-Pin Supersot Tape And Reel
***emi
N-Channel Logic Level Enhancement Mode Field Effect Transistor 20V, 1.3A, 0.21Ω
*** Source Electronics
MOSFET N-CH 20V 1.3A SSOT3 / Trans MOSFET N-CH 20V 1.3A 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET,N CH,20V,1.3A,SSOT3; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:2.7V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.3A; Power Dissipation Pd:500mW; Voltage Vgs Max:8V
***rchild Semiconductor
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
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DISTI # NDS331NTR-ND
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DISTI # NDS331N_D87Z-ND
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Limited Supply - Call
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    DISTI # 58K2016
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    • 25:$0.2950
    • 50:$0.2280
    • 100:$0.1600
    • 250:$0.1460
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    NDS331N_T
    DISTI # NDS331N-T
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    RoHS: Compliant
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      DISTI # NDS331N
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      DISTI # NDS331N-F169
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          DISTI # 512-NDS331ND87Z
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