IRG4PC40UPBF

Mfr. #:: IRG4PC40UPBF
제조사:: Infineon Technologies
설명:: IGBT Transistors 600V UltraFast 8-60kHz
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRG4PC40UPBF 데이터 시트
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지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사: 인피니언 테크놀로지스

제품 카테고리: IGBT - 싱글

시리즈: -

포장: 대부분

단위 무게: 1.340411 oz

장착 스타일: 구멍을 통해

패키지 케이스: TO-247-3

입력 유형: 기준

장착형: 구멍을 통해

공급자-장치-패키지: TO-247AC

구성: 하나의

파워맥스: 160W

역복구-시간-trr: -

전류 수집기 Ic-Max: 40A

Voltage-Collector-Emitter-Breakdown-Max: 600V

IGBT형: -

전류 수집기 펄스 Icm: 160A

Vce-on-Max-Vge-Ic: 2.1V @ 15V, 20A

스위칭 에너지: 320μJ (on), 350μJ (off)

게이트 차지: 100nC

Td-on-off-25°C: 34ns/110ns

시험조건: 480V, 20A, 10 Ohm, 15V

Pd 전력 손실: 160 W

최소 작동 온도: - 55 C

컬렉터-이미터-전압-VCEO-최대: 600 V

컬렉터-이미터-포화-전압: 2.1 V

연속 수집기 전류 at-25-C: 40 A

최대 게이트 이미 터 전압: +/- 20 V

Tags: IRG4PC40UP, IRG4PC40U, IRG4PC4, IRG4PC, IRG4P, IRG4, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG4PC40UPBF 설명

***(Formerly Allied Electronics): Transistor; IGBT; TO-247AC; 40 A (Max.); 600 V (Max.); 160 W (Max.); -55 degC

***ure Electronics: N-Channel 600 V 40 A Flange Mount Ultrafast Speed IGBT - TO-247AC

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:40A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4PC40UPbF; Fall Time Max:180ns; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop Global: Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-247AC Tube

***(Formerly Allied Electronics): Transistor; N-channel; TO-247AC; 40 A (Max.) @ 25 degC; 2.05; 160 W (Max.) @ 25

***ure Electronics: IRG4PC40 Series 600 V 20 A N-Channel Latest-Generation IGBT - TO-247AC

***ineon SCT: 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.5 V Current release time: 124 ns Power dissipation: 160 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:40A; Collector Emitter Saturation Voltage, Vce(sat):2.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***nell: IGBT, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 40A; Current Temperature: 25°C; Fall Time Max: 124ns; Fall Time tf: 124ns; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 160W; Pulsed Current Icm: 160A; Rise Time: 23ns; Transistor Polarity: N Channel; Transistor Type: IGBT

***ure Electronics: IRG4PC40FPbF Series 600 V 27 A N-Channel Fast Speed IGBT - TO-247AC

***el Electronic: Inductor RF Chip Thin Film 20nH 5% 500MHz 12Q-Factor 150mA 2.3Ohm DCR 0201 T/R

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:49A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:49A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:49A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:200A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ure Electronics: IRG4PC40KPBF 600 V 25 A Flange Mount UltraFast IGBT - TO-247AC

***ark: IGBT; Transistor Type:IGBT; Continuous Collector Current, Ic:42A; Power Dissipation, Pd:160W; Collector Emitter Voltage, V(br)ceo:600V; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Leaded Process Compatible:No RoHS Compliant: No

***ment14 APAC: IGBT, TO-247AC; Transistor Type:IGBT; DC Collector Current:42A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:42A; Current Ic Continuous a Max:42A; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:84A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***icroelectronics: Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

***et: Trans IGBT Chip N-CH 600V 40A 3-Pin TO-247 Tube

***el Electronic: Cap Ceramic 330pF 50V C0G 5% SMD 0805 125°C Punched Paper T/R

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247

***ure Electronics: IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop

***(Formerly Allied Electronics): IGBT Trench gate,600V 20A/100 deg,TO247

***ical: Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail

***nell: IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:34A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:56A; No. of Pins:3; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:45ns; Time, Fall Typ:45ns; Time, Rise:11ns; Transistors, No. of:1

***rchild Semiconductor: The HGTP7N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

***et: TO-247, SINGLE, N-CHANNEL 600V SMPS II SERIES IGBT

***i-Key: IGBT 600V 28A 125W TO247

***ser: IGBTs Sgl, N-Ch 600V

***i-Key Marketplace: N-CHANNEL IGBT

***el Nordic: Contact for details

Market price

부분 #	제조	설명	재고	가격
IRG4PC40UPBF DISTI # V36:1790_13891967	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-247AC Tube	7	100:$2.2850 25:$3.0890 10:$3.2690 1:$3.7510
IRG4PC40UPBF DISTI # IRG4PC40UPBF-ND	Infineon Technologies AG	IGBT 600V 40A 160W TO247AC RoHS: Compliant Min Qty: 400 Container: Bag	Limited Supply - Call
IRG4PC40UPBF DISTI # 12605429	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-247AC Tube	10	10:$1.4986
IRG4PC40UPBF DISTI # 27569940	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-247AC Tube	7	3:$3.7510
IRG4PC40UPBF DISTI # 63J7522	Infineon Technologies AG	SINGLE IGBT, 600V, 40A,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.15V,Power Dissipation Pd:160W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	0
IRG4PC40UPBF DISTI # 70017069	Infineon Technologies AG	600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE RoHS: Compliant	20	1:$5.7900 10:$5.1100 100:$4.4600 500:$3.8600 1000:$3.4100
IRG4PC40UPBF DISTI # 942-IRG4PC40UPBF	Infineon Technologies AG	IGBT Transistors 600V UltraFast 8-60kHz RoHS: Compliant	35	1:$4.3900 10:$3.7300 100:$3.2400 250:$3.0700 500:$2.7600 1000:$2.3300 2500:$2.2100
IRG4PC40UPBF	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant	320	1000:$2.1800 500:$2.3000 100:$2.3900 25:$2.5000 1:$2.6900
IRG4PC40UPBF	International Rectifier	RoHS: Not Compliant	17955	1000:$2.1800 500:$2.3000 100:$2.3900 25:$2.5000 1:$2.6900
IRG4PC40UPBF DISTI # 5410878	Infineon Technologies AG	TRANSISTOR IGBT N-CH 600V 40A TO247AC, EA	1634	1:£3.4000 25:£2.2000 100:£1.9000 250:£1.7200 500:£1.6100
IRG4PC40UPBF DISTI # IRG4PC40UPBF	Infineon Technologies AG	600V 40A 160W TO247AC RoHS: Compliant	105	5:€2.3900 25:€1.7900 100:€1.5900 200:€1.4700
IRG4PC40UPBF DISTI # 8650560	Infineon Technologies AG	IGBT, 600V, 40A, TO-247AC RoHS: Compliant	47	1:$6.9600 10:$5.9100 100:$5.1300 250:$4.8700 500:$4.3700 1000:$3.6900 2500:$3.5000 5000:$3.3800
IRG4PC40UPBF DISTI # 8650560	Infineon Technologies AG	IGBT, 600V, 40A, TO-247AC RoHS: Compliant	45	1:£3.4000 10:£2.2000 100:£1.9000 250:£1.7200 500:£1.6100
IRG4PC40UPBF DISTI # C1S322000570401	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	7	1:$3.7510

영상	부분 #	설명
	Mfr.#: IRG4PC30KDPBF OMO.#: OMO-IRG4PC30KDPBF	IGBT Transistors 600V UltraFast 8-25kHz
	Mfr.#: IRG4PC40WPBF OMO.#: OMO-IRG4PC40WPBF	IGBT Transistors 600V Warp 60-150kHz
	Mfr.#: IRG4PC40UD-EPBF OMO.#: OMO-IRG4PC40UD-EPBF-INFINEON-TECHNOLOGIES	IGBT Transistors 600V UltraFast 8-60kHz
	Mfr.#: IRG4PC50UPBF OMO.#: OMO-IRG4PC50UPBF-INFINEON-TECHNOLOGIES	IGBT Transistors 600V UltraFast 8-60kHz
	Mfr.#: IRG4PC30KD OMO.#: OMO-IRG4PC30KD-INFINEON-TECHNOLOGIES	IGBT 600V 28A 100W TO247AC
	Mfr.#: IRG4PC30UDPBF,IRG4PC30UD OMO.#: OMO-IRG4PC30UDPBF-IRG4PC30UD-1190	신규 및 오리지널
	Mfr.#: IRG4PC40SPBF,IRG4PC40S OMO.#: OMO-IRG4PC40SPBF-IRG4PC40S-1190	신규 및 오리지널
	Mfr.#: IRG4PC50FD-E OMO.#: OMO-IRG4PC50FD-E-1190	신규 및 오리지널
	Mfr.#: IRG4PC50UD,IRG4PC50UDPBF OMO.#: OMO-IRG4PC50UD-IRG4PC50UDPBF-1190	신규 및 오리지널
	Mfr.#: IRG4PC50WPBF,IRG4PC50W,G OMO.#: OMO-IRG4PC50WPBF-IRG4PC50W-G-1190	신규 및 오리지널

IRG4PC40UPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes