OMO ElectronicOMO Electronic
Expand menu
0 카트

STGW60H65DFB

STGW60H65DFB
Mfr. #:
STGW60H65DFB
제조사:
STMicroelectronics
설명:
IGBT 650V 80A 375W TO-247
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STGW60H65DFB 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STGW60H65DFB 추가 정보 STGW60H65DFB Product Details
제품 속성
속성 값
제조사
ST마이크로일렉트로닉스
제품 카테고리
IGBT - 싱글
시리즈
600-650V IGBTs
포장
튜브
단위 무게
1.340411 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-247-3
입력 유형
기준
장착형
구멍을 통해
공급자-장치-패키지
TO-247
구성
하나의
파워맥스
375W
역복구-시간-trr
60ns
전류 수집기 Ic-Max
80A
Voltage-Collector-Emitter-Breakdown-Max
650V
IGBT형
트렌치 필드 스톱
전류 수집기 펄스 Icm
240A
Vce-on-Max-Vge-Ic
2V @ 15V, 60A
스위칭 에너지
1.09mJ (on), 626μJ (off)
게이트 차지
306nC
Td-on-off-25°C
51ns/160ns
시험조건
400V, 60A, 5 Ohm, 15V
Pd 전력 손실
375 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
컬렉터-이미터-전압-VCEO-최대
650 V
컬렉터-이미터-포화-전압
1.6 V
연속 수집기 전류 at-25-C
80 A
게이트 이미 터 누설 전류
250 nA
최대 게이트 이미 터 전압
20 V
연속 수집기 전류 Ic-Max
60 A
Tags
STGW60H65DF, STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Advanced Trench Gate Field Stop Through Hole IGBT - TO-247-3
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube
***ied Electronics & Automation
IGBT N-Ch 650V 60A High-Speed TO247
***ronik
IGBT 650V 80A 1,75V TO247-3
***i-Key
IGBT 650V 80A 375W TO-247
***ark
Igbt, Single, 650V, 80A, To-247-3; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
***nell
IGBT, SINGOLO, 650V, 80A, TO-247-3; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:375W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
부분 # 제조 설명 재고 가격
STGW60H65DFB
DISTI # 497-14367-ND		STMicroelectronicsIGBT 650V 80A 375W TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$2.7783
  • 510:$3.2943
  • 120:$3.8697
  • 30:$4.4650
  • 1:$5.2600
STGW60H65DFB-4
DISTI # STGW60H65DFB-4-ND		STMicroelectronicsIGBT
RoHS: Not compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$5.6963
STGW60H65DFB
DISTI # STGW60H65DFB		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: STGW60H65DFB)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€3.0400
  • 10:€2.8000
  • 100:€2.6800
  • 250:€2.5700
  • 500:€2.4600
  • 1000:€2.0600
STGW60H65DFB
DISTI # STGW60H65DFB		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW60H65DFB)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$2.7900
  • 1200:$2.6900
  • 2400:$2.4900
  • 3600:$2.3900
  • 6000:$2.3900
STGW60H65DFB-4
DISTI # STGW60H65DFB-4		STMicroelectronicsPTD HIGH VOLTAGE - Trays (Alt: STGW60H65DFB-4)
RoHS: Compliant
Min Qty: 600
Container: Tray		Americas - 0
  • 600:$5.1900
  • 1200:$4.9900
  • 2400:$4.6900
  • 3600:$4.4900
  • 6000:$4.3900
STGW60H65DFB
DISTI # 511-STGW60H65DFB		STMicroelectronicsIGBT Transistors 600V 60A trench gate field-stop IGBT
RoHS: Compliant		0
  • 1:$5.0000
  • 10:$4.2500
  • 100:$3.6800
  • 250:$3.4900
  • 500:$3.1300
  • 1000:$2.6400
  • 2500:$2.5100
STGW60H65DFB-4
DISTI # 511-STGW60H65DFB-4		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed0
  • 1:$8.3300
  • 10:$7.5300
  • 25:$7.1800
  • 100:$6.2300
  • 250:$5.9600
  • 500:$5.4300
  • 1000:$4.7300
STGW60H65DFB
DISTI # 2629740		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247-3
RoHS: Compliant		0
  • 500:£2.0500
  • 250:£2.2000
  • 100:£2.3800
  • 10:£2.6500
  • 1:£3.2000
STGW60H65DFB-4
DISTI # 2778105		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant		100
  • 100:£3.5600
  • 50:£3.5700
  • 10:£3.5800
  • 5:£3.6300
  • 1:£3.7000
STGW60H65DFB-4
DISTI # 2778105		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant		100
  • 250:$8.0900
  • 100:$8.6800
  • 50:$9.7400
  • 10:$10.8500
  • 5:$12.2400
  • 1:$14.0400
STGW60H65DFB-4
DISTI # XSFP00000113820		STMicroelectronicsPower Field-Effect Transistor, 11A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-263AB
RoHS: Compliant		80 in Stock0 on Order
  • 80:$11.0000
  • 17:$12.1000
영상 부분 # 설명
STGW60H65DFB

Mfr.#: STGW60H65DFB

OMO.#: OMO-STGW60H65DFB

 IGBT Transistors 600V 60A trench gate field-stop IGBT
STGW60H65FB

Mfr.#: STGW60H65FB

OMO.#: OMO-STGW60H65FB

 IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT
STGW60H65DRF

Mfr.#: STGW60H65DRF

OMO.#: OMO-STGW60H65DRF

 IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
STGW60H65DF

Mfr.#: STGW60H65DF

OMO.#: OMO-STGW60H65DF

 IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
STGW60V60F

Mfr.#: STGW60V60F

OMO.#: OMO-STGW60V60F

 IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT
STGW60H65F

Mfr.#: STGW60H65F

OMO.#: OMO-STGW60H65F

 IGBT Transistors 60A 650V FST IGBT Very High Switching
STGW60V60F

Mfr.#: STGW60V60F

OMO.#: OMO-STGW60V60F-STMICROELECTRONICS

 IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT
STGW60H60DLFB

Mfr.#: STGW60H60DLFB

OMO.#: OMO-STGW60H60DLFB-STMICROELECTRONICS

 IGBT 600V 80A 375W TO-247
STGW60H65DF

Mfr.#: STGW60H65DF

OMO.#: OMO-STGW60H65DF-STMICROELECTRONICS

 IGBT 650V 120A 360W TO247
STGW60H65DFB-4

Mfr.#: STGW60H65DFB-4

OMO.#: OMO-STGW60H65DFB-4-STMICROELECTRONICS

 PTD HIGH VOLTAGE (Alt: STGW60H65DFB-4)
유효성
재고:
Available
주문 시:
1000
수량 입력:
STGW60H65DFB의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$3.58
US$3.58
10
US$3.41
US$34.06
100
US$3.23
US$322.65
500
US$3.05
US$1 523.65
1000
US$2.87
US$2 868.00
시작
최신 제품
  • PWD13F60 High-Density Power Driver
    PWD13F60 High-Density Power Driver
    STMicroelectronics' PWD13F60 integrated power MOSFET full bridge with embedded gate drivers in a 13 mm x 10 mm outline.
  • Compare STGW60H65DFB
    Compare STGW60H65DFB
    STGW60H65DF vs STGW60H65DFB vs STGW60H65DFB4
  • STSPIN32F0 Motor-Control System
    STSPIN32F0 Motor-Control System
    STMicroelectronics' STSPIN32F0 motor-control system-in-package combines the power and flexibility of a microcontroller-based drive with ease of use and space efficiency.
  • STripFET VI DeepGATE Series Power MOSFETs
    STripFET VI DeepGATE Series Power MOSFETs
    STMicroelectronics' 80 V MOSFETs with DeepGATE process integration result a more efficient and denser design in applications such as motor control and DC/DC converters.
  • ESDA8P30-1T2 TVS Diode
    ESDA8P30-1T2 TVS Diode
    STMicroelectronics' ESDA8P30-1T2 unidirectional, single-line TVS diode provides USB VBUS, power supply, and battery protection.
  • CLOUD-ST25TA02KB Evaluation Board
    CLOUD-ST25TA02KB Evaluation Board
    STMicroelectronics' CLOUD-ST25TA02KB evaluation board for the ST25TA02KB-P device can be configured for various uses such as indicating field detection.
More Newest Products
Top