BSC076N06NS3GATMA1

BSC076N06NS3GATMA1
Mfr. #:
BSC076N06NS3GATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BSC076N06NS3GATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
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HTML Datasheet:
BSC076N06NS3GATMA1 DatasheetBSC076N06NS3GATMA1 Datasheet (P4-P6)BSC076N06NS3GATMA1 Datasheet (P7-P9)
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
PG-TDSON-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
60 V
Id - 연속 드레인 전류:
50 A
Rds On - 드레인 소스 저항:
7.6 mOhms
Vgs th - 게이트 소스 임계 전압:
2 V
Vgs - 게이트 소스 전압:
10 V
Qg - 게이트 차지:
37 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
69 W
구성:
하나의
채널 모드:
상승
상표명:
옵티모스
포장:
키:
1.27 mm
길이:
5.9 mm
시리즈:
OptiMOS 3
트랜지스터 유형:
1 N-Channel
너비:
5.15 mm
상표:
인피니언 테크놀로지스
순방향 트랜스컨덕턴스 - 최소:
30 S
가을 시간:
5 ns
상품 유형:
MOSFET
상승 시간:
40 ns
공장 팩 수량:
5000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
20 ns
일반적인 켜기 지연 시간:
15 ns
부품 번호 별칭:
BSC076N06NS3 BSC76N6NS3GXT G SP000453656
단위 무게:
0.010582 oz
Tags
BSC076N06NS3G, BSC076N06, BSC076, BSC07, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 7.6 mOhm 50 nC OptiMOS™ Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 60V 50A Automotive 8-Pin TDSON EP T/R
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; On Resistance Rds(On):0.0062Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:-Rohs Compliant: Yes
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ure Electronics
Single N-Channel 60 V 6.6 mOhm 58 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:56A; On Resistance Rds(On):0.0066Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 56A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N-CH, 60V, 56A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0066ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 99W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***et
Trans MOSFET N-CH 60V 64A 8-Pin TDSON T/R
***nell
MOSFET, N-CH, 60V, 64A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 46W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***et
Trans MOSFET N-CH 60V 21.5A 8-Pin PowerPAK SO T/R
*** Americas
MOSFET 60V 6mOhm@10V 60A N-Ch G-IV
***i-Key
MOSFET N-CH 60V 60A PPAK SO-8
***ark
N-Channel 60-V (D-S) Mosfet
*** Europe
N-CH POWERPAK 60V SO-8 BWL
***ical
Trans MOSFET N-CH 60V 60A Automotive 8-Pin Power QFN EP T/R
***emi
N-Channel PowerTrench® MOSFET 60V, 60A, 6.5mΩ
*** Stop Electro
Power Field-Effect Transistor, 60A I(D), 60V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
60V, 60A, 6.5mO, N-ch, Power56
***el Electronic
IC RTC CLK/CALENDAR I2C 8-TSSOP
***ark
NMOS PWR56 60V 8.5 MOHM / REEL
***(Formerly Allied Electronics)
Transistor, N-channel, enhancement mode MOSFET, MSL 1, 60V, 49A to 60A, SO-8
***ure Electronics
DMT6008LFG Series 60 V 13 A N-Channel Enhancement Mode Mosfet - PWDI3333-8
***et
Trans MOSFET N-CH 60V 13A 8-Pin PowerDI 3333-8 T/R 2K
***ark
Mosfet, N-Ch, 60V, 60A, Powerdi 3333 Rohs Compliant: Yes
***des Inc SCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET, 12±V VGS
*** Electronics
MOSFET N-CH 60V 13A PWDI3333-8
***el Electronic
CAP CER 8200PF 50V C0G/NP0 1206
부분 # 제조 설명 재고 가격
BSC076N06NS3GATMA1
DISTI # BSC076N06NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
584In Stock
  • 1000:$0.5758
  • 500:$0.7293
  • 100:$0.9404
  • 10:$1.1900
  • 1:$1.3400
BSC076N06NS3GATMA1
DISTI # BSC076N06NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
584In Stock
  • 1000:$0.5758
  • 500:$0.7293
  • 100:$0.9404
  • 10:$1.1900
  • 1:$1.3400
BSC076N06NS3GATMA1
DISTI # BSC076N06NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.4957
BSC076N06NS3GXT
DISTI # BSC076N06NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC076N06NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.3899
  • 10000:$0.3759
  • 20000:$0.3619
  • 30000:$0.3499
  • 50000:$0.3439
BSC076N06NS3GATMA1
DISTI # 47Y7996
Infineon Technologies AGMOSFET Transistor, N Channel, 50 A, 60 V, 0.0062 ohm, 10 V, 3 V RoHS Compliant: Yes0
  • 1:$1.1200
  • 10:$0.9490
  • 25:$0.8760
  • 50:$0.8020
  • 100:$0.7290
  • 250:$0.6870
  • 500:$0.6440
  • 1000:$0.5090
BSC076N06NS3GATMA1.
DISTI # 25AC6433
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0062ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:69W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3900
  • 10000:$0.3760
  • 20000:$0.3620
  • 30000:$0.3500
  • 50000:$0.3440
BSC076N06NS3 G
DISTI # 726-BSC076N06NS3G
Infineon Technologies AGMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
RoHS: Compliant
296
  • 1:$1.1200
  • 10:$0.9490
  • 100:$0.7290
  • 500:$0.6440
  • 1000:$0.5090
BSC076N06NS3GATMA1
DISTI # 726-BSC076N06NS3GATM
Infineon Technologies AGMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
RoHS: Compliant
0
  • 1:$1.1200
  • 10:$0.9490
  • 100:$0.7290
  • 500:$0.6440
  • 1000:$0.5090
BSC076N06NS3GATMA1
DISTI # 8259137P
Infineon Technologies AGMOSFET N-CH 50A 60V OPTIMOS3 TDSON8EP, RL800
  • 200:£0.5000
BSC076N06NS3GATMA1
DISTI # 2443422
Infineon Technologies AGMOSFET, N CH, 60V, 50A, TDSON-8
RoHS: Compliant
0
  • 5:£0.7130
  • 25:£0.6120
  • 100:£0.5100
  • 250:£0.5040
  • 500:£0.4970
BSC076N06NS3GATMA1
DISTI # 2443422
Infineon Technologies AGMOSFET, N CH, 60V, 50A, TDSON-8
RoHS: Compliant
0
  • 1:$1.7800
  • 10:$1.5100
  • 100:$1.1600
  • 500:$1.0200
  • 1000:$0.8060
  • 5000:$0.7140
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유효성
재고:
12
주문 시:
1995
수량 입력:
BSC076N06NS3GATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.11
US$1.11
10
US$0.95
US$9.49
100
US$0.73
US$72.90
500
US$0.64
US$322.00
1000
US$0.51
US$509.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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