SIHB30N60EGE3

Mfr. #:: SIHB30N60EGE3
제조사:: Vishay Intertechnologies
설명:: Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIHB30N60EGE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

Tags: SIHB30N60E, SIHB30, SIHB3, SIHB, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

부분 #	제조	설명	재고	가격
SIHB30N60E-GE3 DISTI # V36:1790_09219022	Vishay Intertechnologies	Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK RoHS: Compliant	0	1000000:$2.9720 500000:$2.9780 100000:$3.8580 10000:$5.7370 1000:$6.0700
SIHB30N60E-GE3 DISTI # SIHB30N60E-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 29A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube	776In Stock	3000:$3.0444 1000:$3.2046 100:$4.4636 25:$5.1504 10:$5.4480 1:$6.0700
SIHB30N60E-GE3 DISTI # SIHB30N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SIHB30N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$2.6900 6000:$2.7900 4000:$2.8900 2000:$2.9900 1000:$3.0900
SIHB30N60E-GE3 DISTI # 78-SIHB30N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	279	1:$6.1000 10:$5.0500 100:$4.1600 250:$4.0300 500:$3.6100 1000:$3.0500 2000:$2.8900
SIHB30N60E-E3 DISTI # 781-SIHB30N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	0
SIHB30N60E-GE3	Vishay Intertechnologies		1000
SIHB30N60E-GE3	Vishay Intertechnologies		96
SIHB30N60EGE3	Vishay Intertechnologies	Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	1000
SIHB30N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	Americas -

관련 상품

영상	부분 #	설명
	Mfr.#: SIHB30N60AEL-GE3 OMO.#: OMO-SIHB30N60AEL-GE3	MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB30N60E-E3 OMO.#: OMO-SIHB30N60E-E3	MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB30N60E-E3 OMO.#: OMO-SIHB30N60E-E3-VISHAY	RF Bipolar Transistors MOSFET N-Channel 600V
	Mfr.#: SIHB30N60AEL-GE3 OMO.#: OMO-SIHB30N60AEL-GE3-VISHAY	MOSFET N-CHAN 600V D2PAK
	Mfr.#: SIHB30N60E-GE3-CUT TAPE OMO.#: OMO-SIHB30N60E-GE3-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: SIHB30N60E OMO.#: OMO-SIHB30N60E-1190	신규 및 오리지널
	Mfr.#: SIHB30N60E-GE3 OMO.#: OMO-SIHB30N60E-GE3-VISHAY	MOSFET N-CH 600V 29A D2PAK
	Mfr.#: SIHB30N60EGE3 OMO.#: OMO-SIHB30N60EGE3-1190	Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB