IPW60R090CFD7XKSA1

IPW60R090CFD7XKSA1
Mfr. #:
IPW60R090CFD7XKSA1
제조사:
Infineon Technologies
설명:
MOSFET HIGH POWER_NEW
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPW60R090CFD7XKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPW60R090CFD7XKSA1 Datasheet
ECAD Model:
추가 정보:
IPW60R090CFD7XKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
25 A
Rds On - 드레인 소스 저항:
90 mOhms
Vgs th - 게이트 소스 임계 전압:
3.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
51 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
125 W
구성:
하나의
채널 모드:
상승
포장:
튜브
시리즈:
CoolMOS CFD7
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
6 ns
상품 유형:
MOSFET
상승 시간:
17 ns
공장 팩 수량:
240
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
88 ns
일반적인 켜기 지연 시간:
33 ns
부품 번호 별칭:
IPW60R090CFD7 SP001686056
Tags
IPW60R09, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 SJ High Voltage MOSFET 600V 90/95mOhm TO-247
***ical
600V CoolMOS CFD7 Power Transistor
***ronik
N-CH 600V 50A 90mOhm TO-247-3
***i-Key
HIGH POWER_NEW
***ark
Mosfet, 600V, 25A, 150Deg C, 125W; Transistor Polarity:n Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, 600V, 25A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, 600V, 25A, 150° C, 125W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:25A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.069ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS CFD7 is Infineons latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS 7 series. CoolMOS CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. | Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
부분 # 제조 설명 재고 가격
IPW60R090CFD7XKSA1
DISTI # IPW60R090CFD7XKSA1-ND
Infineon Technologies AGHIGH POWER_NEW
RoHS: Compliant
Min Qty: 1
Container: Tube
241In Stock
  • 2640:$3.4439
  • 720:$4.2984
  • 240:$5.0493
  • 25:$5.8260
  • 10:$6.1630
  • 1:$6.8600
IPW60R090CFD7XKSA1
DISTI # IPW60R090CFD7XKSA1
Infineon Technologies AGCoolMOS CFD7 SJ High Voltage MOSFET 600V 90/95mOhm TO-247 - Rail/Tube (Alt: IPW60R090CFD7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 1440:$3.0900
  • 2400:$3.0900
  • 960:$3.2900
  • 480:$3.3900
  • 240:$3.4900
IPW60R090CFD7XKSA1
DISTI # SP001686056
Infineon Technologies AGCoolMOS CFD7 SJ High Voltage MOSFET 600V 90/95mOhm TO-247 (Alt: SP001686056)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€2.7900
  • 500:€2.8900
  • 100:€2.9900
  • 50:€3.0900
  • 25:€3.1900
  • 10:€3.4900
  • 1:€4.2900
IPW60R090CFD7XKSA1
DISTI # 71AC0409
Infineon Technologies AGMOSFET, 600V, 25A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes240
  • 500:$4.1300
  • 250:$4.6100
  • 100:$4.8600
  • 50:$5.1000
  • 25:$5.3500
  • 10:$5.6000
  • 1:$6.5900
IPW60R090CFD7XKSA1
DISTI # 726-IPW60R090CFD7XKS
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
0
  • 1:$6.5200
  • 10:$5.5400
  • 100:$4.8100
  • 250:$4.5600
  • 500:$4.0900
IPW60R090CFD7XKSA1
DISTI # 2916151
Infineon Technologies AGMOSFET, 600V, 25A, 150DEG C, 125W
RoHS: Compliant
480
  • 1000:$4.9500
  • 500:$5.0400
  • 250:$5.3100
  • 100:$5.6200
  • 10:$6.3500
  • 1:$6.7900
IPW60R090CFD7XKSA1
DISTI # XSKDRABV0051213
Infineon Technologies AG 
RoHS: Compliant
720 in Stock0 on Order
  • 720:$4.3200
  • 240:$4.6300
IPW60R090CFD7XKSA1
DISTI # 2916151
Infineon Technologies AGMOSFET, 600V, 25A, 150DEG C, 125W455
  • 500:£2.9900
  • 250:£3.3400
  • 100:£3.5200
  • 10:£4.0600
  • 1:£5.2500
영상 부분 # 설명
BTB08-600SWRG

Mfr.#: BTB08-600SWRG

OMO.#: OMO-BTB08-600SWRG

Triacs 8.0 Amp 600 Volt
BTB08-600SWRG

Mfr.#: BTB08-600SWRG

OMO.#: OMO-BTB08-600SWRG-STMICROELECTRONICS

TRIAC SENS GATE 600V 8A TO220AB
RC1206JR-0733RL

Mfr.#: RC1206JR-0733RL

OMO.#: OMO-RC1206JR-0733RL-YAGEO

Thick Film Resistors - SMD 33 OHM 5%
유효성
재고:
468
주문 시:
2451
수량 입력:
IPW60R090CFD7XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$6.52
US$6.52
10
US$5.54
US$55.40
100
US$4.81
US$481.00
250
US$4.56
US$1 140.00
500
US$4.09
US$2 045.00
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