SI4456DY-T1-E3

Mfr. #:: SI4456DY-T1-E3
제조사:: Vishay
설명:: MOSFET N-CH 40V 33A 8-SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4456DY-T1-E3 데이터 시트
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ECAD Model:
추가 정보:: SI4456DY-T1-E3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: IC 칩

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI4456DY-E3

단위 무게: 0.006596 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: 8-SO

구성: 하나의

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 7.8W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 40V

입력-커패시턴스-Ciss-Vds: 5670pF @ 20V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 33A (Tc)

Rds-On-Max-Id-Vgs: 3.8 mOhm @ 20A, 10V

Vgs-th-Max-Id: 2.8V @ 250μA

Gate-Charge-Qg-Vgs: 122nC @ 10V

Pd 전력 손실: 3.5 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 15 ns 8 ns

상승 시간: 208 ns 58 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 23 A

Vds-드레인-소스-고장-전압: 40 V

Rds-On-Drain-Source-Resistance: 3.8 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 56 ns 55 ns

일반 켜기 지연 시간: 145 ns 21 ns

채널 모드: 상승

Tags: SI4456, SI445, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4456DY-T1-E3 설명

***ure Electronics: Single N-Channel 40 V 0.0038 Ohm Surface Mount Power Mosfet - SOIC-8

***C: MOSFET N-CH 40V 33A 8-SOIC MOSFET N-CH 40V 33A 8-SOIC

***et Europe: Trans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R

***nell: N CHANNEL MOSFET, 40V, 33A, SOIC

***i-Key: MOSFET N-CH 40V 33A 8-SOIC

***: N-CHANNEL 40-V (D-S) MOSFET

***ser: N-Channel MOSFETs N-CH 40V(D-S)

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0031Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:7.8W; No. Of Pins:8Pins Rohs Compliant: Yes

***ment14 APAC: N CHANNEL MOSFET, 40V, 33A, SOIC; Transi; N CHANNEL MOSFET, 40V, 33A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.8V; No. of Pins:8

SI4456DY-T1-E3 추가 정보

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

부분 #	제조	설명	재고	가격
SI4456DY-T1-E3 DISTI # SI4456DY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 33A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$1.1847
SI4456DY-T1-E3 DISTI # SI4456DY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 33A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.3107 500:$1.5818 100:$2.0338 10:$2.5310 1:$2.8000
SI4456DY-T1-E3 DISTI # SI4456DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 33A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.3107 500:$1.5818 100:$2.0338 10:$2.5310 1:$2.8000
SI4456DY-T1-E3 DISTI # SI4456DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4456DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.8399 5000:$0.8149 10000:$0.7819 15000:$0.7599 25000:$0.7399
SI4456DY-T1-E3 DISTI # 64M1992	Vishay Intertechnologies	Trans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 64M1992) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$2.8000 10:$2.3300 25:$2.1500 50:$1.9800 100:$1.8000 250:$1.6900 500:$1.5800
SI4456DY-T1-E3 DISTI # 64M1992	Vishay Intertechnologies	N CHANNEL MOSFET, 40V, 33A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:40V,On Resistance Rds(on):4.5mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.8V,Product Range:- , RoHS Compliant: Yes	0	1:$2.8000 10:$2.3300 25:$2.1500 50:$1.9800 100:$1.8000 250:$1.6900 500:$1.5800
SI4456DY-T1-E3. DISTI # 26AC3332	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) MOSFET , ROHS COMPLIANT: YES	0	1:$0.8400 5000:$0.8150 10000:$0.7820 15000:$0.7600 25000:$0.7400
SI4456DY-T1-E3 DISTI # 781-SI4456DY-T1-E3	Vishay Intertechnologies	MOSFET 40V 33A 7.8W 3.8mohm @ 10V RoHS: Compliant	7	1:$2.8000 10:$2.3300 100:$1.8000 500:$1.5800 1000:$1.5100 2500:$1.5000
SI4456DY-T1-E3	Vishay Intertechnologies	MOSFET 40V 33A 7.8W 3.8mohm @ 10V	Americas -

영상	부분 #	설명
	Mfr.#: SI4456DY-T1-E3 OMO.#: OMO-SI4456DY-T1-E3	MOSFET 40V 33A 7.8W 3.8mohm @ 10V
	Mfr.#: SI4456DY-T1-GE3 OMO.#: OMO-SI4456DY-T1-GE3	MOSFET 40V 33A 7.8W 3.8mohm @ 10V
	Mfr.#: SI4456DY-T1-GE3 OMO.#: OMO-SI4456DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 40V 33A 7.8W 3.8mohm @ 10V
	Mfr.#: SI4456DY-T1-E3-CUT TAPE OMO.#: OMO-SI4456DY-T1-E3-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: SI4456DY-T1-E3 OMO.#: OMO-SI4456DY-T1-E3-VISHAY	MOSFET N-CH 40V 33A 8-SOIC

SI4456DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes