SIZ710DT-T1-GE3

Mfr. #:: SIZ710DT-T1-GE3
제조사:: Vishay
설명:: MOSFET 2N-CH 20V 16A POWERPAIR
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIZ710DT-T1-GE3 데이터 시트
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추가 정보:: SIZ710DT-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SIZ710DT-GE3

장착 스타일: SMD/SMT

패키지 케이스: 6-PowerPair

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: 6-PowerPair

구성: 듀얼

FET형: 2 N-Channel (Half Bridge)

파워맥스: 27W, 48W

트랜지스터형: 2 N-Channel

드레인-소스 전압 Vdss: 20V

입력-커패시턴스-Ciss-Vds: 820pF @ 10V

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 16A, 35A

Rds-On-Max-Id-Vgs: 6.8 mOhm @ 19A, 10V

Vgs-th-Max-Id: 2.2V @ 250μA

Gate-Charge-Qg-Vgs: 18nC @ 10V

Pd 전력 손실: 27 W 48 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

Vgs 게이트 소스 전압: +/- 20 V

Id-연속-드레인-전류: 16 A

Vds-드레인-소스-고장-전압: 20 V

Vgs-th-Gate-Source-Threshold-Voltage: 1 V to 2.2 V

Rds-On-Drain-Source-Resistance: 5.5 mOhms 2.7 mOhms

트랜지스터 극성: N-채널

Qg-Gate-Charge: 11.5 nC 38 nC

순방향 트랜스컨덕턴스-최소: 45 S 85 S

Tags: SIZ710DT-T, SIZ71, SIZ7, SiZ

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIZ710DT-T1-GE3 설명

***ure Electronics: Dual N-Channel 20 V 0.0068 Ohm Surface Mount Power MosFet - PowerPAIR 6 x 3.7 mm

***et Europe: Transistor MOSFET Array Dual N-CH 20V 16A/35A 6-Pin PowerPAIR T/R

***ark: MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:35A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.0068ohm; Rds(on) Test Voltage Vgs:10V

***ment14 APAC: MOSFET,NN CH,HALF BR,DIO,20V,PPAIR6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:4.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAIR; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):5500µohm; Power Dissipation Pd:4.6W

SIZ710DT-T1-GE3 추가 정보

Dual N-Channel TrenchFET® Power MOSFETs: Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

PowerPAIR® Dual-MOSFETs: Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency.

Market price

부분 #	제조	설명	재고	가격
SIZ710DT-T1-GE3 DISTI # V72:2272_09216120	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R RoHS: Compliant	2000	1000:$0.6544 500:$0.7412 250:$0.8087 100:$0.8367 25:$0.9213 10:$1.0236 1:$1.1931
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 16A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6In Stock	1000:$0.7308 500:$0.9257 100:$1.1936 10:$1.5100 1:$1.7100
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 16A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6In Stock	1000:$0.7308 500:$0.9257 100:$1.1936 10:$1.5100 1:$1.7100
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 16A POWERPAIR RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.6622
SIZ710DT-T1-GE3 DISTI # 30150542	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R RoHS: Compliant	2000	1000:$0.6544 500:$0.7412 250:$0.8087 100:$0.8367 25:$0.9213 12:$1.0236
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$0.6596 6000:$0.5074 9000:$0.4039 15000:$0.3412 30000:$0.3141 75000:$0.3044 150000:$0.2954
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€1.2499 6000:€0.8959 12000:€0.7269 18000:€0.6429 30000:€0.6149
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ710DT-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.6249 6000:$0.6069 12000:$0.5819 18000:$0.5659 30000:$0.5509
SIZ710DT-T1-GE3 DISTI # 83T3536	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$1.5100 25:$1.2400 50:$1.1000 100:$0.9510 250:$0.8850 500:$0.8180 1000:$0.7190
SIZ710DT-T1-GE3 DISTI # 65T1676	Vishay Intertechnologies	MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V , RoHS Compliant: Yes	0	1:$0.6370 3000:$0.6330 6000:$0.6020 12000:$0.5340
SIZ710DT-T1-GE3 DISTI # 781-SIZ710DT-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7 RoHS: Compliant	378	1:$1.5100 10:$1.2400 100:$0.9510 500:$0.8180 1000:$0.7190 3000:$0.7170
SIZ710DT-T1-GE3 DISTI # C1S803601344629	Vishay Intertechnologies	MOSFETs	2000	250:$0.8087 100:$0.8367 25:$0.9213 10:$1.0236
SIZ710DT-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7	Americas -
SIZ710DT-T1-GE3 DISTI # 2129099	Vishay Intertechnologies	MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPA RoHS: Compliant	0	3000:£0.6370

영상	부분 #	설명
	Mfr.#: SIZ710DT-T1-GE3 OMO.#: OMO-SIZ710DT-T1-GE3	MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
	Mfr.#: SIZ710DT-T1 OMO.#: OMO-SIZ710DT-T1-1190	신규 및 오리지널
	Mfr.#: SIZ710DT OMO.#: OMO-SIZ710DT-1190	신규 및 오리지널
	Mfr.#: SIZ710DT-T1-GE OMO.#: OMO-SIZ710DT-T1-GE-1190	신규 및 오리지널
	Mfr.#: SIZ710DT-T1-GE3 OMO.#: OMO-SIZ710DT-T1-GE3-VISHAY	MOSFET 2N-CH 20V 16A POWERPAIR

SIZ710DT-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes