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SIHG30N60E-GE3

SIHG30N60E-GE3
Mfr. #:
SIHG30N60E-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 600V Vds 30V Vgs TO-247AC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHG30N60E-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG30N60E-GE3 DatasheetSIHG30N60E-GE3 Datasheet (P4-P6)SIHG30N60E-GE3 Datasheet (P7-P8)
ECAD Model:
추가 정보:
SIHG30N60E-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247AC-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
29 A
Rds On - 드레인 소스 저항:
125 mOhms
Vgs th - 게이트 소스 임계 전압:
4 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
85 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
250 W
구성:
하나의
채널 모드:
상승
포장:
튜브
시리즈:
E
상표:
비쉐이 / 실리콘닉스
가을 시간:
36 ns
상품 유형:
MOSFET
상승 시간:
32 ns
공장 팩 수량:
500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
63 ns
일반적인 켜기 지연 시간:
19 ns
단위 무게:
1.340411 oz
Tags
SIHG30N60E, SIHG30, SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
부분 # 제조 설명 재고 가격
SIHG30N60E-GE3
DISTI # V99:2348_09219139		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant		389
  • 2500:$3.1150
  • 1000:$3.2160
  • 500:$3.6500
  • 250:$4.2360
  • 100:$4.3740
  • 10:$5.3010
  • 1:$6.9872
SIHG30N60E-GE3
DISTI # SIHG30N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 29A TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		453In Stock
  • 2500:$3.2119
  • 500:$4.0089
  • 100:$4.7093
  • 25:$5.4336
  • 10:$5.7480
  • 1:$6.4000
SIHG30N60E-GE3
DISTI # 25872836		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant		389
  • 2:$6.9872
SIHG30N60E-GE3
DISTI # 26884875		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant		178
  • 19:$4.1692
SIHG30N60E-GE3
DISTI # SIHG30N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC (Alt: SIHG30N60E-GE3)
RoHS: Compliant
Min Qty: 500		Asia - 2500
  • 1000:$0.6737
  • 500:$0.7219
SIHG30N60E-GE3
DISTI # SIHG30N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC - Tape and Reel (Alt: SIHG30N60E-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$2.8900
  • 3000:$2.9900
  • 2000:$3.0900
  • 1000:$3.1900
  • 500:$3.2900
SIHG30N60E-GE3
DISTI # 68W7051		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 68W7051)
RoHS: Not Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 500:$4.8000
  • 100:$5.5000
  • 50:$5.8900
  • 25:$6.2900
  • 10:$6.6800
  • 1:$8.0600
SIHG30N60E-GE3
DISTI # 68W7051		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 29A, TO-247AC-3,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.104ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes178
  • 1:$2.7100
  • 10:$2.7100
  • 25:$2.7100
  • 50:$2.7100
  • 100:$2.7100
  • 500:$2.7100
SIHG30N60E-E3
DISTI # 781-SIHG30N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		327
  • 1:$6.4400
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
  • 500:$4.1900
  • 1000:$3.5900
  • 2500:$3.0500
SIHG30N60E-GE3
DISTI # 78-SIHG30N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		49
  • 1:$6.4400
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
SIHG30N60E-GE3
DISTI # 7879421P		Vishay IntertechnologiesMOSFET N-CH 600V 29A LOW FOM TO247AC, RL419
  • 5:£1.9800
SIHG30N60E-GE3
DISTI # 7879421		Vishay IntertechnologiesMOSFET N-CH 600V 29A LOW FOM TO247AC, EA28
  • 5:£1.9800
  • 1:£2.0300
SIHG30N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		500
    SIHG30N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
    RoHS: Compliant    		Americas -
      SIHG30N60E-GE3
      DISTI # 2364082      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 29A, TO-247
      RoHS: Compliant      		52
      • 2500:$4.8600
      • 500:$6.0500
      • 100:$7.1000
      • 25:$8.1900
      • 10:$8.6700
      • 1:$9.6400
      SIHG30N60E-GE3
      DISTI # 2364082      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 29A, TO-2475925
      • 500:£3.0300
      • 250:£3.2700
      • 100:£3.3800
      • 10:£4.1000
      • 1:£5.4600
      영상 부분 # 설명
      VS-30TPS12LHM3

      Mfr.#: VS-30TPS12LHM3

      OMO.#: OMO-VS-30TPS12LHM3

      		 SCRs 20A If; 1200V Vr TO-247AD 3L
      SUP90330E-GE3

      Mfr.#: SUP90330E-GE3

      OMO.#: OMO-SUP90330E-GE3

      		 MOSFET 200V Vds 20V Vgs TO-220AB
      STW35N60DM2

      Mfr.#: STW35N60DM2

      OMO.#: OMO-STW35N60DM2

      		 MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
      FQA11N90-F109

      Mfr.#: FQA11N90-F109

      OMO.#: OMO-FQA11N90-F109

      		 MOSFET 900V N-Channel QFET
      FDPF15N65

      Mfr.#: FDPF15N65

      OMO.#: OMO-FDPF15N65

      		 MOSFET 650V 15A 0.44OHMS NCH POWER TRENCH
      SDUFD51-008G

      Mfr.#: SDUFD51-008G

      OMO.#: OMO-SDUFD51-008G

      		 USB Flash Drives 8GB USB 2.0 Flash Drive
      177918-1

      Mfr.#: 177918-1

      OMO.#: OMO-177918-1

      		 Headers & Wire Housings PWR DBL LCK PLATE 2P
      FQA11N90-F109

      Mfr.#: FQA11N90-F109

      OMO.#: OMO-FQA11N90-F109-ON-SEMICONDUCTOR

      		 MOSFET N-CH 900V 11.4A TO-3P
      VS-30TPS12LHM3

      Mfr.#: VS-30TPS12LHM3

      OMO.#: OMO-VS-30TPS12LHM3-VISHAY

      		 THYRISTOR - TO-247-E3
      SDUFD51-008G

      Mfr.#: SDUFD51-008G

      OMO.#: OMO-SDUFD51-008G-105

      		 Memory Modules USB Flash Drives USB Flash Drives
      유효성
      재고:
      29
      주문 시:
      2012
      수량 입력:
      SIHG30N60E-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$6.44
      US$6.44
      10
      US$5.33
      US$53.30
      100
      US$4.39
      US$439.00
      250
      US$4.25
      US$1 062.50
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
      시작
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