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FQP3N80C

FQP3N80C
Mfr. #:
FQP3N80C
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET 800V N-Ch Q-FET advance C-Series
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FQP3N80C 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
800 V
Id - 연속 드레인 전류:
3 A
Rds On - 드레인 소스 저항:
4.8 Ohms
Vgs - 게이트 소스 전압:
30 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
107 W
구성:
하나의
채널 모드:
상승
상표명:
QFET
포장:
튜브
키:
16.3 mm
길이:
10.67 mm
시리즈:
FQP3N80C
트랜지스터 유형:
1 N-Channel
유형:
MOSFET
너비:
4.7 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
3 S
가을 시간:
32 ns
상품 유형:
MOSFET
상승 시간:
43.5 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
22.5 ns
일반적인 켜기 지연 시간:
15 ns
부품 번호 별칭:
FQP3N80C_NL
단위 무게:
0.063493 oz
Tags
FQP3N80C, FQP3N8, FQP3N, FQP3, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220
***et Europe
Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220AB Rail
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:107W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:4.8ohm; Package / Case:TO-220; Power Dissipation Pd:107W; Power Dissipation Pd:107W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
부분 # 제조 설명 재고 가격
FQP3N80C
DISTI # V36:1790_06359293		ON SemiconductorN-CH/800V/3A/C-FET1489
  • 1000:$0.5629
  • 500:$0.7109
  • 100:$0.8032
  • 10:$1.0388
  • 1:$1.3349
FQP3N80C
DISTI # FQP3N80CFS-ND		ON SemiconductorMOSFET N-CH 800V 3A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		715In Stock
  • 5000:$0.5252
  • 3000:$0.5529
  • 1000:$0.5924
  • 100:$0.9083
  • 25:$1.1056
  • 10:$1.1650
  • 1:$1.3000
FQP3N80C
DISTI # 25977586		ON SemiconductorN-CH/800V/3A/C-FET1489
  • 16:$1.3349
FQP3N80C
DISTI # FQP3N80C		ON SemiconductorTrans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP3N80C)
RoHS: Compliant
Min Qty: 1		Europe - 2250
  • 1000:€0.4059
  • 500:€0.4369
  • 100:€0.4729
  • 50:€0.5159
  • 25:€0.5679
  • 10:€0.6309
  • 1:€0.7099
FQP3N80C
DISTI # FQP3N80C		ON SemiconductorTrans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP3N80C)
RoHS: Compliant
Min Qty: 455
Container: Bulk		Americas - 0
  • 4550:$0.6789
  • 2275:$0.6959
  • 1365:$0.7049
  • 910:$0.7139
  • 455:$0.7179
FQP3N80C
DISTI # FQP3N80C		ON SemiconductorTrans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP3N80C)
RoHS: Compliant
Min Qty: 1000		Asia - 0
  • 50000:$0.5361
  • 25000:$0.5450
  • 10000:$0.5638
  • 5000:$0.5839
  • 3000:$0.6056
  • 2000:$0.6289
  • 1000:$0.6540
FQP3N80C
DISTI # FQP3N80C		ON SemiconductorTrans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP3N80C)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.6409
  • 5000:$0.6579
  • 3000:$0.6659
  • 2000:$0.6749
  • 1000:$0.6789
FQP3N80C
DISTI # 97K0176		ON SemiconductorMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:800V,On Resistance Rds(on):4ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:107W,MSL:- RoHS Compliant: Yes1904
  • 1000:$0.6620
  • 500:$0.8130
  • 100:$0.9080
  • 10:$1.1600
  • 1:$1.3400
FQP3N80C
DISTI # 512-FQP3N80C		ON SemiconductorMOSFET 800V N-Ch Q-FET advance C-Series
RoHS: Compliant		1534
  • 1:$1.2300
  • 10:$1.0500
  • 100:$0.8090
  • 500:$0.7150
  • 1000:$0.5650
FQP3N80C_Q
DISTI # 512-FQP3N80C_Q		ON SemiconductorMOSFET 800V N-Ch Q-FET advance C-Series
RoHS: Not compliant		0
    FQP3N80CFairchild Semiconductor CorporationPower Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		80827
    • 1000:$0.6200
    • 500:$0.6500
    • 100:$0.6800
    • 25:$0.7100
    • 1:$0.7600
    FQP3N80C
    DISTI # 6715109    		ON SemiconductorMOSFET N-CHANNEL 800V 3A TO220AB, PK1405
    • 500:£0.5680
    • 250:£0.7360
    • 50:£0.8320
    • 25:£0.9300
    • 5:£1.0480
    FQP3N80C
    DISTI # 1095065    		ON SemiconductorMOSFET, N, TO-2201919
    • 500:£0.5560
    • 250:£0.5930
    • 100:£0.6290
    • 10:£0.8740
    • 1:£1.0900
    FQP3N80C
    DISTI # 1095065    		ON SemiconductorMOSFET, N, TO-220
    RoHS: Compliant    		2019
    • 1000:$0.8690
    • 500:$1.1100
    • 100:$1.2500
    • 10:$1.6200
    • 1:$1.8900
    영상 부분 # 설명
    MCP3221A0T-E/OT

    Mfr.#: MCP3221A0T-E/OT

    OMO.#: OMO-MCP3221A0T-E-OT

    		 Analog to Digital Converters - ADC 12-bit ADC I2C Single Channel
    STP5N80K5

    Mfr.#: STP5N80K5

    OMO.#: OMO-STP5N80K5

    		 MOSFET N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package
    DST2060C

    Mfr.#: DST2060C

    OMO.#: OMO-DST2060C

    		 Schottky Diodes & Rectifiers 60V 20A 2x Common Cathode
    PIC24FJ256GA702-I/SS

    Mfr.#: PIC24FJ256GA702-I/SS

    OMO.#: OMO-PIC24FJ256GA702-I-SS

    		 16-bit Microcontrollers - MCU 16-bit, 16 MIPS, 256KB Flash, 16KB RAM
    STP4LN80K5

    Mfr.#: STP4LN80K5

    OMO.#: OMO-STP4LN80K5

    		 MOSFET N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package
    LMG1020YFFR

    Mfr.#: LMG1020YFFR

    OMO.#: OMO-LMG1020YFFR

    		 Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
    LM2903HYPT

    Mfr.#: LM2903HYPT

    OMO.#: OMO-LM2903HYPT-STMICROELECTRONICS

    		 Analog Comparators CONDITIONING & INTERFACES
    STP4LN80K5

    Mfr.#: STP4LN80K5

    OMO.#: OMO-STP4LN80K5-STMICROELECTRONICS

    		 MOSFET N-CHANNEL 800V 3A TO220
    STP5N80K5

    Mfr.#: STP5N80K5

    OMO.#: OMO-STP5N80K5-STMICROELECTRONICS

    		 N-CHANNEL 800 V, 1.50 OHM TYP.,
    MCP3221A0T-E/OT

    Mfr.#: MCP3221A0T-E/OT

    OMO.#: OMO-MCP3221A0T-E-OT-MICROCHIP-TECHNOLOGY

    		 ADC 12BIT I2C INTERFACE SOT23-5
    유효성
    재고:
    Available
    주문 시:
    1984
    수량 입력:
    FQP3N80C의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$1.23
    US$1.23
    10
    US$1.05
    US$10.50
    100
    US$0.81
    US$80.90
    500
    US$0.72
    US$357.50
    1000
    US$0.56
    US$565.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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