IRF8313TRPBF

Mfr. #:: IRF8313TRPBF
제조사:: Infineon / IR
설명:: MOSFET MOSFT DUAL NCh 30V 9.7A
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF8313TRPBF 데이터 시트
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HTML Datasheet:: IRF8313TRPBF Datasheet IRF8313TRPBF Datasheet (P4-P6)IRF8313TRPBF Datasheet (P7-P9)IRF8313TRPBF Datasheet (P10)
ECAD Model:
추가 정보:: IRF8313TRPBF 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SO-8

채널 수:: 2 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 9.7 A

Rds On - 드레인 소스 저항:: 21.6 mOhms

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 6 nC

Pd - 전력 손실:: 2 W

구성:: 듀얼

포장:: 릴

키:: 1.75 mm

길이:: 4.9 mm

트랜지스터 유형:: 2 N-Channel

너비:: 3.9 mm

상표:: 인피니언 / IR

상품 유형:: MOSFET

공장 팩 수량:: 4000

하위 카테고리:: MOSFET

부품 번호 별칭:: SP001577640

단위 무게:: 0.019048 oz

Tags: IRF8313TRP, IRF8313T, IRF8313, IRF831, IRF83, IRF8, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF8313TRPBF 설명

***Components: In a Pack of 20, Dual N-Channel MOSFET, 9.7 A, 30 V, 8-Pin SOIC Infineon IRF8313TRPBF

***ure Electronics: Dual N-Channel 30 V 21.6 mOhm 9 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R

***ernational Rectifier: 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET

***i-Key: MOSFET N-CH DUAL 30V 9.7A 8-SOIC

***ied Electronics & Automation: MOSFET, DUAL N-CHANNEL, 30V, 9.7A, SO-8

***ukat: 2xN-Ch 30V 9,7A 2,0W 0,0155R SO8

***ark: Transistor Polarity:dual N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0125Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2W; No. Of Pins:8Pinsrohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, DUAL N CH, 30V, 9.7A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, DOPPIO CAN. N, 30V, 9.7A, SOIC-8; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:9.7A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0125ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:2W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

IRF8313TRPBF 추가 정보

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

부분 #	제조	설명	재고	가격
IRF8313TRPBF DISTI # V72:2272_13890321	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R RoHS: Compliant	7715	6000:$0.2216 3000:$0.2540 1000:$0.2545 500:$0.3033 250:$0.3042 100:$0.3051 25:$0.4214 10:$0.4235 1:$0.4854
IRF8313TRPBF DISTI # IRF8313TRPBFCT-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 9.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	18648In Stock	1000:$0.3542 500:$0.4341 100:$0.5739 10:$0.7340 1:$0.8300
IRF8313TRPBF DISTI # IRF8313TRPBFDKR-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 9.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	18648In Stock	1000:$0.3542 500:$0.4341 100:$0.5739 10:$0.7340 1:$0.8300
IRF8313TRPBF DISTI # IRF8313TRPBFTR-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 9.7A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	16000In Stock	4000:$0.3168
IRF8313TRPBF DISTI # 31228817	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R RoHS: Compliant	24000	4000:$0.1910
IRF8313TRPBF DISTI # 30571752	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R RoHS: Compliant	7715	6000:$0.2216 3000:$0.2540 1000:$0.2545 500:$0.3033 250:$0.3042 100:$0.3051 36:$0.4214
IRF8313TRPBF DISTI # SP001577640	Infineon Technologies AG	Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R (Alt: SP001577640) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 4000	4000:€0.2769 8000:€0.2269 16000:€0.2079 24000:€0.1919 40000:€0.1779
IRF8313TRPBF DISTI # IRF8313TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF8313TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.2039 8000:$0.1969 16000:$0.1899 24000:$0.1829 40000:$0.1799
IRF8313TRPBF DISTI # IRF8313TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R (Alt: IRF8313TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
IRF8313TRPBF DISTI # 42Y0424	Infineon Technologies AG	Dual MOSFET, Dual N Channel, 9.7 A, 30 V, 0.0125 ohm, 10 V, 1.8 V RoHS Compliant: Yes	3489	1:$0.7680 10:$0.6390 25:$0.5690 50:$0.4980 100:$0.4270 250:$0.4010 500:$0.3760 1000:$0.3500
IRF8313TRPBF. DISTI # 27AC6909	Infineon Technologies AG	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:9.7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0125ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation Pd:2W,No. of Pins:8PinsRoHS Compliant: Yes	0
IRF8313TRPBF DISTI # 70018020	Infineon Technologies AG	IRF8313TRPBF Dual N-channel MOSFET Transistor,9.7 A,30 V,8-Pin SOIC RoHS: Compliant	0	4000:$0.6800
IRF8313TRPBF DISTI # 942-IRF8313TRPBF	Infineon Technologies AG	MOSFET MOSFT DUAL NCh 30V 9.7A RoHS: Compliant	16922	1:$0.6700 10:$0.5510 100:$0.3550 1000:$0.2840 4000:$0.2400 8000:$0.2310 24000:$0.2220
IRF8313TRPBF	International Rectifier	9.7 A, 30 V, 0.0155 OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET, MS-012AA	1095	273:$0.5874 69:$0.7343 1:$1.4685
IRF8313TRPBF DISTI # 8273903P	Infineon Technologies AG	HEXFET N-CH MOSFET 9.7A 30V SOIC8, RL	2520	100:£0.2600 500:£0.2350 2000:£0.2060 4000:£0.1740
IRF8313TRPBF DISTI # IRF8313PBF-GURT	Infineon Technologies AG	2xN-Ch 30V 9,7A 2,0W 0,0155R SO8 RoHS: Compliant	2600	50:€0.2460 100:€0.2060 500:€0.1860 2000:€0.1790
IRF8313TRPBF DISTI # XSLY00000000869	INFINEON/IR	SO-8 RoHS: Compliant	4000	4000:$0.2200
IRF8313TRPBF DISTI # C1S322000487013	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R RoHS: Compliant	7975	4000:$0.2400
IRF8313TRPBF DISTI # C1S322000487004	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R RoHS: Compliant	7715	250:$0.3042 100:$0.3051 25:$0.4214 10:$0.4235
IRF8313TRPBF DISTI # 2468027	Infineon Technologies AG	MOSFET, DUAL N CH, 30V, 9.7A, SOIC-8 RoHS: Compliant	2789	5:£0.4370 25:£0.3490 100:£0.2650 250:£0.2530 500:£0.2400
IRF8313TRPBF DISTI # 2468027	Infineon Technologies AG	MOSFET, DUAL N CH, 30V, 9.7A, SOIC-8 RoHS: Compliant	3519	1:$1.0700 10:$0.8720 100:$0.5620 1000:$0.4500 4000:$0.3810 8000:$0.3660 24000:$0.3560
IRF8313TRPBF DISTI # 2468027RL	Infineon Technologies AG	MOSFET, DUAL N CH, 30V, 9.7A, SOIC-8 RoHS: Compliant	0	1:$1.0700 10:$0.8720 100:$0.5620 1000:$0.4500 4000:$0.3810 8000:$0.3660 24000:$0.3560

관련 상품

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	Mfr.#: MCS3264R020FER OMO.#: OMO-MCS3264R020FER-OHMITE	Current Sense Resistors - SMD 2W 0.02 ohm 1%
	Mfr.#: LP2985A-50DBVR OMO.#: OMO-LP2985A-50DBVR-TEXAS-INSTRUMENTS	LDO Voltage Regulators Sgl Output 150mA Fixed(5.0V) Lo Quies
	Mfr.#: ATMEGA328P-AU OMO.#: OMO-ATMEGA328P-AU-MICROCHIP-TECHNOLOGY	Microcontrollers - MCU 8-bit Microcontrollers - MCU 32KB In-system Flash 20MHz 1.8V-5.5V

유효성

재고:: Available
주문 시:: 1991
수량 입력:

IRF8313TRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.66~~; ~~US$0.66~~

10: ~~US$0.55~~; ~~US$5.51~~

100: ~~US$0.36~~; ~~US$35.50~~

1000: ~~US$0.28~~; ~~US$284.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

IRF8313TRP 3
IRF8313T 4
IRF8313 6
IRF831 10
IRF83 76
IRF8 314
IRF 8615

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IRF8313TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes