S29GL01GS11TFI010

S29GL01GS11TFI010
Mfr. #:
S29GL01GS11TFI010
제조사:
Cypress Semiconductor
설명:
NOR Flash 1G 3V 110ns Parallel NOR Flash
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
S29GL01GS11TFI010 데이터 시트
배달:
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지불:
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추가 정보:
S29GL01GS11TFI010 추가 정보 S29GL01GS11TFI010 Product Details
제품 속성
속성 값
제조사:
사이프러스 반도체
제품 카테고리:
NOR 플래시
RoHS:
Y
장착 스타일:
SMD/SMT
패키지/케이스:
TSOP-56
시리즈:
S29GL01G/512/256/128S
메모리 크기:
1 Gbit
인터페이스 유형:
평행 한
조직:
64 M x 16
타이밍 유형:
비동기
데이터 버스 폭:
16 bit
공급 전압 - 최소:
2.7 V
공급 전압 - 최대:
3.6 V
공급 전류 - 최대:
100 mA
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 85 C
포장:
쟁반
메모리 유형:
도 아니다
속도:
110 ns
건축학:
상표:
사이프러스 반도체
습기에 민감한:
상품 유형:
NOR 플래시
공장 팩 수량:
91
하위 카테고리:
메모리 및 데이터 저장
상표명:
미러비트 이클립스
단위 무게:
0.602409 oz
Tags
S29GL01GS11TFI01, S29GL01GS11TFI0, S29GL01GS11TFI, S29GL01GS11T, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Parallel NOR Flash Memory, 1024 Mbit Density, 110 ns Initial Access Time, TSOP-56, RoHS
***ure Electronics
GL-S Series 1G (64M x 16) 3.6 V MirrorBit® Eclipse™ Flash Non-Volatile Memory
***et
NOR Flash Parallel 3V/3.3V 1Gbit 64M x 16bit 110ns 56-Pin TSOP Tray
***ark
MEMORY, FLASH, 1GBIT, 56TSOP; Memory Type:Flash - NOR; Memory Size:1Gbit; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:TSOP; No. of Pins:56; Access Time:110ns; Interface Type:CFI; Operating Temperature Range:-40°C to +85°C; ;RoHS Compliant: Yes
*** Source Electronics
IC FLASH 1GBIT 20NS 48TSOP / SLC NAND Flash Parallel 3.3V 1G-bit 128M x 8 48-Pin TSOP-I Tray
*** Americas
NAND SLC 1Gb , 3.3V , x8 , 2KB page , -40C to +85C , TSOP48 pkg
***DA Technology Co., Ltd.
Product Description Demo for Development.
***el Electronic
IC MUX/DEMUX TRIPLE 2X1 16SOIC
*** Source Electronics
SLC NAND Flash Parallel 3.3V 1G-bit 128M x 8 48-Pin TSOP-I Tray / IC FLASH 1GBIT 20NS 48TSOP
*** Americas
128MX8 NAND FLASH PLASTIC PBF TSOP 3.3V ASYNCH/PAGE READ
***ponent Sense
IC NAND FLASH 48PIN TSOP-MEMORY FLASH
***DA Technology Co., Ltd.
Product Description Demo for Development.
***et
SLC NAND Flash Parallel 3.3V 1Gbit 128M x 8Bit 48-Pin TSOP-I
*** Americas
M68M NAND FLASH 128MX8 PLASTIC TSOP 3.3V MASS STORAGE
***ark
Flash Memory, 1Gbit, -40 To 85Deg C; Flash Memory Type:slc Nand; Memory Size:1Gbit; Flash Memory Configuration:128M X 8Bit; Ic Interface Type:parallel; Memory Case Style:tsop-I; No. Of Pins:48Pins; Clock Frequency:50Mhz Rohs Compliant: Yes
***ure Electronics
MX29LV Series 3 V 32 Mb (4M x 8/2M x 16) 70 ns Parallel Flash - TSOP-48
***ical
NOR Flash Parallel 3V/3.3V 32M-bit 4M x 8/2M x 16 70ns 48-Pin TSOP-I
***nell
FLASH MEMORY, 32MBIT, -40 TO 85DEG C; Flash Memory Type: Parallel NOR; Memory Size: 32Mbit; Flash Memory Configuration: 4M x 8bit / 2M x 16bit; IC Interface Type: CFI, Parallel; Memory Case Style: TSOP; No. of Pins: 48Pins; Clock Frequency: -; Access Time: 70ns; Supply Voltage Min: 2.7V; Supply Voltage Max: 3.6V; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: 3V Parallel NOR Flash Memories
***rochip SCT
Parallel Flash, 2.7 - 3.6 V, 64 Mbit, x16, 70 ns, -40°C to +85°C, TSOP-48, RoHS
***ical
NOR Flash Parallel 3.3V 64M-bit 4M x 16 70ns 48-Pin TSSOP Tray
***et
Flash Parallel 3.3V 64Mbit 4M x 16bit 48-Pin TSOP
MirrorBit® NOR GL Flash Memory Device - EXPANSION
Cypress has expanded it's offering of MirrorBit® NOR GL Flash Memory Devices to include the 100ns access speeds. This additional offering of Cypress MirrorBit® NOR GL Flash Memory now provide the fastest access times in the high-density versions available. MirrorBit® NOR GL Flash Memory Devices are ideal for today's embedded applications that require higher density, better performance, and lower power consumption.Learn MoreCypress MirrorBit® GL NOR Flash family is optimized for the voltage, density, cost-per-bit, reliability, performance, and scalability needs of a wide variety of embedded applications. With densities from 32MB to 2GB, each MirrorBit® NOR GL Flash Memory Device requires only a single 3.0V power supply for read and write functions and is entirely command set compatible with the JEDEC Flash standards. The Cypress MirrorBit® GL Flash Memory Device family supports Cypress' Universal Footprint, which provides one footprint across all densities, product families, and process technologies, allowing manufacturers to design a single platform and simply scale Flash memory capacity up or down, depending on the features and functionality of the target end system.View the entire MirrorBit® NOR GL Series
MirrorBit® NOR GL Flash Memory Device
Cypress MirrorBit® GL NOR Flash family is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MirrorBit® Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set compatible with the JEDEC Flash standards.
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
부분 # 제조 설명 재고 가격
S29GL01GS11TFI010
DISTI # V99:2348_06272074
Cypress SemiconductorS29GL01GS11TFI010**COP-SA
9906
1875918
RoHS: Compliant
55
  • 1001:$7.3360
  • 546:$7.5620
  • 273:$7.5640
  • 182:$7.7280
  • 91:$8.4810
  • 25:$8.5310
  • 10:$8.7160
  • 1:$9.3670
S29GL01GS11TFI010
DISTI # S29GL01GS11TFI010-ND
Cypress SemiconductorIC FLASH 1G PARALLEL 56TSOP
RoHS: Compliant
Min Qty: 1
Container: Tray
416In Stock
  • 1001:$8.0845
  • 546:$8.3632
  • 273:$8.4500
  • 182:$8.8898
  • 91:$10.0978
  • 25:$10.1536
  • 10:$10.3890
  • 1:$11.2200
S29GL01GS11TFI010
DISTI # 31442648
Cypress SemiconductorS29GL01GS11TFI010**COP-SA
9906
1875918
RoHS: Compliant
91
  • 91:$9.8933
S29GL01GS11TFI010
DISTI # 31046364
Cypress SemiconductorS29GL01GS11TFI010**COP-SA
9906
1875918
RoHS: Compliant
55
  • 25:$8.5310
  • 10:$8.7160
  • 1:$9.3670
S29GL01GS11TFI010
DISTI # 39T5700
Cypress SemiconductorFLASH MEMORY, 1024MBIT, 110NS, 56-TSOP,Flash Memory Type:Parallel NOR,Memory Size:1Gbit,Flash Memory Configuration:64M x 16bit,IC Interface Type:Parallel,Memory Case Style:TSOP,No. of Pins:56Pins,Clock Frequency:- RoHS Compliant: Yes1
  • 1:$9.6300
  • 10:$8.9100
  • 25:$8.7100
  • 50:$8.6600
  • 100:$7.8300
  • 250:$7.6500
S29GL01GS11TFI010Spansion 
RoHS: Not Compliant
101
  • 1000:$8.9300
  • 500:$9.4000
  • 100:$9.7900
  • 25:$10.2100
  • 1:$11.0000
S29GL01GS11TFI010
DISTI # 797-S29GL01GS11TFI01
Cypress SemiconductorNOR Flash 1G 3V 110ns Parallel NOR Flash
RoHS: Compliant
88
  • 1:$9.6300
  • 10:$8.9100
  • 25:$8.7100
  • 50:$8.6600
  • 100:$7.8300
  • 250:$7.6500
S29GL01GS11TFI010Cypress SemiconductorGL-S Series 1G (64M x 16) 3.6 V MirrorBit Eclipse Flash Non-Volatile Memory
RoHS: Compliant
172Tray
  • 2:$12.6900
  • 10:$10.2300
  • 25:$9.3900
  • 50:$8.8000
  • 100:$8.2500
S29GL01GS11TFI010
DISTI # 2706065
Cypress SemiconductorFLASH MEMORY, 1024MBIT, 110NS, 56-TSOP
RoHS: Compliant
1
  • 1:$15.2400
  • 10:$14.1100
  • 25:$13.7900
  • 50:$13.7100
  • 100:$12.4400
S29GL01GS11TFI010.
DISTI # 2136246
Cypress SemiconductorMEMORY, FLASH, 1GBIT, 56TSOP
RoHS: Compliant
1
  • 1:$15.2400
  • 10:$14.1100
  • 25:$13.7900
  • 50:$13.7100
  • 100:$12.4400
S29GL01GS11TFI010
DISTI # XSFP00000077465
CYPRESS SEMICONDUCTOR 
RoHS: Compliant
116
  • 91:$16.9200
  • 116:$15.8600
S29GL01GS11TFI010
DISTI # XSKDRABV0032340
CYPRESS SEMICONDUCTOR 
RoHS: Compliant
72
  • 46:$10.9400
  • 72:$10.2100
S29GL01GS11TFI010
DISTI # 2706065
Cypress SemiconductorFLASH MEMORY, 1024MBIT, 110NS, 56-TSOP
RoHS: Compliant
1
  • 100:£6.8900
  • 50:£7.6200
  • 25:£7.6500
  • 10:£7.8300
  • 1:£8.4600
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Mfr.#: TC74VHC14FK(EL,K)

OMO.#: OMO-TC74VHC14FK-EL-K-

Inverters CMOS Logic IC 5.5ns 8mA 2.0 to 5.5V
GTL2003BQ,115

Mfr.#: GTL2003BQ,115

OMO.#: OMO-GTL2003BQ-115

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Mfr.#: TMS320F28377SZWTT

OMO.#: OMO-TMS320F28377SZWTT

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ECS-250-12-33Q-JES-TR

Mfr.#: ECS-250-12-33Q-JES-TR

OMO.#: OMO-ECS-250-12-33Q-JES-TR

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CP2102N-MINIEK

Mfr.#: CP2102N-MINIEK

OMO.#: OMO-CP2102N-MINIEK

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Mfr.#: TMS320F28377SZWTT

OMO.#: OMO-TMS320F28377SZWTT-TEXAS-INSTRUMENTS

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유효성
재고:
111
주문 시:
2094
수량 입력:
S29GL01GS11TFI010의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$9.62
US$9.62
10
US$8.90
US$89.00
25
US$8.70
US$217.50
50
US$8.65
US$432.50
100
US$7.82
US$782.00
250
US$7.65
US$1 912.50
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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