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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSP320SL6327HTSA1 DISTI # BSP320SL6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP320SL6327HTSA1 DISTI # BSP320SL6327HTSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP320SL6327HTSA1 DISTI # BSP320SL6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP320SL6327HTSA1 DISTI # BSP320SL6327HTSA1 | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT-223 - Bulk (Alt: BSP320SL6327HTSA1) RoHS: Compliant Min Qty: 1316 Container: Bulk | Americas - 0 |
|
| BSP320S L6327 DISTI # 726-BSP320SL6327 | Infineon Technologies AG | MOSFET N-Ch 60V 2.9A SOT-223-3 RoHS: Compliant | 0 | |
| BSP320SL6327HTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 87000 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSP320SL6327 OMO.#: OMO-BSP320SL6327-1190 |
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSP320SL6327HTSA1 |
MOSFET N-CH 60V 2.9A SOT-223 |
|
|
Mfr.#: BSP320SL6327HTSA1375 |
신규 및 오리지널 |
|
|
Mfr.#: BSP320SL6433 OMO.#: OMO-BSP320SL6433-1190 |
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP320SL6433HTMA1 |
MOSFET N-CH 60V 2.9A SOT-223 |
