CGHV59350F

CGHV59350F
Mfr. #:
CGHV59350F
제조사:
N/A
설명:
RF JFET Transistors 5.2-5.9GHz 350 Watt Gain typ. 10.5dB GaN
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
CGHV59350F 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
CGHV59350F 추가 정보
제품 속성
속성 값
제조사
울프스피드 / 크리어
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
쟁반
장착 스타일
SMD/SMT
작동 온도 범위
- 40 C to + 85 C
트랜지스터형
헴트
얻다
11 dB
출력 파워
450 W
최대 작동 온도
+ 85 C
최소 작동 온도
- 40 C
동작 주파수
5900 MHz
Vds-드레인-소스-고장-전압
125 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Vgs-Gate-Source-Breakdown-Voltage
- 10 V 2 V
Tags
CGHV59, CGHV5, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 50V 440217
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
부분 # 제조 설명 재고 가격
CGHV59350F
DISTI # CGHV59350F-ND
WolfspeedRF MOSFET HEMT 50V 440217
RoHS: Compliant
Min Qty: 1
Container: Tray
2In Stock
  • 1:$1,249.2800
CGHV59350F-TB
DISTI # CGHV59350F-TB-ND
WolfspeedTEST FIXTURE FOR CGHV59350F
RoHS: Compliant
Min Qty: 1
Container: Bulk
1In Stock
  • 1:$550.0000
CGHV59350F
DISTI # 941-CGHV59350F
Cree, Inc.RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt
RoHS: Compliant
11
  • 1:$1,249.2700
CGHV59350F-TB
DISTI # 941-CGHV59350F-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Compliant
8
  • 1:$550.0000
CGHV59350F
DISTI # CGHV59350F
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$1,249.2700
CGHV59350F-TB
DISTI # CGHV59350F-TB
WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant
1
  • 1:$550.0000
영상 부분 # 설명
CGHV59070F

Mfr.#: CGHV59070F

OMO.#: OMO-CGHV59070F

RF JFET Transistors GaN HEMT 4.4-5.9GHz, 70 Watt
CGHV59350F

Mfr.#: CGHV59350F

OMO.#: OMO-CGHV59350F

RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt
CGHV50200F-AMP

Mfr.#: CGHV50200F-AMP

OMO.#: OMO-CGHV50200F-AMP

RF Development Tools Test Board with GaN HEMT
CGHV50200F

Mfr.#: CGHV50200F

OMO.#: OMO-CGHV50200F-WOLFSPEED

RF MOSFET HEMT 40V 440217
CGHV59070F

Mfr.#: CGHV59070F

OMO.#: OMO-CGHV59070F-WOLFSPEED

RF MOSFET HEMT 50V 440224
CGHV59070F-TB

Mfr.#: CGHV59070F-TB

OMO.#: OMO-CGHV59070F-TB-WOLFSPEED

TEST FIXTURE FOR CGHV59070F
CGHV59350F-TB

Mfr.#: CGHV59350F-TB

OMO.#: OMO-CGHV59350F-TB-WOLFSPEED

TEST FIXTURE FOR CGHV59350F
CGHV50200F-AMP

Mfr.#: CGHV50200F-AMP

OMO.#: OMO-CGHV50200F-AMP-WOLFSPEED

EVAL BOARD FOR CGHV50200
CGHV59070F-AMP

Mfr.#: CGHV59070F-AMP

OMO.#: OMO-CGHV59070F-AMP-WOLFSPEED

EVAL BOARD WITH CGHV59070F
CGHV59350F

Mfr.#: CGHV59350F

OMO.#: OMO-CGHV59350F-WOLFSPEED

RF JFET Transistors 5.2-5.9GHz 350 Watt Gain typ. 10.5dB GaN
유효성
재고:
Available
주문 시:
2500
수량 입력:
CGHV59350F의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.00
US$1.00
10
US$1.00
US$10.00
100
US$1.00
US$100.00
500
US$1.00
US$500.00
1000
US$1.00
US$1 000.00
시작
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