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IPN80R750P7ATMA1

IPN80R750P7ATMA1
Mfr. #:
IPN80R750P7ATMA1
제조사:
Infineon Technologies
설명:
MOSFET LOW POWER_NEW
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPN80R750P7ATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPN80R750P7ATMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
SOT-223-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
800 V
Id - 연속 드레인 전류:
7 A
Rds On - 드레인 소스 저항:
640 mOhms
Vgs th - 게이트 소스 임계 전압:
3.5 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
17 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
7.2 W
구성:
하나의
채널 모드:
상승
포장:
릴
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
20 ns
상품 유형:
MOSFET
상승 시간:
8 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
40 ns
일반적인 켜기 지연 시간:
8 ns
부품 번호 별칭:
IPN80R750P7 SP001665002
Tags
IPN80, IPN8, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS P7 Power Transistor MOSFET 800V 7A 3-Pin PG-SOT223 T/R
***ical
Trans MOSFET N-CH 800V 7A 3-Pin(2+Tab) SOT-223
***ark
MOSFET, N-CH, 800V, 150DEG C, 7.2W ROHS COMPLIANT: YES
***ment14 APAC
场效应管, MOSFET, N沟道, 800V, 150度 C, 7.2W;
***nell
MOSFET, CAN-N, 800V, 150°C, 7.2W;
***ronik
N-CH 800V 7A 750mOhm SOT-223
***ure Electronics
800v, 7a, 0.75 Ohms, SOT223
***i-Key
COOLMOS P7 800V SOT-223
***ineon
Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
부분 # 제조 설명 재고 가격
IPN80R750P7ATMA1
DISTI # V72:2272_19084648		Infineon Technologies AG800V CoolMOS P7 Power Transistor2550
  • 1000:$0.5721
  • 500:$0.7090
  • 250:$0.7925
  • 100:$0.7936
  • 25:$0.9947
  • 10:$0.9968
  • 1:$1.1469
IPN80R750P7ATMA1
DISTI # IPN80R750P7ATMA1CT-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3259In Stock
  • 1000:$0.7433
  • 500:$0.9211
  • 100:$1.1655
  • 10:$1.4550
  • 1:$1.6400
IPN80R750P7ATMA1
DISTI # IPN80R750P7ATMA1DKR-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3259In Stock
  • 1000:$0.7433
  • 500:$0.9211
  • 100:$1.1655
  • 10:$1.4550
  • 1:$1.6400
IPN80R750P7ATMA1
DISTI # IPN80R750P7ATMA1TR-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.6785
IPN80R750P7ATMA1
DISTI # 29709265		Infineon Technologies AG800V CoolMOS P7 Power Transistor3000
  • 30000:$0.4780
  • 18000:$0.4866
  • 12000:$0.5039
  • 6000:$0.5221
  • 3000:$0.5423
IPN80R750P7ATMA1
DISTI # 28955720		Infineon Technologies AG800V CoolMOS P7 Power Transistor2550
  • 1000:$0.6150
  • 500:$0.7622
  • 250:$0.8519
  • 100:$0.8531
  • 25:$1.0693
  • 13:$1.0716
IPN80R750P7ATMA1
DISTI # IPN80R750P7ATMA1		Infineon Technologies AGCoolMOS P7 Power Transistor MOSFET 800V 7A 3-Pin PG-SOT223 T/R - Tape and Reel (Alt: IPN80R750P7ATMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
  • 3000:$0.5649
  • 6000:$0.5439
  • 12000:$0.5249
  • 18000:$0.5069
  • 30000:$0.4979
IPN80R750P7ATMA1
DISTI # SP001665002		Infineon Technologies AGCoolMOS P7 Power Transistor MOSFET 800V 7A 3-Pin PG-SOT223 T/R (Alt: SP001665002)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.8649
  • 6000:€0.7259
  • 12000:€0.6059
  • 18000:€0.5279
  • 30000:€0.4939
IPN80R750P7ATMA1
DISTI # 726-IPN80R750P7ATMA1		Infineon Technologies AGMOSFET LOW POWER_NEW
RoHS: Compliant		3273
  • 1:$1.2800
  • 10:$1.0900
  • 100:$0.8440
  • 500:$0.7460
  • 1000:$0.5890
IPN80R750P7ATMA1
DISTI # IPN80R750P7		Infineon Technologies AGTransistor: N-MOSFET,unipolar,800V,4.6A,7.2W,PG-SOT2232
  • 1:$0.9500
  • 5:$0.8400
  • 20:$0.7500
  • 100:$0.6800
  • 500:$0.6300
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OMO.#: OMO-SQ2364EES-T1-GE3

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OMO.#: OMO-CRCW0603220KFKEAC

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Mfr.#: C0603C224K4NACAUTO

OMO.#: OMO-C0603C224K4NACAUTO

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 16V 0.22uF 0603 X8L 10% AEC-Q200
BCW66FVL

Mfr.#: BCW66FVL

OMO.#: OMO-BCW66FVL-NEXPERIA

 BCW66FSOT23TO-236AB
DTD143ECHZGT116

Mfr.#: DTD143ECHZGT116

OMO.#: OMO-DTD143ECHZGT116-ROHM-SEMI

 500MA/50V DIGITAL TRANSISTOR (WI
IPN80R600P7ATMA1

Mfr.#: IPN80R600P7ATMA1

OMO.#: OMO-IPN80R600P7ATMA1-INFINEON-TECHNOLOGIES

 COOLMOS P7 800V SOT-223
유효성
재고:
Available
주문 시:
1986
수량 입력:
IPN80R750P7ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.28
US$1.28
10
US$1.09
US$10.90
100
US$0.84
US$84.40
500
US$0.75
US$373.00
1000
US$0.59
US$589.00
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