QPD0050TR7

QPD0050TR7
Mfr. #:
QPD0050TR7
제조사:
Qorvo
설명:
RF JFET Transistors DC-3.6GHz GaN 75W 48V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
QPD0050TR7 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
QPD0050TR7 추가 정보
제품 속성
속성 값
제조사:
코르보
제품 카테고리:
RF JFET 트랜지스터
RoHS:
Y
기술:
GaN
얻다:
19.4 dB
출력 파워:
75 W
최소 작동 온도:
- 40 C
장착 스타일:
SMD/SMT
패키지/케이스:
DFN-6
포장:
애플리케이션:
마이크로셀 기지국, W-CDMA / LTE
구성:
하나의
동작 주파수:
DC to 3.6 GHz
시리즈:
QPD
상표:
코르보
습기에 민감한:
상품 유형:
RF JFET 트랜지스터
공장 팩 수량:
250
하위 카테고리:
트랜지스터
부품 번호 별칭:
1132691
Tags
QPD005, QPD0, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
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유효성
재고:
Available
주문 시:
3500
수량 입력:
QPD0050TR7의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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