NGTB40N65IHRTG

Mfr. #:: NGTB40N65IHRTG
제조사:: ON Semiconductor
설명:: IGBT Transistors 650V/40A MONOLITHIC RC IG
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NGTB40N65IHRTG 데이터 시트
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HTML Datasheet:: NGTB40N65IHRTG Datasheet NGTB40N65IHRTG Datasheet (P4-P6)NGTB40N65IHRTG Datasheet (P7-P8)
ECAD Model:
추가 정보:: NGTB40N65IHRTG 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-3P

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 650 V

수집기-이미터 포화 전압:: 1.55 V

25C에서 연속 수집기 전류:: 80 A

Pd - 전력 손실:: 405 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 175 C

포장:: 튜브

상표:: 온세미컨덕터

게이트-이미터 누설 전류:: 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 30

하위 카테고리:: IGBT

단위 무게:: 0.194007 oz

Tags: NGTB40N65I, NGTB40N65, NGTB40N6, NGTB40, NGTB4, NGTB, NGT

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB40N65IHRTG 설명

***Semiconductor: IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A 650 V Monolithic reverse conducting IGBT

***ical: Trans IGBT Chip N-CH 650V 80A 405000mW 3-Pin(3+Tab) TO-3P Tube

***nell: TRANSISTOR, IGBT, 650V, 80A, TO-3P

***ark: Transistor, Igbt, 650V, 80A, To-3P; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:405W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-3P; No. Of Pins:3Pins; Rohs Compliant: Yes

NGTB40N65IHRTG 추가 정보

NGTB 25-75A Insulated Gate Bipolar Transistors: ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More

Market price

부분 #	제조	설명	재고	가격
NGTB40N65IHRTG DISTI # V36:1790_18357508	ON Semiconductor	650V/40A MONOLITHIC RC IG	0
NGTB40N65IHRTG DISTI # V99:2348_18357508	ON Semiconductor	650V/40A MONOLITHIC RC IG	0
NGTB40N65IHRTG DISTI # NGTB40N65IHRTGOS-ND	ON Semiconductor	650V/40A RC IGBT RoHS: Compliant Min Qty: 1 Container: Tube	85In Stock	30:$2.5727 10:$2.8810 1:$3.1900
NGTB40N65IHRTG DISTI # 31AC6710	ON Semiconductor	TRANSISTOR, IGBT, 650V, 80A, TO-3P,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:405W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-3P,No. of Pins:3Pins,RoHS Compliant: Yes	0
NGTB40N65IHRTG DISTI # 863-NGTB40N65IHRTG	ON Semiconductor	IGBT Transistors 650V/40A MONOLITHIC RC IG RoHS: Compliant	96	1:$2.8800 10:$2.4500 100:$1.9600 500:$1.7100 1000:$1.4200 2500:$1.3200 5000:$1.2700
NGTB40N65IHRTG DISTI # 1718330	ON Semiconductor	IGBT MONOLITHIC REVERSE CONDUCTING DIODE, TU	130	60:£0.9900 30:£1.0610
NGTB40N65IHRTG DISTI # 2775437	ON Semiconductor	TRANSISTOR, IGBT, 650V, 80A, TO-3P RoHS: Compliant	0	1000:$2.1900 500:$2.4200 250:$2.7600 100:$3.0600 10:$3.5300 1:$4.0500
NGTB40N65IHRTG	ON Semiconductor	650V,40A,IGBT Monolithic with Reverse Conducting Diode	10050	1:$2.5400 100:$1.9100 500:$1.6300 1000:$1.5300

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