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IRF7379TRPBF

IRF7379TRPBF
Mfr. #:
IRF7379TRPBF
제조사:
Infineon Technologies
설명:
MOSFET MOSFT DUAL N/PCh 30V 5.8A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF7379TRPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7379TRPBF DatasheetIRF7379TRPBF Datasheet (P4-P6)IRF7379TRPBF Datasheet (P7-P9)IRF7379TRPBF Datasheet (P10)
ECAD Model:
추가 정보:
IRF7379TRPBF 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
SO-8
채널 수:
2 Channel
트랜지스터 극성:
N-채널, P-채널
Vds - 드레인 소스 항복 전압:
30 V
Id - 연속 드레인 전류:
5.8 A
Rds On - 드레인 소스 저항:
75 mOhms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
16.7 nC
Pd - 전력 손실:
2.5 W
구성:
듀얼
포장:
릴
키:
1.75 mm
길이:
4.9 mm
트랜지스터 유형:
1 N-Channel, 1 P-Channel
너비:
3.9 mm
상표:
인피니언 테크놀로지스
상품 유형:
MOSFET
공장 팩 수량:
4000
하위 카테고리:
MOSFET
부품 번호 별칭:
SP001571968
단위 무게:
0.019048 oz
Tags
IRF7379, IRF737, IRF73, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IRF7379 Series 30 V 0.045 Ohm N and P-Channel HEXFET® Power MOSFET - SOIC-8
***et
Trans MOSFET N/P-CH 30V 5.8A/4.3A 8-Pin SOIC T/R
***ineon SCT
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.8A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***et
Trans MOSFET N-CH 30V 4.9A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET, DUAL N-CHANNEL, 30V, 4.9A, SO-8, Q101 QUALIFIED
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:4.9A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes
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MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.07Ohm; ID -4.6A; SO-8; PD 2.5W; VGS +/-20V
*** Source Electronics
Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC
***eco
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Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
***ter Electronics
MOSFET, P-CHANNEL, -30V, -4.6A, 70 MOHM, 27 NC QG, SO-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
P CHANNEL MOSFET, -30V, 4.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
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Dual N/P-Channel 30 V 2.1 W 12.9/12.7 nC Silicon Surface Mount Mosfet - SOIC-8
***des Inc SCT
30V SO8 Complementary dual enhancement mode MOSFET, N+P, 30V VDS, 20±V VGS
***et
Trans MOSFET N/P-CH 30V 7.3A/5.3A 8-Pin SO T/R
***ark
Mosfet, Dual, N/p-Ch, 30V, 7.3A Rohs Compliant: Yes
***ronik
CMOS 30V 7,3/5,3A 24mOhm SO-8 RoHSconf
***ment14 APAC
MOSFET, DUAL, N/P-CH, 30V, 7.3A;
***et
Trans MOSFET P-CH 30V 4.9A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET, DUAL P-CHANNEL, -30V, 4.9A, SO-8, HALOGEN-FREE
*** Electronic Components
IGBT Transistors MOSFET MOSFT DUAL PCh -30V 4.9A
***S
French Electronic Distributor since 1988
***ark
DUAL P CH MOSFET, -30V, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes
***et Japan
Transistor MOSFET Array Dual P-CH 30V 4.9A 8-Pin SOIC T/R
***des Inc SCT
Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***nell
MOSFET, DUAL P-CH, -30V, -3.9A, SOIC; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -3.9A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 1.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
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MOSFET P-Ch 30V 3.9A Enhancement SOIC8
***ical
Trans MOSFET P-CH 30V 3.9A Automotive 8-Pin SO T/R
***ronik
Dual P-CH -30V -3,9A 70mOhm SO8
***(Formerly Allied Electronics)
MOSFET P-Ch 30V 3.8A Enhancement SOIC8
***et
Trans MOSFET P-CH 30V 3.8A 8-Pin SO T/R
***ark
Mosfet, P-Ch, 30V, 3.8A, Soic Rohs Compliant: Yes
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
부분 # 제조 설명 재고 가격
IRF7379TRPBF
DISTI # IRF7379PBFCT-ND		Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3018In Stock
  • 1000:$0.4305
  • 500:$0.5382
  • 100:$0.7266
  • 10:$0.9420
  • 1:$1.0800
IRF7379TRPBF
DISTI # IRF7379PBFDKR-ND		Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3018In Stock
  • 1000:$0.4305
  • 500:$0.5382
  • 100:$0.7266
  • 10:$0.9420
  • 1:$1.0800
IRF7379TRPBF
DISTI # IRF7379PBFTR-ND		Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.3788
IRF7379TRPBF
DISTI # IRF7379TRPBF		Infineon Technologies AGTrans MOSFET N/P-CH 30V 5.8A/4.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7379TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.2729
  • 8000:$0.2629
  • 16000:$0.2539
  • 24000:$0.2449
  • 40000:$0.2409
IRF7379TRPBF
DISTI # 34AC1779		Infineon Technologies AGMOSFET, N & P-CH, 30V, 5.8A, SOIC,Transistor Polarity:N and P Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes3390
  • 1:$0.8900
  • 10:$0.7370
  • 25:$0.6500
  • 50:$0.5620
  • 100:$0.4750
  • 250:$0.4430
  • 500:$0.4120
  • 1000:$0.3800
IRF7379TRPBF
DISTI # 70018897		Infineon Technologies AGMOSFET,DUAL N/P-CHANNEL,30V,5.8A,SO-8
RoHS: Compliant		0
  • 4000:$1.2600
  • 8000:$1.2350
  • 20000:$1.1970
  • 40000:$1.1470
  • 100000:$1.0710
IRF7379TRPBF
DISTI # 942-IRF7379TRPBF		Infineon Technologies AGMOSFET MOSFT DUAL N/PCh 30V 5.8A
RoHS: Compliant		3835
  • 1:$0.8900
  • 10:$0.7370
  • 100:$0.4750
  • 1000:$0.3800
  • 4000:$0.3210
  • 8000:$0.3090
  • 24000:$0.2970
IRF7379TRPBF
DISTI # 2781211		Infineon Technologies AGMOSFET, N & P-CH, 30V, 5.8A, SOIC
RoHS: Compliant		3390
  • 5:$1.2300
  • 25:$1.0700
  • 100:$0.8750
  • 250:$0.7390
  • 500:$0.6400
  • 1000:$0.6050
  • 5000:$0.5730
IRF7379TRPBF
DISTI # 2781211		Infineon Technologies AGMOSFET, N & P-CH, 30V, 5.8A, SOIC
RoHS: Compliant		3390
  • 5:£0.8360
  • 25:£0.7520
  • 100:£0.5790
  • 250:£0.5040
  • 500:£0.4290
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OMO.#: OMO-MIC4426YM-MICROCHIP-TECHNOLOGY

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REF3030AIDBZR

Mfr.#: REF3030AIDBZR

OMO.#: OMO-REF3030AIDBZR-TEXAS-INSTRUMENTS

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OMO.#: OMO-RC0402JR-13330RL-433

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유효성
재고:
Available
주문 시:
1987
수량 입력:
IRF7379TRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.89
US$0.89
10
US$0.74
US$7.37
100
US$0.48
US$47.50
1000
US$0.38
US$380.00
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