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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI7810DN-T1-E3 DISTI # V72:2272_09216384 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 1300 |
|
| SI7810DN-T1-E3 DISTI # V36:1790_09216384 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 0 |
|
| SI7810DN-T1-GE3 DISTI # V36:1790_09216385 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 0 |
|
| SI7810DN-T1-E3 DISTI # SI7810DN-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 100V 3.4A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 23370In Stock |
|
| SI7810DN-T1-E3 DISTI # SI7810DN-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 100V 3.4A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 23370In Stock |
|
| SI7810DN-T1-E3 DISTI # SI7810DN-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 3.4A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 21000In Stock |
|
| SI7810DN-T1-GE3 DISTI # SI7810DN-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 100V 3.4A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2160In Stock |
|
| SI7810DN-T1-GE3 DISTI # SI7810DN-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 100V 3.4A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2160In Stock |
|
| SI7810DN-T1-GE3 DISTI # SI7810DN-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 3.4A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI7810DN-T1-GE3 DISTI # 32141337 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 3000 |
|
| SI7810DN-T1-E3 DISTI # 31920005 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 1300 |
|
| SI7810DN-T1-E3 DISTI # SI7810DN-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R - Cut TR (SOS) (Alt: SI7810DN-T1-E3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape | Americas - 25 |
|
| SI7810DN-T1-E3 DISTI # SI7810DN-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7810DN-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI7810DN-T1-GE3 DISTI # SI7810DN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7810DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI7810DN-T1-GE3 DISTI # SI7810DN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R (Alt: SI7810DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SI7810DN-T1-E3. DISTI # 28AC2176 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.052ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power Dissipation Pd:3.8mW,No. of Pins:8Pins RoHS Compliant: No | 0 |
|
| SI7810DN-T1-E3 DISTI # 06J8165 | Vishay Intertechnologies | N CHANNEL MOSFET, 100V, 3.4A, POWERPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.084ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V RoHS Compliant: Yes | 0 |
|
| SI7810DN-T1-E3 DISTI # 70026075 | Vishay Siliconix | MOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.052Ohm,ID 3.4A,PowerPAK 1212-8,PD 1.5W RoHS: Compliant | 0 |
|
| SI7810DN-T1-GE3 | Vishay Intertechnologies | Single N-Channel 100 V 1.5 W 17 nC Silicon SMT Mosfet - POWERPAK-1212-8 RoHS: Not Compliant | 3000Reel |
|
| SI7810DN-T1-GE3 DISTI # 781-SI7810DN-GE3 | Vishay Intertechnologies | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 2994 |
|
| SI7810DN-T1-E3 DISTI # 781-SI7810DN-T1-E3 | Vishay Intertechnologies | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 5713 |
|
| SI7810DN-T1-E3 | Vishay Intertechnologies | 381 | ||
| SI7810DN-T1 | Vishay Intertechnologies | 2390 |
| |
| SI7810DN-T1-E3 | Vishay Intertechnologies | POWER FIELD-EFFECT TRANSISTOR, 3.4A I(D), 100V, 0.062OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2065 |
|
| SI7810DNT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 3.4A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| SI7810DN-T1-GE3 DISTI # XSFT00000033909 | Vishay Siliconix | RoHS: Compliant | 6000 in Stock0 on Order |
|
| SI7810DN-T1-GE3 | Vishay Intertechnologies | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | Americas - 12000 |
|
| SI7810DN-T1-E3 | Vishay Intertechnologies | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | Americas - |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SI7862ADP-T1-GE3 OMO.#: OMO-SI7862ADP-T1-GE3 |
MOSFET 16V 29A 5.4W 3.0mohm @ 4.5V |
|
|
Mfr.#: SI7860DP-T1-E3 OMO.#: OMO-SI7860DP-T1-E3 |
MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3 |
|
Mfr.#: SI7868ADP-T1-GE3 OMO.#: OMO-SI7868ADP-T1-GE3-VISHAY |
MOSFET 20V 40A 83W 2.25mohm @ 10V |
|
Mfr.#: SI7880ADP-T1-E3-CUT TAPE |
신규 및 오리지널 |
|
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Mfr.#: SI7812DN OMO.#: OMO-SI7812DN-1190 |
신규 및 오리지널 |
|
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Mfr.#: SI7860DP-T1-E3 OMO.#: OMO-SI7860DP-T1-E3-VISHAY |
MOSFET N-CH 30V 11A PPAK SO-8 |
|
|
Mfr.#: SI7880 OMO.#: OMO-SI7880-1190 |
신규 및 오리지널 |
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Mfr.#: SI7880ADP- OMO.#: OMO-SI7880ADP--1190 |
신규 및 오리지널 |
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Mfr.#: SI7880DP-T1-E3 OMO.#: OMO-SI7880DP-T1-E3-1190 |
신규 및 오리지널 |
|
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Mfr.#: SI786DSG-T1 OMO.#: OMO-SI786DSG-T1-341 |
Switching Controllers Dual 3.6V Step-Down |