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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI4914BDY-T1-GE3 DISTI # SI4914BDY-T1-GE3TR-ND | Vishay Siliconix | MOSFET 2N-CH 30V 8.4A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI4914BDY-T1-GE3 DISTI # SI4914BDY-T1-GE3CT-ND | Vishay Siliconix | MOSFET 2N-CH 30V 8.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI4914BDY-T1-GE3 DISTI # SI4914BDY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET 2N-CH 30V 8.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI4914BDY-T1-E3 DISTI # SI4914BDY-T1-E3-ND | Vishay Siliconix | MOSFET 2N-CH 30V 8.4A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI4914BDY-T1-GE3 DISTI # 70616978 | Vishay Siliconix | SI4914BDY-T1-GE3 Dual N-channel MOSFET Transistor,6.7 A,7.4 A,30V,8-Pin SOIC RoHS: Compliant | 0 |
|
| SI4914BDY-T1-GE3 DISTI # 781-SI4914BDY-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3 RoHS: Compliant | 4000 |
|
| SI4914BDY-T1-E3 DISTI # 781-SI4914BDY-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3 RoHS: Compliant | 0 | |
| SI4914BDY-T1-GE3 DISTI # 8181306P | Vishay Intertechnologies | TRANS MOSFET N-CH 30V 6.7A/7.4AN, RL | 8320 |
|
| SI4914BDY-T1-GE3 | Vishay Intertechnologies | 1795 | ||
| SI4914BDY-T1-E3 | Vishay Intertechnologies | 5258 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SI4900DY-T1-GE3 OMO.#: OMO-SI4900DY-T1-GE3 |
MOSFET 60V 5.3A 3.1W 58mohm @ 10V |
|
|
Mfr.#: SI4967DY-T1-GE3 OMO.#: OMO-SI4967DY-T1-GE3 |
MOSFET RECOMMENDED ALT 781-SI9933CDY-T1-GE3 |
|
Mfr.#: SI4943CDY-T1-E3 OMO.#: OMO-SI4943CDY-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 20V 8.0A 3.1W 19.2mohm @ 10V |
|
Mfr.#: SI4920DY-T1 OMO.#: OMO-SI4920DY-T1-1190 |
MOSFET 30V 6.9A 2W |
|
|
Mfr.#: SI4946BEY-T1-GE3 OMO.#: OMO-SI4946BEY-T1-GE3-VISHAY |
MOSFET 2N-CH 60V 6.5A 8-SOIC |
|
|
Mfr.#: SI4947DY-T1-E3 OMO.#: OMO-SI4947DY-T1-E3-1190 |
MOSFET RECOMMENDED ALT 781-SI4925DDY-GE3 |
|
|
Mfr.#: SI4966DYT1 OMO.#: OMO-SI4966DYT1-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI4980DY-T1-E3 OMO.#: OMO-SI4980DY-T1-E3-1190 |
Transistor Polarity:Dual N Channel, Continuous Drain Current Id:3.7A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.062ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power |
|
|
Mfr.#: SI4982 OMO.#: OMO-SI4982-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI4982DY-T1-E3 OMO.#: OMO-SI4982DY-T1-E3-1190 |
Transistor Polarity:Dual N Channel, Continuous Drain Current Id:2.6A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.13ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power |