HGTG27N120BN

Mfr. #:: HGTG27N120BN
제조사:: ON Semiconductor
설명:: IGBT 1200V 72A 500W TO247
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: HGTG27N120BN 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 페어차일드 반도체

제품 카테고리: IGBT - 싱글

시리즈: -

포장: 튜브

패키지 케이스: TO-247-3

입력 유형: 기준

장착형: 구멍을 통해

공급자-장치-패키지: TO-247

파워맥스: 500W

역복구-시간-trr: -

전류 수집기 Ic-Max: 72A

Voltage-Collector-Emitter-Breakdown-Max: 1200V

IGBT형: NPT

전류 수집기 펄스 Icm: 216A

Vce-on-Max-Vge-Ic: 2.7V @ 15V, 27A

스위칭 에너지: 2.2mJ (on), 2.3mJ (off)

게이트 차지: 270nC

Td-on-off-25°C: 24ns/195ns

시험조건: 960V, 27A, 3 Ohm, 15V

Tags: HGTG27N120BN, HGTG27N1, HGTG27, HGTG2, HGTG, HGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG27N120BN 설명

***ical: Trans IGBT Chip N-CH 1200V 72A 500000mW 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: HGTG27N120BN 72 A 1200 V NPT Series N-Channel IGBT - TO-247-3

***eco: Transistor HGTG27N120 IGBT N-Channel 1.2kVolt 72Amp TO-247

***p One Stop Japan: Trans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail

***ser: IGBTs 72A, 1200V, NPT Series N-Ch IGBT

***et: PWR IGBT 56A 1200V NPT N-CHANNEL TO-247

***ark: Nptpigbt To247 56A 1200V Rohs Compliant: Yes

***th Star Micro: IGBT NPT N-CH 1200V 72A TO-247

***Semiconductor: 1200V, NPT IGBT

***rchild Semiconductor: HGTG27N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

***nell: IGBT, N 72A, 1200V TO-247; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:72A; Voltage, Vce Sat Max:2.7V; Power Dissipation:500W; Case Style:TO-247; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; No. of Pins:3

***ment14 APAC: IGBT, N 72A, 1200V TO-247; Transistor Type:IGBT; DC Collector Current:72A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:72A; Package / Case:TO-247; Power Dissipation Max:500W; Power Dissipation Pd:500W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

Market price

부분 #	제조	설명	재고	가격
HGTG27N120BN DISTI # HGTG27N120BN-ND	ON Semiconductor	IGBT 1200V 72A 500W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	450In Stock	1350:$3.6143 900:$4.2855 450:$4.7760 10:$6.1440 1:$6.8400
HGTG27N120BN DISTI # HGTG27N120BN	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG27N120BN) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$2.7900 10:$2.7900 25:$2.7900 50:$2.6900 100:$2.6900 500:$2.6900 1000:$2.6900
HGTG27N120BN DISTI # HGTG27N120BN	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG27N120BN) RoHS: Compliant Min Qty: 450	Asia - 0
HGTG27N120BN DISTI # HGTG27N120BN	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG27N120BN) RoHS: Compliant Min Qty: 1	Europe - 0	1:€3.4900 10:€3.1900 25:€3.0900 50:€2.9900 100:€2.8900 500:€2.7900 1000:€2.5900
HGTG27N120BN DISTI # 58K1590	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1590) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$7.5200 10:$6.7500 25:$6.4600 50:$6.1600 100:$5.8500 250:$5.5600 500:$5.2600
HGTG27N120BN DISTI # 61M6561	ON Semiconductor	IGBT Single Transistor, 72 A, 2.7 V, 500 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes	688	1:$6.3900 10:$5.5300 25:$4.8400 50:$4.5400 100:$3.9300 250:$3.3000 500:$3.2000
HGTG27N120BN DISTI # 58K1590	ON Semiconductor	IGBT, N 72A, 1200V TO-247,DC Collector Current:72A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	402	1:$7.7500 10:$6.9800 25:$6.6900 50:$6.3900 100:$6.0800 250:$5.7900 500:$5.4900
HGTG27N120BN. DISTI # 27AC6331	Fairchild Semiconductor Corporation	NPTPIGBT TO247 56A 1200V ROHS COMPLIANT: YES	0	1:$7.6700 10:$6.8900 25:$6.5900 50:$6.1600 100:$5.8500 250:$5.5600 500:$5.2600
HGTG27N120BN	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	7160	1000:$4.5500 500:$4.7900 100:$4.9900 25:$5.2000 1:$5.6000
HGTG27N120BN DISTI # 512-HGTG27N120BN	ON Semiconductor	IGBT Transistors 72A 1200V NPT Series N-Ch IGBT RoHS: Compliant	0
HGTG27N120BN DISTI # 1470994	ON Semiconductor	IGBT, N 72A, 1200V TO-247 RoHS: Compliant	1090	1:$10.8300 10:$9.7300 450:$7.5600 900:$6.7900 1350:$5.7200
HGTG27N120BN DISTI # 1470994	ON Semiconductor	IGBT, N 72A, 1200V TO-247 RoHS: Compliant	1113	1:£6.4500 10:£4.7400 100:£4.2200 250:£3.6900 500:£3.3000

영상	부분 #	설명
	Mfr.#: HGTG27N120BN OMO.#: OMO-HGTG27N120BN	IGBT Transistors 72A 1200V NPT Series N-Ch IGBT
	Mfr.#: HGTG27N120BG OMO.#: OMO-HGTG27N120BG-1190	신규 및 오리지널
	Mfr.#: HGTG27N120BN OMO.#: OMO-HGTG27N120BN-ON-SEMICONDUCTOR	IGBT 1200V 72A 500W TO247
	Mfr.#: HGTG27N120BN G27N120BN OMO.#: OMO-HGTG27N120BN-G27N120BN-1190	신규 및 오리지널
	Mfr.#: HGTG27N120BN(72A1200V) OMO.#: OMO-HGTG27N120BN-72A1200V--1190	신규 및 오리지널
	Mfr.#: HGTG27N120BND OMO.#: OMO-HGTG27N120BND-1190	신규 및 오리지널
	Mfr.#: HGTG27N60C3R OMO.#: OMO-HGTG27N60C3R-1190	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247

HGTG27N120BN

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes