IPAN80R360P7XKSA1

Mfr. #:: IPAN80R360P7XKSA1
제조사:: Infineon Technologies
설명:: MOSFET N-CHANNEL 800V 13A TO220
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPAN80R360P7XKSA1 데이터 시트
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추가 정보:: IPAN80R360P7XKSA1 추가 정보

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Tags: IPAN8, IPAN, IPA

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPAN80R360P7XKSA1 설명

***ure Electronics: Single N-Channel 800 V 360 mOhm 30 nC CoolMOS Power Mosfet - TO-220-3FP

***i-Key: MOSFET N-CHANNEL 800V 13A TO220

***et Europe: LOW POWER_NEW

***ark: Mosfet, N-Ch, 800V, 13A, 30W, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.31Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 800V, 13A, 30W, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.31ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:30W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CAN N, 800V, 13A, 30W, TO-220FP; Polarità Transistor:Canale N; Corrente Continua di Drain Id:13A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.31ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:30W; Modello Case Transistor:TO-220FP; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: 800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power

IPAN80R360P7XKSA1 추가 정보

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

800V CoolMOS P7 MOSFETs: Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

Market price

부분 #	제조	설명	재고	가격
IPAN80R360P7XKSA1 DISTI # IPAN80R360P7XKSA1-ND	Infineon Technologies AG	MOSFET N-CHANNEL 800V 13A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	25In Stock	1000:$1.4319 500:$1.6967 100:$2.1378 10:$2.6230 1:$2.8900
IPAN80R360P7XKSA1 DISTI # SP001702158	Infineon Technologies AG	LOW POWER_NEW (Alt: SP001702158) RoHS: Compliant Min Qty: 1	Europe - 490	1:€1.3359 10:€1.2139 25:€1.1129 50:€1.0679 100:€1.0269 500:€0.9889 1000:€0.9539
IPAN80R360P7XKSA1 DISTI # IPAN80R360P7XKSA1	Infineon Technologies AG	LOW POWER_NEW - Rail/Tube (Alt: IPAN80R360P7XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$1.1549 1000:$1.1139 2000:$1.0729 3000:$1.0369 5000:$1.0189
IPAN80R360P7XKSA1 DISTI # 93AC7082	Infineon Technologies AG	MOSFET, N-CH, 800V, 13A, 30W, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.31ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	500	1000:$0.9280 500:$1.1200 100:$1.2800 10:$1.6000 1:$1.8900
IPAN80R360P7XKSA1 DISTI # 726-IPAN80R360P7XKS	Infineon Technologies AG	MOSFET LOW POWER_NEW RoHS: Compliant	0	1:$2.3600 10:$2.0000 100:$1.6000 500:$1.4000 1000:$1.1600
IPAN80R360P7XKSA1 DISTI # 2986355	Infineon Technologies AG	MOSFET, N-CH, 800V, 13A, 30W, TO-220FP RoHS: Compliant	500	1000:$1.6300 500:$1.9200 250:$2.0900 100:$2.2200 10:$2.6600 1:$3.4600
IPAN80R360P7XKSA1 DISTI # 2986355	Infineon Technologies AG	MOSFET, N-CH, 800V, 13A, 30W, TO-220FP RoHS: Compliant	500	500:£1.0800 250:£1.1800 100:£1.2500 10:£1.5000 1:£1.9500
IPAN80R360P7XKSA1 DISTI # XSKDRABV0033027	Infineon Technologies AG	RoHS: Compliant	400 in Stock0 on Order	400:$1.6800 278:$1.8000

IPAN80R360P7XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes