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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SKM 400 GAL 125 D DISTI # 88K1208 | SEMIKRON | IGBT MODULE, 1.2KV, 400A, SEMITRANS 3,Transistor Polarity:N Channel,DC Collector Current:400A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:5Pins RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SKM400GAL125D DISTI # 70098223 | SEMIKRON | IGBT,Ultra Fast,IGBT,1200 V,400 A @degC,20 V,390 A @ 25 degC,-40 RoHS: Not Compliant | 0 |
|
| SKM400GAL125D | SEMIKRON | Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | Europe - 3 |
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: SKM400GA102D OMO.#: OMO-SKM400GA102D-1190 |
신규 및 오리지널 |
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Mfr.#: SKM400GA123D H4 OMO.#: OMO-SKM400GA123D-H4-1190 |
신규 및 오리지널 |
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Mfr.#: SKM400GA124D OMO.#: OMO-SKM400GA124D-1190 |
신규 및 오리지널 |
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Mfr.#: SKM400GA126DH14 OMO.#: OMO-SKM400GA126DH14-1190 |
신규 및 오리지널 |
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Mfr.#: SKM400GA128D OMO.#: OMO-SKM400GA128D-1190 |
신규 및 오리지널 |
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Mfr.#: SKM400GA12E4 OMO.#: OMO-SKM400GA12E4-1190 |
IGBT MODULE, SINGLE, 1.2KV, 616A, Transistor Polarity:NPN, DC Collector Current:616A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo |
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Mfr.#: SKM400GAL125D OMO.#: OMO-SKM400GAL125D-1190 |
IGBT, Ultra Fast, IGBT, 1200 V, 400 A @ degC, 20 V, 390 A @ 25 degC, -40 |
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Mfr.#: SKM400GAL176D OMO.#: OMO-SKM400GAL176D-1190 |
Insulated Gate Bipolar Transistor, 430A I(C), 1700V V(BR)CES, N-Channel |
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Mfr.#: SKM400GB126D OMO.#: OMO-SKM400GB126D-1190 |
IGBT, 1 V (Typ.) @ degC VCE, 470 A @ degC, 400 A @ degC, 50 ns |
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Mfr.#: SKM400GB128DE OMO.#: OMO-SKM400GB128DE-1190 |
신규 및 오리지널 |