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IXTH30N50P

IXTH30N50P
Mfr. #:
IXTH30N50P
제조사:
Littelfuse
설명:
MOSFET 30.0 Amps 500 V 0.2 Ohm Rds
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXTH30N50P 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTH30N50P DatasheetIXTH30N50P Datasheet (P4-P5)
ECAD Model:
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
500 V
Id - 연속 드레인 전류:
30 A
Rds On - 드레인 소스 저항:
165 mOhms
Vgs th - 게이트 소스 임계 전압:
5 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
70 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
460 W
구성:
하나의
채널 모드:
상승
상표명:
극지HV
포장:
튜브
키:
21.46 mm
길이:
16.26 mm
시리즈:
IXTH30N50
트랜지스터 유형:
1 N-Channel
유형:
PolarHV 전력 MOSFET
너비:
5.3 mm
상표:
익시스
순방향 트랜스컨덕턴스 - 최소:
17 S
가을 시간:
21 ns
상품 유형:
MOSFET
상승 시간:
27 ns
공장 팩 수량:
30
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
75 ns
일반적인 켜기 지연 시간:
25 ns
단위 무게:
0.229281 oz
Tags
IXTH30N5, IXTH30N, IXTH30, IXTH3, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
Trans MOSFET N-CH 500V 30A 3-Pin (3+Tab) TO-247AD
***i-Key
MOSFET N-CH 500V 30A TO247
***el Nordic
Contact for details
***p One Stop Global
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Tube
***i-Key
MOSFET N-CH 600V 25A TO247
***S
French Electronic Distributor since 1988
***el Electronic
IC SUPERVISOR
***icroelectronics
N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
***ure Electronics
N-Channel 600 V 0.175 Ohm Flange Mount Power Mosfet - TO-247
***r Electronics
Power Field-Effect Transistor, 21A I(D), 600V, 0.175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 22A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
***ical
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Magazine
***
POWER MOSFET TRANSISTOR
***i-Key
MOSFET N-CH 600V 25A TO247
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 24 A, 150 mΩ, TO-247
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), N-Channel, Metal-oxide Semiconductor FET
***nell
SUPERFET2 650V, 150 MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.133ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-247
***roFlash
Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
SUPERFET2 104MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissi
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
부분 # 제조 설명 재고 가격
IXTH30N50P
DISTI # IXTH30N50P-ND		IXYS CorporationMOSFET N-CH 500V 30A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.6377
IXTH30N50P
DISTI # 747-IXTH30N50P		IXYS CorporationMOSFET 30.0 Amps 500 V 0.2 Ohm Rds
RoHS: Compliant		0
  • 1:$8.0400
  • 10:$7.1900
  • 25:$6.2500
  • 50:$6.1300
  • 100:$5.8900
  • 250:$5.0300
  • 500:$4.7700
  • 1000:$4.0300
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유효성
재고:
100
주문 시:
2083
수량 입력:
IXTH30N50P의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$8.04
US$8.04
10
US$7.19
US$71.90
25
US$6.25
US$156.25
50
US$6.13
US$306.50
100
US$5.89
US$589.00
250
US$5.03
US$1 257.50
500
US$4.77
US$2 385.00
1000
US$4.03
US$4 030.00
2500
US$3.45
US$8 625.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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