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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IPB35N10S3L26ATMA1 DISTI # V72:2272_06384799 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 858 |
|
| IPB35N10S3L26ATMA1 DISTI # IPB35N10S3L26ATMA1-ND | Infineon Technologies AG | MOSFET N-CH TO263-3 Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPB35N10S3L26ATMA1 DISTI # 33079428 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1000 |
|
| IPB35N10S3L26ATMA1 DISTI # 26195596 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 858 |
|
| IPB35N10S3L26ATMA1 DISTI # IPB35N10S3L26ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB35N10S3L26ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB35N10S3L26ATMA1 DISTI # SP000776044 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-263 (Alt: SP000776044) Min Qty: 1000 | Europe - 0 |
|
| IPB35N10S3L26ATMA1 DISTI # 34AC1657 | Infineon Technologies AG | MOSFET, AEC-Q101, N-CH, 100V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0203ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes RoHS: Compliant | 1789 |
|
| IPB35N10S3L-26 DISTI # 726-IPB35N10S3L-26 | Infineon Technologies AG | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T RoHS: Compliant | 964 |
|
| IPB35N10S3L26ATMA1 DISTI # 726-IPB35N10S3L26ATM | Infineon Technologies AG | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T RoHS: Compliant | 1377 |
|
| IPB35N10S3L26ATMA1 DISTI # 8578671 | Infineon Technologies AG | On a Reel of 1000, IPB35N10S3L26ATMA1 N-Channel MOSFET, 35 A, 100 V OptiMOS T, 3-Pin D2PAK Infineon, RL Min Qty: 1000 Container: Reel | 0 |
|
| IPB35N10S3L26ATMA1 DISTI # 2781070 | Infineon Technologies AG | MOSFET, AEC-Q101, N-CH, 100V, TO-263 RoHS: Compliant | 1989 |
|
| IPB35N10S3L26ATMA1 DISTI # 2781070RL | Infineon Technologies AG | MOSFET, AEC-Q101, N-CH, 100V, TO-263 RoHS: Compliant | 0 |
|
| IPB35N10S3L26ATMA1 DISTI # 2781070 | Infineon Technologies AG | MOSFET, AEC-Q101, N-CH, 100V, TO-263 RoHS: Compliant | 1839 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: IPB35N10S3L-26 OMO.#: OMO-IPB35N10S3L-26 |
MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T |
|
|
Mfr.#: IPB35N12S3L26ATMA1 OMO.#: OMO-IPB35N12S3L26ATMA1 |
MOSFET N-CHANNEL 100+ |
|
Mfr.#: IPB35N10S3L26ATMA1 |
MOSFET N-CH TO263-3 |
|
Mfr.#: IPB35N12S3L26ATMA1 |
MOSFET N-CHANNEL_100+ |
|
|
Mfr.#: IPB35CN10NG OMO.#: OMO-IPB35CN10NG-1190 |
신규 및 오리지널 |
|
|
Mfr.#: IPB35N10S3L-26 OMO.#: OMO-IPB35N10S3L-26-1190 |
MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T |
|
|
Mfr.#: IPB35N10S3L-26(3N10L26) |
신규 및 오리지널 |