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IRFSL7540PBF

IRFSL7540PBF
Mfr. #:
IRFSL7540PBF
제조사:
Infineon Technologies
설명:
MOSFET 60V Single N-Channel HEXFET Power
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRFSL7540PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IRFSL7540PBF 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-262-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
60 V
Id - 연속 드레인 전류:
110 A
Rds On - 드레인 소스 저항:
5.1 mOhms
Vgs th - 게이트 소스 임계 전압:
3.7 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
130 nC
Pd - 전력 손실:
160 W
구성:
하나의
채널 모드:
상승
상표명:
강한IRFET
포장:
튜브
키:
9.45 mm
길이:
10.2 mm
트랜지스터 유형:
1 N-Channel
너비:
4.5 mm
상표:
인피니언 테크놀로지스
순방향 트랜스컨덕턴스 - 최소:
110 S
가을 시간:
56 ns
상품 유형:
MOSFET
상승 시간:
76 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
58 ns
일반적인 켜기 지연 시간:
12 ns
부품 번호 별칭:
SP001557648
단위 무게:
0.073511 oz
Tags
IRFSL75, IRFSL7, IRFSL, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS
***Yang
Trans MOSFET N-CH 60V 110A 3-Pin TO-262 Tube - Rail/Tube
***ark
TUBE / MOSFET,60V 120A, 5.34mOhm 86nC, TO-262
***S
French Electronic Distributor since 1988
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***Yang
Trans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-262 - Rail/Tube
***(Formerly Allied Electronics)
MOSFET, 60V, 160A, 4.2 MOHM, 85 NC QG, TO-262
*** Electronic Components
MOSFET MOSFT 60V 160A 4.2mOhm 85nC
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:160A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.3Milliohms;ID 170A;TO-262;PD 300W;VF 1.3V
***ure Electronics
Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - TO-262-3
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***nell
MOSFET, N-CH, 75V, 170A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
***(Formerly Allied Electronics)
IRFSL7762PBF N-channel MOSFET Transistor, 85 A, 75 V, 3-Pin TO-262
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***nell
MOSFET, N-CH, 75V, 85A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0056ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; P
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET
***ernational Rectifier
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***et Europe
Trans MOSFET N-CH 75V 100A 3-Pin(3+Tab) TO-262
***(Formerly Allied Electronics)
MOSFET; 75V; 100A; 7.8 MOHM; 160 NC QG; TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:100A; On Resistance, Rds(on):7.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ernational Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***(Formerly Allied Electronics)
MOSFET; 55V; 104A; 8 MOHM; 86.7 NC QG; LOGIC LEVEL; TO-262
***et Europe
Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:104A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
부분 # 제조 설명 재고 가격
IRFSL7540PBF
DISTI # 31229000		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		195
  • 1000:$0.9542
  • 500:$1.1520
  • 100:$1.3152
  • 15:$1.6512
IRFSL7540PBF
DISTI # IRFSL7540PBF-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO262
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.0926
IRFSL7540PBF
DISTI # C1S322000587535		Infineon Technologies AGMOSFETs200
  • 100:$1.3100
  • 25:$1.5900
  • 5:$1.9700
IRFSL7540PBF
DISTI # IRFSL7540PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin TO-262 Tube - Rail/Tube (Alt: IRFSL7540PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.0699
  • 2000:$1.0669
  • 4000:$1.0649
  • 6000:$1.0619
  • 10000:$1.0589
IRFSL7540PBF
DISTI # SP001557648		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin TO-262 Tube (Alt: SP001557648)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.1729
  • 10:€1.0419
  • 25:€0.9379
  • 50:€0.8529
  • 100:€0.7819
  • 500:€0.7209
  • 1000:€0.6699
IRFSL7540PBF
DISTI # 942-IRFSL7540PBF		Infineon Technologies AGMOSFET 60V Single N-Channel HEXFET Power
RoHS: Compliant		1000
  • 1:$2.0200
  • 10:$1.7200
  • 100:$1.3700
  • 500:$1.2000
  • 1000:$0.9940
IRFSL7540PBF
DISTI # 9075132P		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 60V 110A TO262, TU800
  • 100:£0.9900
  • 500:£0.8690
  • 1000:£0.7190
  • 2500:£0.6690
영상 부분 # 설명
IRFSL7540PBF

Mfr.#: IRFSL7540PBF

OMO.#: OMO-IRFSL7540PBF

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IRFSL7787PBF

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IRFSL7440PBF

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OMO.#: OMO-IRFSL7534PBF-INFINEON-TECHNOLOGIES

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IRFSL7537PBF

Mfr.#: IRFSL7537PBF

OMO.#: OMO-IRFSL7537PBF-INFINEON-TECHNOLOGIES

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IRFSL7734PBF

Mfr.#: IRFSL7734PBF

OMO.#: OMO-IRFSL7734PBF-INFINEON-TECHNOLOGIES

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IRFSL7787PBF

Mfr.#: IRFSL7787PBF

OMO.#: OMO-IRFSL7787PBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 75V 76A TO262
유효성
재고:
Available
주문 시:
1984
수량 입력:
IRFSL7540PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.01
US$2.01
10
US$1.71
US$17.10
100
US$1.37
US$137.00
500
US$1.19
US$595.00
1000
US$0.99
US$994.00
2000
US$0.92
US$1 850.00
5000
US$0.89
US$4 455.00
10000
US$0.86
US$8 570.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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