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IPB065N15N3GE8187ATMA1

IPB065N15N3GE8187ATMA1
Mfr. #:
IPB065N15N3GE8187ATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-CH 150V 130A TO263-7
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB065N15N3GE8187ATMA1 데이터 시트
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제품 속성
속성 값
Tags
IPB065N15N3GE, IPB065N15N3G, IPB065N15N3, IPB065N15, IPB065N1, IPB065, IPB06, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 150V 130A TO263-7
***et
N-KANAL POWER MOS
***emi
N-Channel PowerTrench® MOSFET 150V, 130A, 6.4mΩ
***et
N-Channel 150V 130A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount D²PAK (TO-263)
***r Electronics
Power Field-Effect Transistor, 130A I(D), 150V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
***(Formerly Allied Electronics)
N-Channel MOSFET; 160 A; 135 V HEXFET; 7+Tab-Pin D2PAK Infineon
***ure Electronics
N-Channel 135 V 5.9 mOhm 315 nC HEXFET® Power MOSFET - D2PAK-7
***ical
Trans MOSFET N-CH Si 135V 160A 7-Pin(6+Tab) D2PAK T/R
***ineon SCT
135 V StrongIRFET™ power MOSFET in D2PAK 7pin, D2PAK7P, RoHS
***ment14 APAC
MOSFET, N-CH, 135V, 160A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Source Voltage Vds:135V; On Resistance
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant, Halogen-Free
***nell
MOSFET, N-CH, 135V, 160A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 135V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 500W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: StrongIRFET, HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 150 V 11.8 mOhm 110 nC HEXFET® Power Mosfet - D2PAK-7
*** Source Electronics
Trans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK T/R / MOSFET N-CH 150V 105A D2PAK-7
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***nell
MOSFET, N-CH, 150V, 105A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 105A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 380W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
*** Stop Electro
Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package, D2PAK7P, RoHS
***et
Trans MOSFET N-CH 55V 120A 7-Pin D2PAK Tube
***ronik
N-CH 55V 120A 4,9mOhm D2PAK-7P
***ark
Automotive G10.2 MOSFET 55V, TAPE & REEL LEFT
***Yang
Transistor MOSFET N-CH 100V 200A 7-Pin TO-263 T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 100V, 200A, 3mΩ
***r Electronics
Power Field-Effect Transistor, 200A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
***nell
MOSFET, N-CH, 100V, 200A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 200A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 250W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
N-Channel 40 V 1.7 mOhm STripFET™ III Power Mosfet - H2PAK-6
***ical
Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) H2PAK T/R
***ark
MOSFET, N CH, 40V, 180A, H2PAK-6; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
부분 # 제조 설명 재고 가격
IPB065N15N3GE8187ATMA1
DISTI # IPB065N15N3GE8187ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 150V 130A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB065N15N3GE8187ATMA1
    DISTI # IPB065N15N3GE8187ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 150V 130A TO263-7
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPB065N15N3GE8187ATMA1
      DISTI # IPB065N15N3GE8187ATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 150V 130A TO263-7
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        영상 부분 # 설명
        IPB065N15N3GATMA1

        Mfr.#: IPB065N15N3GATMA1

        OMO.#: OMO-IPB065N15N3GATMA1

        		 MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3
        IPB065N15N3 G

        Mfr.#: IPB065N15N3 G

        OMO.#: OMO-IPB065N15N3-G

        		 MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3
        IPB065N15N3GATMA1-CUT TAPE

        Mfr.#: IPB065N15N3GATMA1-CUT TAPE

        OMO.#: OMO-IPB065N15N3GATMA1-CUT-TAPE-1190

        		 신규 및 오리지널
        IPB065N15N3GXT

        Mfr.#: IPB065N15N3GXT

        OMO.#: OMO-IPB065N15N3GXT-1190

        		 Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB065N15N3GATMA1)
        IPB065N15N3GE818XT

        Mfr.#: IPB065N15N3GE818XT

        OMO.#: OMO-IPB065N15N3GE818XT-1190

        		 MOSFET
        IPB065N15N3G

        Mfr.#: IPB065N15N3G

        OMO.#: OMO-IPB065N15N3G-1190

        		 Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) TO-263
        IPB065N15N3GATMA1

        Mfr.#: IPB065N15N3GATMA1

        OMO.#: OMO-IPB065N15N3GATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 150V 130A TO263-7
        IPB065N15N3GE8187ATMA1

        Mfr.#: IPB065N15N3GE8187ATMA1

        OMO.#: OMO-IPB065N15N3GE8187ATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 150V 130A TO263-7
        IPB065N15N3GE8197ATMA1

        Mfr.#: IPB065N15N3GE8197ATMA1

        OMO.#: OMO-IPB065N15N3GE8197ATMA1-1190

        		 (Alt: SP001227194)
        IPB065N15N3 G

        Mfr.#: IPB065N15N3 G

        OMO.#: OMO-IPB065N15N3-G-317

        		 RF Bipolar Transistors MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3
        유효성
        재고:
        Available
        주문 시:
        4500
        수량 입력:
        IPB065N15N3GE8187ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
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