SIS330DN-T1-GE3

SIS330DN-T1-GE3
Mfr. #:
SIS330DN-T1-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET RECOMMENDED ALT 78-SISA14DN-T1-GE3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIS330DN-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
E
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
PowerPAK-1212-8
상표명:
TrenchFET, PowerPAK
포장:
키:
1.04 mm
길이:
3.3 mm
시리즈:
SIS
너비:
3.3 mm
상표:
비쉐이 / 실리콘닉스
상품 유형:
MOSFET
공장 팩 수량:
3000
하위 카테고리:
MOSFET
부품 번호 별칭:
SIS330DN-GE3
단위 무게:
0.017637 oz
Tags
SIS330D, SIS330, SIS33, SIS3, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIS330DN-T1-GE3 N-channel MOSFET Transistor; 19 A; 30 V; 8-Pin PowePAK 1212
***et
Trans MOSFET N-CH 30V 19.1A 8-Pin PowerPAK 1212 T/R
***nell
MOSFET, N CH, 30V, 35A, PPK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
부분 # 제조 설명 재고 가격
SIS330DN-T1-GE3
DISTI # SIS330DN-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 35A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIS330DN-T1-GE3
    DISTI # 70616569
    Vishay SiliconixSIS330DN-T1-GE3 N-channel MOSFET Transistor,19 A,30 V,8-Pin PowePAK 1212
    RoHS: Compliant
    0
    • 300:$0.5700
    • 600:$0.5600
    • 1500:$0.5500
    • 3000:$0.5400
    SIS330DN-T1-GE3
    DISTI # 78-SIS330DN-T1-GE3
    Vishay IntertechnologiesMOSFET 30 Volts 35 Amps 52 Watts
    RoHS: Compliant
    0
      SIS330DN-T1-GE3
      DISTI # 2056700
      Vishay IntertechnologiesMOSFET, N CH, 30V, 35A, PPK 1212
      RoHS: Compliant
      100
      • 1:$0.9650
      SIS330DN-T1-GE3
      DISTI # 2056700
      Vishay IntertechnologiesMOSFET, N CH, 30V, 35A, PPK 1212
      RoHS: Compliant
      0
      • 5:£0.5360
      • 25:£0.4560
      • 100:£0.4020
      • 250:£0.3960
      • 500:£0.3890
      영상 부분 # 설명
      SIS330DN-T1-GE3

      Mfr.#: SIS330DN-T1-GE3

      OMO.#: OMO-SIS330DN-T1-GE3

      MOSFET RECOMMENDED ALT 78-SISA14DN-T1-GE3
      SIS330DN-T1-GE3

      Mfr.#: SIS330DN-T1-GE3

      OMO.#: OMO-SIS330DN-T1-GE3-VISHAY

      RF Bipolar Transistors MOSFET 30 Volts 35 Amps 52 Watts
      SIS330DN

      Mfr.#: SIS330DN

      OMO.#: OMO-SIS330DN-1190

      신규 및 오리지널
      SIS330DN-T1-E3

      Mfr.#: SIS330DN-T1-E3

      OMO.#: OMO-SIS330DN-T1-E3-1190

      신규 및 오리지널
      유효성
      재고:
      Available
      주문 시:
      1000
      수량 입력:
      SIS330DN-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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