2SC4117-BL,LF

Mfr. #:: 2SC4117-BL,LF
제조사:: Toshiba
설명:: Bipolar Transistors - BJT Transistor for Low Freq. Amplification
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 2SC4117-BL,LF 데이터 시트
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HTML Datasheet:: 2SC4117-BL,LF Datasheet 2SC4117-BL,LF Datasheet (P4)
ECAD Model:

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SC-70-3

트랜지스터 극성:: NPN

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 120 V

컬렉터-베이스 전압 VCBO:: 120 V

이미터-베이스 전압 VEBO:: 5 V

수집기-이미터 포화 전압:: 300 mV

최대 DC 수집기 전류:: 100 mA

이득 대역폭 곱 fT:: 100 MHz

최소 작동 온도:: - 55 C

최대 작동 온도:: + 125 C

시리즈:: 2SC4117

DC 전류 이득 hFE 최대:: 700 at 2 mA, 6 V

포장:: 릴

상표:: 도시바

DC 수집기/기본 이득 hfe 최소:: 200

Pd - 전력 손실:: 100 mW

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 3000

하위 카테고리:: 트랜지스터

단위 무게:: 0.000219 oz

Tags: 2SC4117-B, 2SC4117, 2SC411, 2SC41, 2SC4, 2SC

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SC4117-BL,LF 설명

***et: Trans GP BJT NPN 120V 0.1A 3-Pin SOT-323

***ical: TRANS NPN 120V 0.1A SOT323

***: TRANS PLN PD=100MWF=1MHZ

***roFlash: Bipolar Transistors - BJT Transistor for Low Freq. Amplification

***ical: Trans GP BJT PNP 120V 0.1A 100mW 3-Pin USM T/R

***enic: 120V 100mW 100mA 200@2mA,6V 100MHz 300mV@10mA,1mA PNP +125¡æ@(Tj) SOT-323 Bipolar Transistors - BJT ROHS

***el Electronic: IC OPAMP GP 800KHZ RRO 14TSSOP

***emi: 45 V, 100 mA, PNP Bipolar Junction Transistor SS SC70 GP XSTR PNP 45V

***ure Electronics: Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 150 mW Surface Mount SC-70-3 (SO

***roFlash: Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

***Yang: Trans GP BJT PNP 45V 0.1A 3-Pin SOT-323 T/R - Tape and Reel

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

***ical: Trans Digital BJT PNP 50V 100mA 200mW 3-Pin UMT T/R

***ure Electronics: DTA123YUA Series 50 V 100 mA Surface Mount PNP Digital Transistor - SC-70

***nell: TRANSISTOR; DIGITAL; PNP; UMT; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 10kohm; Res

***ark: TRANSISTOR; DIGITAL; PNP; UMT; Transistor Type:General Purpose; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:200mW; Min Hfe:33; ft, Typ:250MHz; Case ;RoHS Compliant: Yes

***hard Electronics: Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN SOT-323

***roFlash: Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

***p One Stop Global: Trans GP BJT NPN 45V 0.1A 200mW Automotive 3-Pin SOT-323 T/R

***ure Electronics: BC847BW Series NPN 45 V 200 mW Small Signal Transistor SMT - SOT-323

***(Formerly Allied Electronics): Transistor NPN 45V 0.1A SOT323 | Diodes Inc BC847BW-7-F

***ment14 APAC: Transistor, NPN, SOT323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW;

***nell: TRANSISTOR, NPN, SOT323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: 100mA; DC Current Gain hFE: 290hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 600mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 200; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

***nsix Microsemi: Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

***ure Electronics: BC857BW Series PNP 45 V 200 mW Small Signal Surface Mount Transistor-SC-70-3

***(Formerly Allied Electronics): Transistor PNP 45V 0.1A SOT323 | Diodes Inc BC857BW-7-F

***ark: Transistor, Pnp, Sot323; Transistor Polarity:Pnp; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:200Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:200Mhz Rohs Compliant: Yes |Diodes Inc. BC857BW-7-F

***nell: TRANSISTOR, PNP, SOT323; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 290hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -650mV; Current Ic Continuous a Max: -100mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 220; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: DTC113ZUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70

***ical: Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R

***nell: TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 1kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -;

***ark: TRANSISTOR;DIGITAL;UMT;NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:200mW; Min Hfe:33; ft, Typ:250MHz; Case ;RoHS Compliant: Yes

***ment14 APAC: Transistor; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-323; No. of Pins:3 Pin; Product Range:DTC113Z Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Current Ic Continuous a Max:100mA; DC Collector Current:100mA; DC Current Gain hFE:33hFE; Gain Bandwidth ft Typ:250MHz; Hfe Min:33; No. of Pins:3Pins; Operating Temperature Max:150°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Pd:200mW; Termination Type:Surface Mount Device; Transistor Case Style:SOT-323; Transistor Polarity:NPN; Transistor Type:General Purpose; Transition Frequency ft:250MHz

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	Mfr.#: 2SA1312-BL(TE85L,F OMO.#: OMO-2SA1312-BL-TE85L-F-TOSHIBA-SEMICONDUCTOR-AND-STOR	Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO
	Mfr.#: 2SC3324-BL(TE85L,F OMO.#: OMO-2SC3324-BL-TE85L-F-TOSHIBA-SEMICONDUCTOR-AND-STOR	Bipolar Transistors - BJT NPN 0.1A IC 120V Gen Purp Trans

2SC4117-BL,LF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes