NGTB10N60R2DT4G

Mfr. #:: NGTB10N60R2DT4G
제조사:: ON Semiconductor
설명:: IGBT Transistors RC2 IGBT 10A 600V DPAK
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NGTB10N60R2DT4G 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: DPAK-3

장착 스타일:: SMD/SMT

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 600 V

수집기-이미터 포화 전압:: 1.7 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 20 A

Pd - 전력 손실:: 72 W

최대 작동 온도:: + 175 C

포장:: 릴

연속 수집가 현재 IC 최대:: 10 A

상표:: 온세미컨덕터

게이트-이미터 누설 전류:: +/- 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 2500

하위 카테고리:: IGBT

단위 무게:: 0.012346 oz

Tags: NGTB10, NGTB1, NGTB, NGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB10N60R2DT4G 설명

***ical: Trans IGBT Chip N-CH 600V 20A 72000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB10N60R2DT4G IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 20A, TO-252-3

***nell: IGBT, SINGLE, 600V, 20A, TO-252-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 72W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 16A 56000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB05N60R2DT4G IGBT Single Transistor, 16 A, 1.65 V, 56 W, 600 V, TO-252, 3 Pins

*** Stop Electro: Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 16A, TO-252-3

***nell: IGBT, SINGLE, 600V, 16A, TO-252-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 9A 49000mW 3-Pin(2+Tab) DPAK T/R

***el Electronic: ON SEMICONDUCTOR NGTB03N60R2DT4G IGBT Single Transistor, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 9A, TO-252-3

***nell: IGBT, SINGLE, 600V, 9A, TO-252-3; DC Collector Current: 9A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 49W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 20A 62000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: 10 A, 600 V short-circuit rugged IGBT

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors N Ch 600V 10A

***ark: Ptd High Voltage Rohs Compliant: Yes

***nell: IGBT, D-PAK; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temper

***ical: Trans IGBT Chip N-CH 600V 15A 56000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: N-channel 600 V, 7 A very fast IGBT

***roFlash: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA

***icroelectronics SCT: Short-circuit rugged IGBT, DPAK, Tape and Reel

***ment14 APAC: IGBT, SINGLE, 600V, 15A, TO-252-3

*** Electronic Components: IGBT Transistors PowerMESH" IGBT

***ponent Stockers USA: 15 A 600 V N-CHANNEL IGBT TO-252AA

***nell: IGBT, SINGLE, 600V, 15A, TO-252-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ical: Trans IGBT Chip N-CH 600V 7.5A 38000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: 4.5 A, 600 V very fast IGBT with Ultrafast diode

***ment14 APAC: 3/4.5 A, 600 V VERY FAST IGBT; DC Collector Current:7.5A; Emitter Saturation Voltage Vce(on):2.45V; Power Dissipation Pd:38W;

***nell: IGBT, W DIODE, 600V, 7.5A, 38W, DPAK; Transistor Type:IGBT; DC Collector Current:7.5A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:38W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:38W

***ical: Trans IGBT Chip N=-CH 390V 21A 150000mW Automotive 3-Pin(2+Tab) DPAK T/R

***ure Electronics: ISL9V3040D3ST Series 400 V 21 A Surface Mount N-Channel Ignition IGBT - TO-252AA

***ark: Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:390V; Continuous Collector Current, Ic:17A; Collector Emitter Saturation Voltage, Vce(sat):1.9V; Power Dissipation, Pd:150W ;RoHS Compliant: Yes

***rchild Semiconductor: The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D2-Pak (TO-263), and TO-262 and TO- 220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components.EcoSPARK® devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information.Formerly Developmental Type 49362.

Market price

부분 #	제조	설명	재고	가격
NGTB10N60R2DT4G DISTI # V72:2272_07310750	ON Semiconductor	Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2413	1000:$0.6238 500:$0.7504 250:$0.8025 100:$0.8917 25:$1.0448 10:$1.1609 1:$1.4920
NGTB10N60R2DT4G DISTI # V36:1790_07310750	ON Semiconductor	Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0
NGTB10N60R2DT4G DISTI # NGTB10N60R2DT4GOSCT-ND	ON Semiconductor	IGBT 10A 600V DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	102In Stock	100:$1.0360 10:$1.3290 1:$1.4900
NGTB10N60R2DT4G DISTI # NGTB10N60R2DT4GOSDKR-ND	ON Semiconductor	IGBT 10A 600V DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
NGTB10N60R2DT4G DISTI # NGTB10N60R2DT4GOSTR-ND	ON Semiconductor	IGBT 10A 600V DPAK RoHS: Compliant Container: Tape & Reel (TR)	Temporarily Out of Stock
NGTB10N60R2DT4G DISTI # 25775043	ON Semiconductor	Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2413	12:$1.4920
NGTB10N60R2DT4G DISTI # NGTB10N60R2DT4G	ON Semiconductor	Trans IGBT Chip N-CH 600V 20A 3-Pin DPAK T/R (Alt: NGTB10N60R2DT4G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
NGTB10N60R2DT4G DISTI # NGTB10N60R2DT4G	ON Semiconductor	Trans IGBT Chip N-CH 600V 20A 3-Pin DPAK T/R - Bulk (Alt: NGTB10N60R2DT4G) Min Qty: 481 Container: Bulk	Americas - 0	4810:$0.6409 2405:$0.6579 1443:$0.6659 962:$0.6749 481:$0.6789
NGTB10N60R2DT4G DISTI # 58Y3605	ON Semiconductor	IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 RoHS Compliant: Yes	0	1000:$0.7330 500:$0.9010 250:$0.9530 100:$1.0100 50:$1.1000 25:$1.1900 10:$1.2800 1:$1.4800
NGTB10N60R2DT4G DISTI # 45Y1416	ON Semiconductor	IGBT, SINGLE, 600V, 20A, TO-252-3,DC Collector Current:20A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:72W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes	0
NGTB10N60R2DT4G DISTI # 863-NGTB10N60R2DT4G	ON Semiconductor	IGBT Transistors RC2 IGBT 10A 600V DPAK RoHS: Compliant	3673	1:$1.3700 10:$1.1700 100:$0.8960 500:$0.7920 1000:$0.6250
NGTB10N60R2DT4G	ON Semiconductor	Insulated Gate Bipolar Transistor RoHS: Compliant	4647	1000:$0.6800 500:$0.7200 100:$0.7500 25:$0.7800 1:$0.8400
NGTB10N60R2DT4G DISTI # 8829809P	ON Semiconductor	IGBT N-CH 600V 10A DPAK3, RL	2180	100:£0.3910
NGTB10N60R2DT4G DISTI # 2492866	ON Semiconductor	IGBT, SINGLE, 600V, 20A, TO-252-3 RoHS: Compliant	165	2500:$0.9240 1000:$0.9420 500:$1.1900 100:$1.3500 10:$1.7600 1:$2.0600
NGTB10N60R2DT4G DISTI # 2492866	ON Semiconductor	IGBT, SINGLE, 600V, 20A, TO-252-3 RoHS: Compliant	165	500:£0.3610 250:£0.3620 100:£0.3630 25:£0.3640 5:£0.3790
NGTB10N60R2DT4G	ON Semiconductor	600V,10A,N-Channel IGBT	1750	1:$1.1400 100:$0.8600 500:$0.7300 1000:$0.6900

영상	부분 #	설명
	Mfr.#: KSP44BU OMO.#: OMO-KSP44BU	Bipolar Transistors - BJT NPN Si Transistor Epitaxial
	Mfr.#: STGD25N40LZAG OMO.#: OMO-STGD25N40LZAG	IGBT Transistors PTD HIGH VOLTAGE
	Mfr.#: FGD2736G3-F085 OMO.#: OMO-FGD2736G3-F085	IGBT Transistors ECOSPARK 2 IGNITION IGBT
	Mfr.#: STGB30H60DFB OMO.#: OMO-STGB30H60DFB	IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
	Mfr.#: STTH2R02AFY OMO.#: OMO-STTH2R02AFY	Rectifiers Automotive Ultrafast recovery diode
	Mfr.#: FL5150MX OMO.#: OMO-FL5150MX	Switching Controllers IGBT/MOSFET AC Phase Cut Dimmer Cntroller
	Mfr.#: STFH10N60M2 OMO.#: OMO-STFH10N60M2	MOSFET N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
	Mfr.#: 22-55-2083 OMO.#: OMO-22-55-2083-410	Headers & Wire Housings SL .100" 2X04P CRMP HSG VERS C
	Mfr.#: STFH10N60M2 OMO.#: OMO-STFH10N60M2-STMICROELECTRONICS	MOSFET NCH 600V 7.5A TO220
	Mfr.#: STGB30H60DFB OMO.#: OMO-STGB30H60DFB-STMICROELECTRONICS	TRENCH GATE FIELD-STOP IGBT, HB

NGTB10N60R2DT4G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes