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IPA60R280CFD7XKSA1

IPA60R280CFD7XKSA1
Mfr. #:
IPA60R280CFD7XKSA1
제조사:
Infineon Technologies
설명:
MOSFET LOW POWER_NEW
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPA60R280CFD7XKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPA60R280CFD7XKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220FP-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
6 A
Rds On - 드레인 소스 저항:
237 mOhms
Vgs th - 게이트 소스 임계 전압:
3.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
18 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
24 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
튜브
시리즈:
CoolMOS CFD7
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
9 ns
상품 유형:
MOSFET
상승 시간:
14 ns
공장 팩 수량:
500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
53 ns
일반적인 켜기 지연 시간:
17 ns
부품 번호 별칭:
IPA60R280CFD7 SP001634136
Tags
IPA60R280C, IPA60R28, IPA60R2, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor Low Power 280mΩ 24W 600V PG-TO 220 FullPAK
***ark
Mosfet, N-Ch, 600V, 6A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.237Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
부분 # 제조 설명 재고 가격
IPA60R280CFD7XKSA1
DISTI # V36:1790_18786376		Infineon Technologies AGLOW POWER_NEW0
  • 500000:$0.8963
  • 250000:$0.8999
  • 50000:$1.2940
  • 5000:$2.0420
  • 500:$2.1700
IPA60R280CFD7XKSA1
DISTI # IPA60R280CFD7XKSA1-ND		Infineon Technologies AGMOSFET N-CH TO220FP-3
RoHS: Compliant
Min Qty: 1
Container: Tube		351In Stock
  • 5000:$1.0094
  • 2500:$1.0482
  • 500:$1.3588
  • 100:$1.6539
  • 25:$1.9412
  • 10:$2.0580
  • 1:$2.2900
IPA60R280CFD7XKSA1
DISTI # IPA60R280CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 Power Transistor Low Power 280mΩ 24W 600V PG-TO 220 FullPAK - Rail/Tube (Alt: IPA60R280CFD7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$0.9389
  • 3000:$0.9559
  • 2000:$0.9889
  • 1000:$1.0269
  • 500:$1.0649
IPA60R280CFD7XKSA1
DISTI # SP001634136		Infineon Technologies AGCoolMOS CFD7 Power Transistor Low Power 280mΩ 24W 600V PG-TO 220 FullPAK (Alt: SP001634136)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.8789
  • 500:€0.9119
  • 100:€0.9469
  • 50:€0.9849
  • 25:€1.0259
  • 10:€1.1189
  • 1:€1.2309
IPA60R280CFD7XKSA1
DISTI # 43AC9321		Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.237ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes0
  • 1000:$1.0800
  • 500:$1.3000
  • 100:$1.4800
  • 10:$1.8600
  • 1:$2.1900
IPA60R280CFD7XKSA1
DISTI # 726-IPA60R280CFD7XKS		Infineon Technologies AGMOSFET LOW POWER_NEW
RoHS: Compliant		0
  • 1:$2.1700
  • 10:$1.8400
  • 100:$1.4700
  • 500:$1.2900
  • 1000:$1.0700
IPA60R280CFD7XKSA1
DISTI # 2807978		Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220FP0
  • 500:£0.9470
  • 250:£1.0100
  • 100:£1.0700
  • 10:£1.3600
  • 1:£1.8100
IPA60R280CFD7XKSA1
DISTI # 2807978		Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220FP
RoHS: Compliant		0
  • 1000:$1.6000
  • 500:$1.6900
  • 250:$1.9500
  • 100:$2.3100
  • 10:$2.8300
  • 1:$3.2400
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Mfr.#: STF16N60M6

OMO.#: OMO-STF16N60M6

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STF13N60DM2

Mfr.#: STF13N60DM2

OMO.#: OMO-STF13N60DM2

 MOSFET N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package
R-78B5.0-2.0

Mfr.#: R-78B5.0-2.0

OMO.#: OMO-R-78B5-0-2-0-RECOM-POWER

 2A DC/DC-CONVERTER 'INNOLINE'
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1-INFINEON-TECHNOLOGIES

 MOSFET_(75V,120V(
STF16N60M6

Mfr.#: STF16N60M6

OMO.#: OMO-STF16N60M6-STMICROELECTRONICS

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STW70N60DM6

Mfr.#: STW70N60DM6

OMO.#: OMO-STW70N60DM6-STMICROELECTRONICS

 N-CHANNEL 600 V, 0.037OHM TYP.,
유효성
재고:
Available
주문 시:
3500
수량 입력:
IPA60R280CFD7XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.17
US$2.17
10
US$1.84
US$18.40
100
US$1.47
US$147.00
500
US$1.29
US$645.00
1000
US$1.07
US$1 070.00
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