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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BDP947H6327XTSA1 DISTI # BDP947H6327XTSA1-ND | Infineon Technologies AG | TRANS NPN 45V 3A SOT223 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BDP 947 H6327 DISTI # BDP 947 H6327 | Infineon Technologies AG | Trans GP BJT NPN 45V 3A 4-Pin SOT-223 T/R (Alt: BDP 947 H6327) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 |
|
| BDP947H6327XTSA1 DISTI # BDP947H6327XTSA1 | Infineon Technologies AG | Trans GP BJT NPN 45V 3A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BDP947H6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| BDP947H6327XTSA1 DISTI # 96Y5617 | Infineon Technologies AG | TRANSISTOR, BIPOL, NPN, 45V, SOT-223-4,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:45V,Transition Frequency ft:100MHz,Power Dissipation Pd:5W,DC Collector Current:3A,DC Current Gain hFE:50hFE,Transistor Case RoHS Compliant: Yes | 3160 |
|
| BDP 947 H6327 DISTI # 726-BDP947H6327 | Infineon Technologies AG | Bipolar Transistors - BJT AF TRANSISTOR RoHS: Compliant | 0 | |
| BDP947H6327XTSA1 DISTI # 726-BDP947H6327XTSA1 | Infineon Technologies AG | Bipolar Transistors - BJT AF TRANSISTORS RoHS: Compliant | 4668 |
|
| BDP947H6327XTSA1 DISTI # BDP947 | Infineon Technologies AG | Transistor: NPN,bipolar,45V,3A,5W,SOT223 | 1297 |
|
| BDP947H6327XTSA1 DISTI # BDP947 | Infineon Technologies AG | NPN 45V 3A 5W B:100-475 SOT223 RoHS: Compliant | 10900 |
|
| BDP947H6327XTSA1 DISTI # 2443456 | Infineon Technologies AG | TRANSISTOR, BIPOL, NPN, 45V, SOT-223-4 RoHS: Compliant | 4970 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BDP943 |
신규 및 오리지널 |
|
Mfr.#: BDP947E6327XT OMO.#: OMO-BDP947E6327XT-1190 |
신규 및 오리지널 |
|
Mfr.#: BDP948-E6433 OMO.#: OMO-BDP948-E6433-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BDP948E6327HTSA1 |
TRANS PNP 45V 3A SOT-223 |
|
|
Mfr.#: BDP948E6433HTMA1 |
TRANS PNP 45V 3A SOT-223 |
|
Mfr.#: BDP949 OMO.#: OMO-BDP949-1190 |
TRANSISTOR, NPN, SOT-223, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:60V, Transition Frequency ft:100MHz, Power Dissipation Pd:3W, DC Collector Current:3A, DC Current Gain hFE:8 |
|
Mfr.#: BDP949 E6327 OMO.#: OMO-BDP949-E6327-1190 |
신규 및 오리지널 |
|
Mfr.#: BDP949 E6778 SOT223 |
신규 및 오리지널 |
|
Mfr.#: BDP949 H6327 |
신규 및 오리지널 |
|
Mfr.#: BDP949E6327 |
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon |