BSC340N08NS3GATMA1

Mfr. #:: BSC340N08NS3GATMA1
제조사:: Infineon Technologies
설명:: MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: BSC340N08NS3GATMA1 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: PG-TDSON-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 80 V

Id - 연속 드레인 전류:: 23 A

Rds On - 드레인 소스 저항:: 34 mOhms

Vgs th - 게이트 소스 임계 전압:: 2 V

Vgs - 게이트 소스 전압:: 10 V

Qg - 게이트 차지:: 9.1 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 32 W

구성:: 하나의

채널 모드:: 상승

상표명:: 옵티모스

포장:: 릴

키:: 1.27 mm

길이:: 5.9 mm

시리즈:: OptiMOS 3

트랜지스터 유형:: 1 N-Channel

너비:: 5.15 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 8 S

가을 시간:: 2 ns

상품 유형:: MOSFET

상승 시간:: 3 ns

공장 팩 수량:: 5000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 11 ns

일반적인 켜기 지연 시간:: 8 ns

부품 번호 별칭:: BSC340N08NS3 BSC34N8NS3GXT G SP000447534

단위 무게:: 0.007055 oz

Tags: BSC340N08NS3, BSC340N, BSC34, BSC3, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC340N08NS3GATMA1 설명

***ark: MOSFET, N-CH, 80V, 23A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain

*** Source Electronics: Trans MOSFET N-CH 80V 7A Automotive 8-Pin TDSON EP T/R / MOSFET N-CH 80V 23A TDSON-8

***ure Electronics: N-Channel 80 V 34 mOhm OptiMOS3 Power-Transistor - PG-TDSON-8

***nell: MOSFET, N-CH, 80V, 23A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0275ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:32W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

***ure Electronics: Single N-Channel 80 V 29 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 80V 6.3A 8-Pin SOIC T/R

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:6.3A; On Resistance, Rds(on):29mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 24 Milliohms;ID 6.3A;SO-8;PD 2.5W;VGS +/-20V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:80V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.3A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Row Pitch:6.3mm; SMD Marking:F7488; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ser: MOSFETs 6a, 80V N-Ch MOSFET

***emi: N-Channel PowerTrench® MOSFET, 80V, 6.5A, 39mΩ

***Yang: Trans MOSFET N-CH 80V 6.5A 8-Pin SOIC N T/R - Tape and Reel

***ment14 APAC: N CHANNEL MOSFET, 80V, 6.5A, SOIC, FULL REEL; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:80V; On

***nell: MOSFET, N-CH, 80V, 6.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***(Formerly Allied Electronics): MOSFET; Power; N-Ch; VDSS 60V; RDS(ON) 0.025Ohm; ID 25A; TO-252; PD 50W; VGS +/-20V; -55

***ure Electronics: Single N-Channel 60 V 0.031 Ohms Surface Mount Power Mosfet - TO-252

***nell: MOSFET, N-CH, 60V, 21.4A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 21.4A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 31.25W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

***roFlash: Power Field-Effect Transistor, 9.1A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ure Electronics: Single N-Channel 60 V 26 mOhm 21 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa

Market price

부분 #	제조	설명	재고	가격
BSC340N08NS3GATMA1 DISTI # V72:2272_06390955	Infineon Technologies AG	Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R RoHS: Compliant	4900	3000:$0.2249 1000:$0.2526 500:$0.3046 250:$0.3079 100:$0.3111 25:$0.4366 10:$0.4421 1:$0.5109
BSC340N08NS3GATMA1 DISTI # BSC340N08NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 23A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.2692
BSC340N08NS3GATMA1 DISTI # BSC340N08NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 23A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.3287 500:$0.4108 100:$0.5546 10:$0.7190 1:$0.8200
BSC340N08NS3GATMA1 DISTI # BSC340N08NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 23A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.3287 500:$0.4108 100:$0.5546 10:$0.7190 1:$0.8200
BSC340N08NS3GATMA1 DISTI # 31314390	Infineon Technologies AG	Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R RoHS: Compliant	4900	32:$0.5109
BSC340N08NS3GATMA1 DISTI # BSC340N08NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP - Tape and Reel (Alt: BSC340N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.2079 10000:$0.2009 20000:$0.1939 30000:$0.1869 50000:$0.1839
BSC340N08NS3GATMA1/SAMPLE DISTI # BSC340N08NS3GATMA1/SAMPLE	Infineon Technologies AG	Trans MOSFET N-CH 80V 23A 8-Pin TDSON T/R - Bulk (Alt: BSC340N08NS3GATMA1/SAMPLE) RoHS: Compliant Container: Bulk	Americas - 0
BSC340N08NS3GATMA1 DISTI # 47W3313	Infineon Technologies AG	MOSFET, N CHANNEL, 80V, 23A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0275ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes	2000	1:$0.6800 10:$0.5620 100:$0.3630 500:$0.3270 1000:$0.2910
BSC340N08NS3 G DISTI # 726-BSC340N08NS3G	Infineon Technologies AG	MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3 RoHS: Compliant	37972	1:$0.6800 10:$0.5620 100:$0.3630 1000:$0.2910
BSC340N08NS3GATMA1 DISTI # 726-BSC340N08NS3GATM	Infineon Technologies AG	MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3 RoHS: Compliant	7422	1:$0.6800 10:$0.5620 100:$0.3630 1000:$0.2910
BSC340N08NS3GATMA1 DISTI # 7545320	Infineon Technologies AG	MOSFET N-CHANNEL 80V 7A OPTIMOS3 TDSON8, PK	1415	5:£0.4800 50:£0.3720 250:£0.2420 1250:£0.1920 2500:£0.1880
BSC340N08NS3GATMA1 DISTI # 2212853	Infineon Technologies AG	MOSFET, N-CH, 80V, 23A, 8TDSON RoHS: Compliant	2000	1:$1.0800 10:$0.8900 100:$0.5750 1000:$0.4610 5000:$0.3880
BSC340N08NS3GATMA1 DISTI # 2212853	Infineon Technologies AG	MOSFET, N-CH, 80V, 23A, 8TDSON RoHS: Compliant	2000	5:£0.4900 25:£0.3790 100:£0.2830 250:£0.2470 500:£0.2200

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BSC340N08NS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes