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IXYH40N65C3H1

IXYH40N65C3H1
Mfr. #:
IXYH40N65C3H1
제조사:
Littelfuse
설명:
IGBT Transistors 650V/80A XPT Copacked TO-247
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXYH40N65C3H1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IXYH40N65C3H1 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-247AD-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
650 V
수집기-이미터 포화 전압:
1.85 V
최대 게이트 이미터 전압:
30 V
25C에서 연속 수집기 전류:
80 A
Pd - 전력 손실:
300 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
시리즈:
IXYH40N65
포장:
튜브
연속 수집가 현재 IC 최대:
80 A
상표:
익시스
게이트-이미터 누설 전류:
100 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
30
하위 카테고리:
IGBT
상표명:
XPT
단위 무게:
1.340411 oz
Tags
IXYH40N65C, IXYH40N6, IXYH4, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E***o
    E***o
    ID

    less quantity, refund after dispute

    2019-03-27
    D***v
    D***v
    RU

    Received in st. petersburg in 26 days from the date of payment. The description corresponds. Connected the output with the entrance, stuck in the computer on the 10th windows (the drivers were already standing), launched the terminal, passed/accepted-works. I recommend. (But the fee was raised by some schoolboy).

    2019-06-10
***ark
IGBT Single Transistor, 40 A, 2.35 V, 300 W, 650 V, TO-247, 3 RoHS Compliant: Yes
***i-Key
IGBT 650V 80A 300W TO247
***nell
IGBT, SINGLE, 650V, 40A, TO-247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
부분 # 제조 설명 재고 가격
IXYH40N65C3H1
DISTI # IXYH40N65C3H1-ND		IXYS CorporationIGBT 650V 80A 300W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$6.0917
IXYH40N65C3H1
DISTI # 747-IXYH40N65C3H1		IXYS CorporationIGBT Transistors 650V/80A XPT Copacked TO-247
RoHS: Compliant		328
  • 1:$7.4300
  • 10:$6.6900
  • 25:$6.0900
  • 50:$5.5700
  • 100:$5.5000
  • 250:$5.0100
  • 500:$4.6100
  • 1000:$4.0100
IXYH40N65C3H1
DISTI # 2470019		IXYS CorporationIGBT, SINGLE, 650V, 40A, TO-247
RoHS: Compliant		6
  • 1:$11.7600
  • 10:$10.5900
  • 25:$9.6400
  • 50:$8.8100
  • 100:$8.7100
  • 250:$7.9300
  • 500:$7.3000
  • 1000:$6.3500
IXYH40N65C3H1
DISTI # 2470019		IXYS CorporationIGBT, SINGLE, 650V, 40A, TO-247
RoHS: Compliant		9
  • 1:£7.6900
  • 5:£7.0300
  • 10:£5.7600
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OMO.#: OMO-STBR6012WY-STMICROELECTRONICS

 DIODE GEN PURP 1.2KV 60A DO247
유효성
재고:
147
주문 시:
2130
수량 입력:
IXYH40N65C3H1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$7.43
US$7.43
10
US$6.69
US$66.90
25
US$6.09
US$152.25
50
US$5.57
US$278.50
100
US$5.50
US$550.00
250
US$5.01
US$1 252.50
500
US$4.61
US$2 305.00
1000
US$4.01
US$4 010.00
2500
US$3.96
US$9 900.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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