ZTX653STZ

Mfr. #:: ZTX653STZ
제조사:: Diodes Incorporated
설명:: Bipolar Transistors - BJT NPN Super E-Line
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: ZTX653STZ 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: ZTX653STZ Datasheet
ECAD Model:

제품 속성
속성 값

제조사:: 다이오드 주식회사

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-92-3

트랜지스터 극성:: NPN

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 100 V

컬렉터-베이스 전압 VCBO:: 120 V

이미터-베이스 전압 VEBO:: 5 V

수집기-이미터 포화 전압:: 0.23 V

최대 DC 수집기 전류:: 2 A

이득 대역폭 곱 fT:: 175 MHz

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: ZTX653S

키:: 4.01 mm

길이:: 4.77 mm

포장:: 대부분

너비:: 2.41 mm

상표:: 다이오드 주식회사

지속적인 수집가 전류:: 2 A

Pd - 전력 손실:: 1 W

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 2000

하위 카테고리:: 트랜지스터

단위 무게:: 0.016000 oz

Tags: ZTX653S, ZTX653, ZTX65, ZTX6, ZTX

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZTX653STZ 설명

***ure Electronics: ZTX653 Series NPN 2 A 100 V Silicon Planar Medium Power Transistor - TO-92-3

***roFlash: Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon

*** Electronics: Bipolar Transistors - BJT NPN Super E-Line

***(Formerly Allied Electronics): Medium Pwr; NPN; Transistor; 2A; 100V; E-Line

***ure Electronics: ZTX653 Series NPN 2 A 100 V Silicon Planar Medium Power Transistor - TO-92-3

***C: Trans GP BJT NPN 100V 2A 3-Pin E-Line TO-92 Trans GP BJT NPN 100V 2A 3-Pin E-Line TO-92 Trans GP BJT NPN 100V 2A 3-Pin E-Line TO-92 Trans GP BJT NPN 100V 2A 3-Pin E-Line TO-92

***fin: Transistor NPN ZTX653 ZETEX Ampere=2 V=100 TO92

***ment14 APAC: Transistor, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:175MHz; Power Dissipation Pd:1W;

***ark: BIPOLAR TRANSISTOR, NPN, 100V; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:175MHz RoHS Compliant: Yes

***nell: TRANSISTOR, NPN E-LINE; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 175MHz; Power Dissipation Pd: 1W; DC Collector Current: 2A; DC Current Gain hFE: -; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 2A; Current Ic @ Vce Sat: 2A; Current Ic Continuous a Max: 2A; Current Ic hFE: 500mA; Device Marking: ZTX653; Gain Bandwidth ft Min: 140MHz; Gain Bandwidth ft Typ: 175MHz; Hfe Min: 100; No. of Transistors: 1; Pin Configuration: e; Power Dissipation Ptot Max: 1W; Transistor Type: Power Bipolar; Voltage Vcbo: 120V

***id Electronics: Diodes Inc ZTX453 NPN 1A 1W BiPolar Transistor

***el Electronic: Bipolar Transistors - BJT NPN Medium Power

***C: Trans GP BJT NPN 100V 1A 3-Pin E-Line TO-92 Trans GP BJT NPN 100V 1A 3-Pin E-Line TO-92 Trans GP BJT NPN 100V 1A 3-Pin E-Line TO-92

***nell: TRANSISTOR, NPN E-LINE; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 1W; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 700mV; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 1A; Current Ic hFE: 150mA; Device Marking: ZTX453; Gain Bandwidth ft Min: 150MHz; Hfe Min: 40; No. of Transistors: 1; Pin Configuration: e; Power Dissipation Ptot Max: 1W; Transistor Type: Power Bipolar; Voltage Vcbo: 120V

***p One Stop Global: Trans GP BJT NPN 100V 1A 3-Pin E-Line Box

***ark: Trans, Npn, 100V, 1A, 150Deg C, 1W Rohs Compliant: Yes

***des Inc SCT: NPN, 75V, 3A, E-Line, 1W

***r Electronics: Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

*** Source Electronics: Trans GP BJT NPN 100V 1A 1000mW 3-Pin TO-92 Box / TRANS NPN 80V 1A TO-92

***emi: High Current NPN Bipolar Transistor

***nell: TRANSISTOR, NPN TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 1W; DC Collector Current: 1A; DC Current Gain hFE: 40hFE; Transistor Case Style: T

***ark: Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; DC Current Gain Min (hfe):40; Package/Case:TO-92; C-E Breakdown Voltage:80V; DC Collector Current:1A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes

***ment14 APAC: TRANSISTOR, NPN TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic Max:1.5A; Current Ic Continuous a Max:1.5A; Current Ic hFE:150mA; Gain Bandwidth ft Typ:130MHz; Hfe Min:40; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:f; Power Dissipation Ptot Max:625mW; Transistor Type:General Purpose; Voltage Vcbo:100V

***et: Trans Darlington NPN 100V 1.5A 3-Pin TO-92 Bulk

***S: French Electronic Distributor since 1988

***ark: Transistor; Transistor Type:Bipolar; Leaded Process Compatible:Yes; Package/Case:TO-92; Peak Reflow Compatible (260 C):Yes; Current Rating:1.5A; Mounting Type:Through Hole; Voltage Rating:100V RoHS Compliant: Yes

***r Electronics: Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-92

***ure Electronics: MPSAXX Series NPN 625 mW 100V 800 mA Through Hole Darlington Transistor TO-92-3

***emi: NPN Bipolar Junction Darlington Transistor

***Yang: Trans Darlington NPN 100V 0.8A 3-Pin TO-92 Bulk - Bulk

***ment14 APAC: Transistor, NPN, 100V, 0.5A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:200MHz; Power

***rchild Semiconductor: NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics.

***nell: TRANSISTOR, NPN, 100V, 0.5A, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 500mA; DC Current Gain hFE: 10000hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Market price

부분 #	제조	설명	재고	가격
ZTX653STZ DISTI # ZTX653STZ-ND	Diodes Incorporated	TRANS NPN 100V 2A E-LINE RoHS: Compliant Min Qty: 2000 Container: Tape & Box (TB)	Temporarily Out of Stock	2000:$0.4128
ZTX653STZ DISTI # ZTX653STZ	Diodes Incorporated	Trans GP BJT NPN 100V 2A 3-Pin E-Line Box - Ammo Pack (Alt: ZTX653STZ) RoHS: Not Compliant Min Qty: 2000 Container: Ammo Pack	Americas - 0	2000:$0.2999 4000:$0.2849 8000:$0.2719 12000:$0.2589 20000:$0.2539
ZTX653STZ DISTI # ZTX653STZ	Diodes Incorporated	Trans GP BJT NPN 100V 2A 3-Pin E-Line Box (Alt: ZTX653STZ) RoHS: Compliant Min Qty: 2000 Container: Box	Europe - 0	2000:€0.3299 4000:€0.3219 8000:€0.3159 12000:€0.3149 20000:€0.3139
ZTX653STZ DISTI # 70438678	Diodes Incorporated	Medium Pwr,NPN,Transistor,2A,100V,E-Line RoHS: Compliant	0	25:$0.5700 100:$0.4700 250:$0.4400 500:$0.4000
ZTX653STZ DISTI # 522-ZTX653STZ	Diodes Incorporated	Bipolar Transistors - BJT NPN Super E-Line RoHS: Compliant	37	1:$0.8600 10:$0.7130 100:$0.4600 1000:$0.3680
ZTX653STZ DISTI # 6697464	Zetex / Diodes Inc	MEDIUM PWR NPN TRANSISTOR 2A 100V E-LINE, PK	885	5:£0.7800 25:£0.5180 100:£0.4060 500:£0.3500 1000:£0.2920
ZTX653STZ DISTI # 6697464P	Zetex / Diodes Inc	MEDIUM PWR NPN TRANSISTOR 2A 100V E-LINE, TA	5700	25:£0.5180 100:£0.4060 500:£0.3500 1000:£0.2920
ZTX653STZ	Zetex / Diodes Inc	RoHS: Compliant	Americas - 1829

영상	부분 #	설명
	Mfr.#: MJ15003G OMO.#: OMO-MJ15003G	Bipolar Transistors - BJT 20A 140V 250W NPN
	Mfr.#: ZTX753STZ OMO.#: OMO-ZTX753STZ	Bipolar Transistors - BJT PNP Super E-Line
	Mfr.#: IX31G-A-10S-CV(7.0) OMO.#: OMO-IX31G-A-10S-CV-7-0--HIROSE	신규 및 오리지널
	Mfr.#: IX61G-A-10P OMO.#: OMO-IX61G-A-10P-HIROSE	CONN MULTI-PURP RCPT 10P R/A SMD
	Mfr.#: ZTX753STZ OMO.#: OMO-ZTX753STZ-DIODES	Bipolar Transistors - BJT PNP Super E-Line
	Mfr.#: CRCW08050000Z0EBC OMO.#: OMO-CRCW08050000Z0EBC-VISHAY-DALE	RES SMD 0 OHM JUMP 1/8W 0805
	Mfr.#: MJ15003G OMO.#: OMO-MJ15003G-ON-SEMICONDUCTOR	Bipolar Transistors - BJT 20A 140V 250W NPN

ZTX653STZ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes