S29GL01GS10FHI010

S29GL01GS10FHI010
Mfr. #:
S29GL01GS10FHI010
제조사:
Cypress Semiconductor
설명:
NOR Flash Nor
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
S29GL01GS10FHI010 데이터 시트
배달:
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지불:
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ECAD Model:
추가 정보:
S29GL01GS10FHI010 추가 정보 S29GL01GS10FHI010 Product Details
제품 속성
속성 값
제조사:
사이프러스 반도체
제품 카테고리:
NOR 플래시
RoHS:
Y
장착 스타일:
SMD/SMT
패키지/케이스:
FBGA-64
시리즈:
S29GL01G/512/256/128S
메모리 크기:
1 Gbit
인터페이스 유형:
평행 한
조직:
128 M x 8
타이밍 유형:
비동기
데이터 버스 폭:
8 bit
공급 전압 - 최소:
2.7 V
공급 전압 - 최대:
3.6 V
공급 전류 - 최대:
100 mA
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 85 C
포장:
쟁반
메모리 유형:
도 아니다
속도:
100 ns
건축학:
미러비트 이클립스
상표:
사이프러스 반도체
습기에 민감한:
상품 유형:
NOR 플래시
기준:
공통 플래시 인터페이스(CFI)
공장 팩 수량:
180
하위 카테고리:
메모리 및 데이터 저장
상표명:
미러비트 이클립스
Tags
S29GL01GS10FHI, S29GL01GS10FH, S29GL01GS10F, S29GL01GS10, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Parallel NOR Flash Memory, 1024 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***ical
NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 100ns 64-Pin Fortified BGA Tray
***ark
TRAY PKGED / 1G BIT, 3V, 100NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***ark
TAPE AND REEL / 256 MBIT, 3V, 100NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
***ical
NOR Flash Parallel 3V/3.3V 256M-bit 16M x 16 100ns 64-Pin FBGA T/R
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***et
NOR Flash Parallel 3V/3.3V 256Mbit 16M x 16bit 100ns 64-Pin FBGA Tray
***ment14 APAC
MEMORY, FLASH, 256MB, 3V, 64BGA; Memory Size:256Mbit; Interface Type:CFI; Access Time:100ns; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:BGA; No. of Pins:64; Operating Temperature Range:-40°C to +85°C; SVHC:No SVHC (20-Jun-2011); IC Generic Number:S29GL256S
***ress Semiconductor SCT
Parallel NOR Flash Memory, 128 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***et
NOR Flash Parallel 3V/3.3V 128Mbit 8M x 16bit 100ns 64-Pin FBGA Tray
***nell
MEMORY, FLASH, 128MB, 3V, 64BGA; Memory Size:128Mbit; Interface Type:CFI; Access Time:100ns; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:BGA; No. of Pins:64; Operating Temperature Range:-40°C to +85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (18-Jun-2012); IC Generic Number:S29GL128S
***p One Stop Global
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 70ns Automotive 64-Pin FBGA T/R
***ron SCT
NOR Flash, Legacy NOR Flash, 128Mb, 2.7V-3.6V, 64-ball FBGA, RoHS
***i-Key
PARALLEL NOR SLC 8MX16 LBGA
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
부분 # 제조 설명 재고 가격
S29GL01GS10FHI010
DISTI # C1S725700079445
Cypress SemiconductorUnclassified1390
  • 200:$9.0800
  • 100:$9.7900
  • 50:$12.7000
  • 10:$13.9000
  • 5:$16.9000
  • 1:$18.9000
S29GL01GS10FHI010
DISTI # 428-4066-ND
Cypress SemiconductorIC FLASH 1G PARALLEL 64BGA
RoHS: Compliant
Min Qty: 1
Container: Tray
1749In Stock
  • 1080:$8.0845
  • 540:$8.3633
  • 360:$8.4500
  • 180:$8.8898
  • 50:$10.0978
  • 25:$10.1536
  • 10:$10.3890
  • 1:$11.2200
S29GL01GS10FHI010
DISTI # 727-S29GL01GS10FHI01
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
180
  • 1:$12.9800
  • 10:$11.8000
  • 25:$10.9200
  • 50:$10.0300
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유효성
재고:
335
주문 시:
2318
수량 입력:
S29GL01GS10FHI010의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$12.98
US$12.98
10
US$11.80
US$118.00
25
US$10.92
US$273.00
50
US$10.03
US$501.50
250
US$9.14
US$2 285.00
500
US$8.55
US$4 275.00
1000
US$7.85
US$7 850.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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