NDS8936

Mfr. #:: NDS8936
제조사:: ON Semiconductor
설명:: MOSFET 2N-CH 30V 5.3A 8-SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NDS8936 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 페어차일드 반도체

제품 카테고리: FET - 어레이

시리즈: -

포장: 디지릴R

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

공급자-장치-패키지: 8-SO

FET형: 2 N-Channel (Dual)

파워맥스: 900mW

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 720pF @ 15V

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 5.3A

Rds-On-Max-Id-Vgs: 35 mOhm @ 5.3A, 10V

Vgs-th-Max-Id: 2.8V @ 250μA

Gate-Charge-Qg-Vgs: 30nC @ 10V

Tags: NDS8936, NDS893, NDS89, NDS8, NDS

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NDS8936 설명

***ical: Trans MOSFET N-CH 30V 5.3A 8-Pin SOIC T/R

***i-Key: MOSFET 2N-CH 30V 5.3A 8-SOIC

***ser: MOSFETs Dual N-Ch FET Enhancement Mode

***inecomponents.com: RECOMMEND: FDS6912A

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.3A; On Resistance, Rds(on):0.035ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

***nell: MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:NN; Voltage, Vds Typ:30V; Current, Id Cont:6.7A; Resistance, Rds On:0.03ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:15A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation:2W; Power, Pd:2W; Row Pitch:6.3mm; SMD Marking:NDS8936; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:2; Voltage, Vds Max:30V; Voltage, Vgs th N Channel 1 min:2.8V; Voltage, Vgs th N Channel 2 Min:2.8V; Width, External:4.05mm

***ment14 APAC: MOSFET, DUAL, NN, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:15A; Row Pitch:6.3mm; SMD Marking:NDS8936; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th N Channel 1 Min:2.8V; Voltage Vgs th N Channel 2 Min:2.8V

Market price

부분 #	제조	설명	재고	가격
NDS8936 DISTI # NDS8936TR-ND	ON Semiconductor	MOSFET 2N-CH 30V 5.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NDS8936 DISTI # NDS8936CT-ND	ON Semiconductor	MOSFET 2N-CH 30V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
NDS8936 DISTI # NDS8936DKR-ND	ON Semiconductor	MOSFET 2N-CH 30V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
NDS8936 DISTI # 34C1626	ON Semiconductor	DUAL N CHANNEL MOSFET, 30V, 5.3A, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V, RoHS Compliant: Yes	0
NDS8936	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	10943	1000:$0.7900 500:$0.8400 100:$0.8700 25:$0.9100 1:$0.9800
NDS8936 DISTI # 512-NDS8936	ON Semiconductor	MOSFET Dual N-Ch FET Enhancement Mode RoHS: Compliant	0
NDS8936CT	Fairchild Semiconductor Corporation		35
NDS8936	Fairchild Semiconductor Corporation	INSTOCK	62431

영상	부분 #	설명
	Mfr.#: NDS9936 OMO.#: OMO-NDS9936	MOSFET Dl N-Ch Enhancement
	Mfr.#: NDS1-01V OMO.#: OMO-NDS1-01V-1190	신규 및 오리지널
	Mfr.#: NDS4948 OMO.#: OMO-NDS4948-1190	신규 및 오리지널
	Mfr.#: NDS8936 OMO.#: OMO-NDS8936-ON-SEMICONDUCTOR	MOSFET 2N-CH 30V 5.3A 8-SOIC
	Mfr.#: NDS9405 OMO.#: OMO-NDS9405-ON-SEMICONDUCTOR	MOSFET P-CH 20V 4.3A 8-SOIC
	Mfr.#: NDS9435A-NL OMO.#: OMO-NDS9435A-NL-1190	신규 및 오리지널
	Mfr.#: NDS9933 OMO.#: OMO-NDS9933-ON-SEMICONDUCTOR	MOSFET 2P-CH 20V 3.2A 8-SOIC
	Mfr.#: NDS9936-NL OMO.#: OMO-NDS9936-NL-1190	신규 및 오리지널
	Mfr.#: NDS9948 OMO.#: OMO-NDS9948-ON-SEMICONDUCTOR	MOSFET 2P-CH 60V 2.3A 8-SOIC
	Mfr.#: NDS9952AHD OMO.#: OMO-NDS9952AHD-1190	신규 및 오리지널

NDS8936

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes