TGF3015-SM

Mfr. #:: TGF3015-SM
제조사:: Qorvo
설명:: RF JFET Transistors .03-3GHz Gain 17dB P3dB [email protected] GaN
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TGF3015-SM 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: TGF3015-SM 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN SiC

얻다:: 17.1 dB

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 32 V

Vgs - 게이트 소스 항복 전압:: - 2.7 V

Id - 연속 드레인 전류:: 557 mA

출력 파워:: 11 W

Pd - 전력 손실:: 15.3 W

장착 스타일:: SMD/SMT

패키지/케이스:: QFN-EP-16

포장:: 쟁반

구성:: 하나의

동작 주파수:: 0.03 GHz to 3 GHz

상표:: 코르보

개발 키트:: TGF3015-SM-EVB1

습기에 민감한:: 네

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 100

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 1120419

Tags: TGF30, TGF3, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF3015-SM 설명

***W: RF Power Transistor, 0.03- 3 GHz, 10 W, 17.1 dB, 32 V, GaN, Plastic

TGF3015-SM 추가 정보

TGF3015-SM GaN HEMT: Qorvo TGF3015-SM is a 10W (P3dB), 50ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3x3mm package that saves real estate of already space-constrained handheld radios.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

부분 #	제조	설명	재고	가격
TGF3015-SM DISTI # 772-TGF3015-SM	Qorvo	RF JFET Transistors .03-3GHz Gain 17dB P3dB [email protected] GaN RoHS: Compliant	156	1:$58.0000 25:$51.0000 100:$45.0000
TGF3015-SM-EVB DISTI # 772-TGF3015-SM-EVB	Qorvo	RF Development Tools RoHS: Compliant	0	1:$875.0000

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