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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSC016N03LSGATMA1 DISTI # V72:2272_06383408 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 1005 |
|
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call |
|
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call |
|
| BSC016N03LSGATMA1 DISTI # 31077150 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC016N03LSGATMA1 DISTI # 26195180 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 1005 |
|
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC016N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 5000 |
|
| BSC016N03LSGATMA1. DISTI # 31AC8215 | Infineon Technologies AG | TRANSITIONAL MOSFETS | 0 | |
| BSC016N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 16888 |
|
| BSC016N03LSGATMA1 | Infineon Technologies AG | Single N-Channel 30 V 1.6 mOhm 98 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant | 5000Reel |
|
| BSC016N03LS G DISTI # 726-BSC016N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 4079 |
|
| BSC016N03LSGATMA1 DISTI # 726-BSC016N03LSGATMA | Infineon Technologies AG | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 4947 |
|
| BSC016N03LSGXT DISTI # 726-BSC016N03LSGXT | Infineon Technologies AG | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 0 | |
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,100A,125W,PG-TDSON-8 | 4407 |
|
| BSC016N03LSGATMA1 DISTI # C1S322000210721 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 1005 |
|
| BSC016N03LSGATMA1 DISTI # C1S322000464243 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
|
Mfr.#: BSC016N03LSGATMA1 OMO.#: OMO-BSC016N03LSGATMA1 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSC016N03LSGXT/BKN OMO.#: OMO-BSC016N03LSGXT-BKN-1190 |
INSTOCK |
|
Mfr.#: BSC016N03LSG OMO.#: OMO-BSC016N03LSG-1190 |
Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC016N03LSG , TDA18275A |
신규 및 오리지널 |
|
Mfr.#: BSC016N03LSGATMA1 , TDA1 |
신규 및 오리지널 |
|
Mfr.#: BSC016N03LSGXT OMO.#: OMO-BSC016N03LSGXT-1190 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC016N03LSGATMA1 |
MOSFET N-CH 30V 100A TDSON8 |