TN2501N8-G

Mfr. #:: TN2501N8-G
제조사:: Microchip Technology
설명:: MOSFET 18V 2.5Ohm
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TN2501N8-G 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: TN2501N8-G 추가 정보 TN2501N8-G Product Details

제품 속성
속성 값

제조사:: 마이크로칩

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-89-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 18 V

Id - 연속 드레인 전류:: 400 mA

Rds On - 드레인 소스 저항:: 2.5 Ohms

Vgs - 게이트 소스 전압:: 15 V

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 1.6 W

구성:: 하나의

채널 모드:: 상승

포장:: 릴

키:: 1.6 mm

길이:: 4.6 mm

제품:: MOSFET 소신호

트랜지스터 유형:: 1 N-Channel

유형:: FET

너비:: 2.6 mm

상표:: 마이크로칩 기술

가을 시간:: 15 ns

상품 유형:: MOSFET

상승 시간:: 15 ns

공장 팩 수량:: 2000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 15 ns

일반적인 켜기 지연 시간:: 5 ns

단위 무게:: 0.001862 oz

Tags: TN2501, TN250, TN25, TN2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TN2501N8-G 설명

***th Star Micro: Trans MOSFET N-CH 18V 0.4A 4-Pin (3+Tab) SOT-89

***ure Electronics: TN2501 Series 18 V 400 mA N-Channel Enhancement-Mode Vertical DMOS FET -SOT-89-3

***(Formerly Allied Electronics): MOSFET, N-CHANNEL ENHANCEMENT-MODE, 18V, 2.5 Ohm3 SOT-89 T/R | Microchip Technology Inc. TN2501N8-G

*** Stop Electro: Power Field-Effect Transistor, 0.4A I(D), 18V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA

***ical: Trans MOSFET N-CH 250V 0.24A Automotive 4-Pin(3+Tab) SOT-89 T/R

***ure Electronics: N-Channel 250 V 8.5 Ohm Surface Mount Enhancement Mode Vertical DMOS FET-SOT-89

***(Formerly Allied Electronics): 250V N-Channel Enhancement MOSFET SOT-89 | Diodes Inc ZVN4525ZTA

***emi: Single N-Channel Power MOSFET 250V, 0.6A, 6.5Ω

***ure Electronics: N-Channel 250 V 0.6 A 6.5 Ohm Surface Mount MOSFET - SOT-89

***nell: MOSFET, N-CH, 250V, 0.6A, SOT-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 600mA; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 5ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.3V; Po

***ure Electronics: ZXMN10A07Z Series 100 V 0.7 Ohm N-Channel Enhancement Mode MOSFET - SOT-89

***ark: Mosfet, N-Ch, 100V, 1.4A, Sot-89 Rohs Compliant: Yes |Diodes Inc. ZXMN10A07ZTA

***des Inc SCT: 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE, 100 V, RoHS

***ical: Trans MOSFET P-CH 250V 0.205A Automotive 4-Pin(3+Tab) SOT-89 T/R

***ure Electronics: P-Channel 250 V 14 Ohm Surface Mount Enhancement Mode Vertical DMOS FET-SOT-89

***ark: Mosfet, P-Ch, 250V, 0.205A, Sot-89 Rohs Compliant: Yes |Diodes Inc. ZVP4525ZTA

*** Electronic Components: RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V

***ure Electronics: AFT05MSx Series 30 V 520 MHz N-Channel RF Power LDMOS Transistor - SOT-89-3

***W: RF Power Transistor, 0.136 to 0.941 GHz, 4 W, Typ.Gain in dB is 20.9 @ 520 MHz, 7.5 V, LDMOS, SOT-89A

***et Japan: Transistor RF FET N-CH 30V 136MHz to 941MHz 3-Pin SOT-89 T/R

***ark: Rf Ldmos, N-Ch, 30V, Sot-89; Drain Source Voltage Vds:30V; Continuous Drain Current Id:-; Power Dissipation Pd:28W; Operating Frequency Min:136Mhz; Operating Frequency Max:941Mhz; Rf Transistor Case:Sot-89; No. Of Pins:3Pins; Msl:- Rohs Compliant: Yes |Nxp AFT05MS004NT1

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 12 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 28

***emi: Single PCP N-Channel Power MOSFET, 60V, 4.5A, 117mΩ

***ure Electronics: N-Channel 60 V 117 mOhm Surface Mount Power Mosfet - SOT-89

***ical: Trans MOSFET N-CH 60V 4.5A 4-Pin(3+Tab) SOT-89 T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.5A; On Resistance Rds(On):0.092Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V Rohs Compliant: Yes

***r Electronics: Small Signal Field-Effect Transistor, 4.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA

***el Electronic: Fixed Inductors 4.7μH Shielded ±20% 0806 (2016 Metric) Tape & Reel (TR) 240mOhm Max CIGW Surface Mount FIXED IND 4.7UH 1.4A 240MOHM SMD

Market price

부분 #	제조	설명	재고	가격
TN2501N8-G DISTI # V72:2272_06515651	Microchip Technology Inc	Trans MOSFET N-CH Si 18V 0.4A 4-Pin(3+Tab) SOT-89 RoHS: Compliant	2118	1000:$0.8289 500:$0.8376 250:$0.8464 100:$0.8551 25:$0.9538 10:$1.1309 1:$1.2779
TN2501N8-G DISTI # V36:1790_06515651	Microchip Technology Inc	Trans MOSFET N-CH Si 18V 0.4A 4-Pin(3+Tab) SOT-89 RoHS: Compliant	0	200000:$0.5888 2000:$0.7509
TN2501N8-G DISTI # TN2501N8-G-ND	Microchip Technology Inc	MOSFET N-CH 18V 400MA SOT89-3 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$0.8858
TN2501N8-G DISTI # 25749246	Microchip Technology Inc	Trans MOSFET N-CH Si 18V 0.4A 4-Pin(3+Tab) SOT-89 RoHS: Compliant	2118	1000:$0.8911 500:$0.9004 250:$0.9099 100:$0.9192 25:$1.0253 11:$1.2157
TN2501N8-G DISTI # 27693731	Microchip Technology Inc	Trans MOSFET N-CH Si 18V 0.4A 4-Pin(3+Tab) SOT-89 RoHS: Compliant	1964	100:$1.0028 57:$1.0556
TN2501N8-G DISTI # TN2501N8-G	Microchip Technology Inc	Trans MOSFET N-CH 18V 0.4A 3-Pin SOT-89 T/R - Tape and Reel (Alt: TN2501N8-G) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	20000:$0.5449 12000:$0.5539 8000:$0.5709 4000:$0.5899 2000:$0.6099
TN2501N8-G DISTI # TN2501N8-G	Microchip Technology Inc	Trans MOSFET N-CH 18V 0.4A 3-Pin SOT-89 T/R (Alt: TN2501N8-G) RoHS: Compliant Min Qty: 2000 Container: Tape and Reel	Asia - 0	100000:$0.5119 50000:$0.5244 20000:$0.5375 10000:$0.5513 6000:$0.5658 4000:$0.5890 2000:$0.6143
TN2501N8-G DISTI # TN2501N8-G	Microchip Technology Inc	Trans MOSFET N-CH 18V 0.4A 3-Pin SOT-89 T/R (Alt: TN2501N8-G) RoHS: Compliant Min Qty: 2000 Container: Tape and Reel	Europe - 0	20000:€0.5269 12000:€0.5479 8000:€0.5549 4000:€0.5639 2000:€0.5699
TN2501N8-G DISTI # 53Y4248	Microchip Technology Inc	MOSFET, N-CHANNEL ENHANCEMENT-MODE, 18V, 2.5 OHM 3 SOT-89 T/R	0	1:$0.8860 2000:$0.8860
TN2501N8-G DISTI # 70453861	Microchip Technology Inc	MOSFET,N-CHANNEL ENHANCEMENT-MODE,18V,2.5 Ohm3 SOT-89T/R RoHS: Compliant	0	2000:$0.8370
TN2501N8-G DISTI # 689-TN2501N8-G	Microchip Technology Inc	MOSFET 18V 2.5Ohm RoHS: Compliant	5112	1:$1.1700 10:$1.1500 25:$0.9780 100:$0.8850 250:$0.7790 500:$0.6640 1000:$0.6050 2000:$0.6050 4000:$0.5520 10000:$0.5370
TN2501N8 DISTI # 689-TN2501N8	Microchip Technology Inc	MOSFET 18V 2.5Ohm RoHS: Not compliant	0
TN2501N8-G DISTI # TN2501N8-G	Microchip Technology Inc	MOSFETN-CHANNEL ENHANCEMENT-MODE18V2.5 Ohm RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel	8480	1000:$0.7200 100:$0.8600 26:$0.9500 1:$1.1400
TN2501N8-G	Microchip Technology Inc	Trans MOSFET N-CH Si 18V 0.4A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant	2023 In Stock	1:$1.0600 25:$1.0000 100:$0.9500 250:$0.9100
TN2501N8-G DISTI # TN2501N8G	Microchip Technology Inc		2023	1:$1.0600 25:$1.0000 100:$0.9500 250:$0.9100 500:$0.8600 1000:$0.6500 1500:$0.6000 2000:$0.5900

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TN2501N8-G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes