IPB042N03LGATMA1

Mfr. #:: IPB042N03LGATMA1
제조사:: Infineon Technologies
설명:: MOSFET LV POWER MOS
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPB042N03LGATMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-263-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

구성:: 하나의

상표명:: 옵티모스

포장:: 릴

키:: 4.4 mm

길이:: 10 mm

트랜지스터 유형:: 1 N-Channel

너비:: 9.25 mm

상표:: 인피니언 테크놀로지스

상품 유형:: MOSFET

하위 카테고리:: MOSFET

부품 번호 별칭:: G IPB042N03L IPB42N3LGXT SP000304124

단위 무게:: 0.139332 oz

Tags: IPB042N0, IPB042, IPB04, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB042N03LGATMA1 설명

***ical: TransMOSFETNCH30V70A3Pin2TabD2PAKTR

***ment14APAC: MOSFETNCH70A30VPGTO2633;TransistorPolarityNChannel;ContinuousDrainCurrentId70A;DrainSourceVoltageVds30V;OnResistanceRdson35mohm;RdsonTestVoltageVgs10V;PowerDissipationPd79W;OperatingTemperatureRange55Cto175C;TransistorCaseStyleTO263;NoofPins3;SVHCNoSVHC19Dec2011;CurrentIdMax70A;PowerDissipationPd79W;TransistorTypePowerMOSFET;VoltageVgsMax20V

***ineonSCT: UltralowgateandoutputchargetogetherwithlowestonstateresistanceinsmallfootprintpackagesmakeOptiMOS25VthebestchoiceforthedemandingrequirementsofvoltageregulatorsolutionsinserversdatacomandtelecomapplicationsPGTO2633RoHS

***ineon: WiththenewOptiMOS30VproductfamilyInfineonsetsnewstandardsinpowerdensityandenergyefficiencyfordiscretepowerMOSFETsandsysteminpackageSummaryofFeaturesUltralowgateandoutputcharge;Lowestonstateresistanceinsmallfootprintpackages;EasytodesigninBenefitsIncreasedbatterylifetime;ImprovedEMIbehaviormakingexternalsnubbernetworksobsolete;Savingcosts;Savingspace;ReducingpowerlossesTargetApplicationsOnboardcharger;Notebook;Mainboard;DCDC;VRDVRM;Motorcontrol;LED

Market price

부분 #	제조	설명	재고	가격
IPB042N03LGATMA1 DISTI # V72:2272_06384292	Infineon Technologies AG	Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	635	500:$0.7961 250:$0.9725 100:$1.1290 25:$1.2700 10:$1.3004 1:$1.5893
IPB042N03LGATMA1 DISTI # IPB042N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 70A TO-263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	1000:$0.7426
IPB042N03LGATMA1 DISTI # IPB042N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 70A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	180In Stock	100:$1.1728 10:$1.5040 1:$1.6800
IPB042N03LGATMA1 DISTI # IPB042N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 70A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB042N03LGATMA1 DISTI # 19844711	Infineon Technologies AG	Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$0.5653
IPB042N03LGATMA1 DISTI # 26195419	Infineon Technologies AG	Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	635	11:$1.5893
IPB042N03LGXT DISTI # IPB042N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB042N03LGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.5989 6000:$0.6089 4000:$0.6309 2000:$0.6539 1000:$0.6789
IPB042N03LGATMA1 DISTI # 60R2657	Infineon Technologies AG	MOSFET, N CHANNEL, 30V, 70A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:70A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0
IPB042N03L G DISTI # 726-IPB042N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3 RoHS: Compliant	1173	1:$1.5400 10:$1.3200 100:$1.0100 500:$0.8960 1000:$0.7080 2000:$0.6280 10000:$0.6040
IPB042N03LGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 70A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	11000	1000:$0.5400 500:$0.5700 100:$0.5900 25:$0.6200 1:$0.6600
IPB042N03LGATMA1 DISTI # 8269462P	Infineon Technologies AG	MOSFET N-CH 70A 30V OPTIMOS3 TO263, RL	300	1000:£0.5180 500:£0.6030 250:£0.6280 50:£0.7160
IPB042N03LGATMA1 DISTI # IPB042N03LGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,70A,79W,PG-TO263-3	550	100:$0.3493 10:$0.3730 3:$0.4633 1:$0.5400
IPB042N03LGATMA1 DISTI # 1775533	Infineon Technologies AG	MOSFET, N CH, 70A, 30V, PG-TO263-3	552	500:£0.6150 250:£0.6540 100:£0.6940 25:£0.9000 5:£0.9900
IPB042N03LGATMA1 DISTI # 1775533	Infineon Technologies AG	MOSFET, N CH, 70A, 30V, PG-TO263-3 RoHS: Compliant	556	2000:$0.9460 1000:$1.0700 500:$1.3500 100:$1.5200 10:$1.9900 1:$2.3200

영상	부분 #	설명
	Mfr.#: IPB042N03L G OMO.#: OMO-IPB042N03L-G	MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3
	Mfr.#: IPB042N03LGATMA1 OMO.#: OMO-IPB042N03LGATMA1	MOSFET LV POWER MOS
	Mfr.#: IPB042N03LG OMO.#: OMO-IPB042N03LG-1190	신규 및 오리지널
	Mfr.#: IPB042N03LGATMA1 OMO.#: OMO-IPB042N03LGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 70A TO-263-3

IPB042N03LGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes